• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.236-236
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• 2009

This paper describes the fabrication and characteristics of Schottky micro hydrogen sensors for high temperatures by using polycrystalline(poly) 3C - SiC thin film grown on Si substrates with thermal oxide layer using APCVD. Pd/poiy 3C-SiC Schottky diodes were made and evaluated by I-V and C-V measurements. Electric current density and barrier height voltage were $2\times10^{-3}\;A/cm^2$ and 0.58 eV, respectively. These devices could operate stably at about $400^{\circ}C$. According to $H_2$ concentrations, their barrier height($\Phi_{Bn}$) were changed 0.587 eV, 0.579 eV, 0.572 eV and 0.569 eV, respectively. the current was increased. Characteristics of implemented sensors have been investigated in terms of sensitivity, linearity of response, response rate and response time. Therefore, from these results, Pd/poly 3C-SiC Schottky devices have very high potential for high temperature chemical sensor applications.

• Transactions on Electrical and Electronic Materials
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• 제17권1호
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• pp.25-28
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• 2016

We investigate the effect of interface states on the endurance of a charge trap flash (CTF) NOR array using charge pumping methods. The endurance test was completed from one cell selected randomly from 128 bit cells, where the memory window value after 10² program/erase (P/E) cycles decreased slightly from 2.2 V to 1.7 V. However, the memory window closure abruptly accelerated after 10³ P/E cycles or more (i.e. 0.97 V or 0.7 V) due to a degraded programming speed. On the other hand, the interface trap