• Proceeding of EDISON Challenge
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• 2013.04a
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• pp.214-216
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• 2013

The atomic and electronic properties of molybdenum disurfide ($MoS_2$) nanostructures are investigated through density functional theory (DFT) calculations. We find that the band gap is indirect (about 1.79 eV) and direct (about 1.84 eV) in GGA for 2-dimensional $MoS_2$ in our calculations. On the other hand, 1-dimensional armchair nanoribbons have semiconductor properties (band gap is about 0.11~0.28 eV), while 1-dimensional zigzag nanoribbons are metallic.

• Electrical & Electronic Materials
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• v.10 no.7
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• pp.692-699
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• 1997

The silicon doped $Al_{0.33}$G $a_{0.67}$As were grown by molecular beam epitaxy. The electroreflectance(ER) spectra of Schottky barrier Au/n-Al/suu x/G $a_{1-x}$ As have been measured at various modulation voltage( $V_{ac}$ ) and dc bias voltage( $V_{bias}$). From the observed Franz-Keldysh oscillations(FKO) peak, the band gap energy of the $Al_{x}$G $a_{1-x}$ As is 1.91 eV which corresponds to an Al composition of 33%. The internal electric field( $E_{i}$)of this sample is 2.96$\times$10$^{5}$ V/cm. As the modulation voltage( $V_{ac}$ ) is changed, the line shape of ER signal does not change but its amplitude varies linearly. The amplitude as a function of modulation voltage has saturated at 0.8 V. The internal electric field has decreased from 6.47$\times$10$^{5}$ V/cm to 2.00$\times$10$^{5}$ V/cm as the dc bias voltage( $V_{bias}$) increases from -3.5 V to +0.8 V. The values of built-in voltage( $V_{bi}$ ) and carrier concentration(N) determined from the plot of $V_{bias}$ from the plot of $V_{bias}$ versus $E_{i}$$^{2}$ are 0.855 V and 3.83$\times$10$^{17}$ c $m^{-3}$ , respectively.ively.y.y.y.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.123-124
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• 2007

A silver indium sulfide ($AgInS_2$) epilayer was grown by the hot wall epitaxy method, which has not been reported in the liteniture. The grown $AgInS_2$ epilayer has found to be a chalcopyrite structure and evaluated to be high quality crystal. From the photocurrent measurement in the temperature range from 30 K to 300 K, the two peaks of A and B were only observed, whereas the three peaks of A, B, and C were seen in the PC spectrum of 10 K. These peaks are ascribed to the band-to-band transition. The valence band splitting of $AgInS_2$ was investigated by means of the photocurrent measurement. The temperature dependence of the energy band gap of the $AgInS_2$ obtained from the photocurrent spectrum was well described by the Varshni's relation, $E_g(T)=\;E_g(0)\;eV-(7.78\;{\times}\;10^{-4}\;eV/K)T^2/(T\;+\;116\;K\;K)$. Also, Eg(0) is the energy band gap at 0 K, which is estimated to be 2.036 eV at the valence band state A and 2.186 eV at the valence band state B.

• Journal of the Korean Vacuum Society
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• v.15 no.5
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• pp.527-533
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• 2006

Spinel $LiNi_xMn_{2-x}O_4$ thin films were synthesized up to x = 0.9 by a sol-gel method employing spin-coating. The Ni-substituted films were found to maintain cubic structure at low x but to exhibit tetragonal structure for $x{\geq}0.6$. Such cubic-tetragonal phase transition indicates that $Ni^{3+}(d7)$ ions with low-spin $(t_{2g}^6,e_g^1)$ state occupy the octahedral sites of the compound, thus being subject to the Jahn-Teller distortion. By x-ray photoelectron spectroscopy both $Ni^{2+}$ and $Ni^{3+}$ ions were detected. Optical properties of the $LiNi_xMn_{2-x}O_4$ films were investigated by spectroscopic ellipsometry (SE) in the visible?ultraviolet range. The measured dielectric function spectra by SE mainly consist of broad absorption structures attributed to charge-transfer (CT) transitions, $O^{2-}(2p){\rightarrow}Mn^{4+}(3d)$ for 1.9 $(t_{2g})$ and $2.8{\sim}3.0$ eV $(e_g)$ structures and $O^{2-}(2p){\rightarrow}Mn^{3+}(3d)$ for 2.3 $(t_{2g})$ and $3.4{\sim}3.6$ eV $(e_g)$ structures. Also, sharp absorption structures were observed at about 1.6, 1.7, and 1.9 eV, interpreted as due to d-d crystal-field transitions within the octahedral $Mn^{3+}$ ion. The strengths of these absorption structures are reduced by the Ni substitution. Rapid reduction of the CT transition strength involving the eg states for x = 0.6 is attributed to the reduced wavefunction overlap between the $e_g$ and the $O^{2-}(2p)$ states due to the tetragonal extension of the lattice constant by the Jahn-Teller effect.

• Journal of Adhesion and Interface
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• v.4 no.2
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• pp.30-36
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• 2003

• Honam Mathematical Journal
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• v.34 no.3
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• pp.403-408
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• 2012

In this paper, we prove that if K is a convex body in $E^n$ and $E_i$ and $E_o$ are inscribed ellipsoid and circumscribed ellipsoid of K respectively with ${\alpha}E_i=E_o$, then $\[({\alpha})^{\frac{n}{p}+1}\]^n{\omega}^2_n{\geq}V(K)V({\Gamma}^{\ast}_pK){\geq}\[(\frac{1}{\alpha})^{\frac{n}{p}+1}\]^n{\omega}^2_n$. Lutwak and Zhang[6] proved that if K is a convex body, ${\omega}^2_n=V(K)V({\Gamma}_pK)$ if and only if K is an ellipsoid. Our inequality provides very elementary proof for their result and this in turn gives a lower bound of the volume product for the sets of constant width.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.04b
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• pp.56-59
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• 2004

The stochiometric composition of $AgGaS_2$ polycrystal source materials for the $AgGaS_2/GaAs$ epilayer was prepared from horizontal furnace. From the extrapolation method of X-ray diffraction patterns it was found that the polycrystal $AgGaS_2$ has tetragonal structure of which lattice constant $a_0$ and $c_0$ were 5.756 ${\AA}$ and 10.305 ${\AA}$, respectively. $AgGaS_2/GaAs$ epilayer was deposited on throughly etched GaAs (100) substrate from mixed crystal $AgGaS_2$ by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $590^{\circ}C$ and $440^{\circ}C$ respectively. The crystallinity of the grown $AgGaS_2/GaAs$ epilayer was investigated by the DCRC (double crystal X-ray diffraction rocking curve). The optical energy gaps were found to be 2.61 eV for $AgGaS_2/GaAs$ epilayer at room temperature. The temperature dependence of the photocurrent peak energy is well explained by the Varshni equation, then the constants in the Varshni equation are given by ${\alpha}=8.695{\times}10^{-4}eV/K$, and $\beta$=332 K. From the photocurrent spectra by illumination of polarized light of the $AgGaS_2/GaAs$ epilayer, we have found that crystal field splitting $\Delta$ Cr was 0.28 eV at 20 K. From the PL spectra at 20 K, the peaks corresponding to free and bound excitons and a broad emission band due to D-A pairs are identified. The binding energy of the free excitons are determined to be 0.2676 eV and 0.2430 eV and the dissociation energy of the bound excitons to be 0.4695 eV.

• Bulletin of the Korean Chemical Society
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• v.18 no.9
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• pp.916-922
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• 1997

A superconducting phase La2CuO4+δ (Tc=44 K) has been prepared by electrochemical oxidation which allows the oxygen to intercalat into the La2O2 layers. According to the Cu K-edge X-ray absorption near edge structure spectroscopic analysis, the oxidized phase shows an overall spectra shift of about 0.5 eV to a higher energy region compared to the as sintered one with the occurrence of an additional peak corresponding to the transition to the |1s13dn+1L-14pσ1 > final state, indicating the oxidation of CuO2 layer. From the X-ray photoelectron spectroscopic studies, it is found that the binding energy of La 3d5/2 is significantly shifted from 834.3 eV (as sintered La2CuO4) to 833.6 eV (as electrochemically oxidized La2CuO4+δ), implying that the covalency of the (La-O) bond is decreased due to the oxygen intercalation. The O 1s spectra do not provide an evidence of the superoxide or peroxide, but the oxide (O2-) with the contaminated carbonate (CO32-) based on the peaks at 529 eV and 532 eV, respectively, which is clearly confirmed by the Auger spectroscopic analysis. Oxygen contents determined by iodometric titration (δ=0.07) and thermogravimetry (δ=0.09) show good coincidence each other, also giving an evidence for the "O2-" nature of excess oxygen. From the above results, it is concluded that "O2-" appeared as O 1s peak at 528.6 eV is responsible for superconductivity of La2CuO4+δ.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.14 no.11
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• pp.2541-2547
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• 2010

In this paper, we propose a design technique which replaces logic transistors of 1.2V with medium-voltage transistors of 3.3V having small off-leakage current in repetitive block circuits where speed is not an issue, to implement a low-power eFuse OTP memory IP in the stand-by state. In addition, we use dual-port eFuse cells reducing operational current dissipation by reducing capacitances parasitic to RWL (Read word-line) and BL (Bit-line) in the read mode. Furthermore, we propose an equivalent circuit for simulating program power injected to an eFuse from a program voltage. The layout size of the designed 512-bit eFuse OTP memory IP with a 90nm CMOS image sensor process is $342{\mu}m{\times}236{\mu}m$. It is confirmed by measurement experiments on 42 samples with a program voltage of 5V that we get a good result having 97.6 percent of program yield. Also, the minimal operational supply voltage is measured well to be 0.9V.

• Journal of the Korea institute for structural maintenance and inspection
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• v.10 no.2
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• pp.59-67
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• 2006

The aim of this study is to evaluate the design table for envelope curve analysis of base isolated buildings, which represent the period of base isolated buildings and the lateral displacement of base isolation devices. For the construction of design table, $V_E$ spectrum, which represents the energy, is developed instead of acceleration of seismic hazard. Based on the seismic coefficient of UBC 97, boundary period $T_G$ and maximum velocity response $V_0$ are proposed considering Korea seismic hazard. Using $T_G$ and $V_0$, finally, $V_E$ spectrum is developed for the four types of soil conditions. Base on the $V_E$ spectrum, design table for envelope curve analysis is also developed for soil types.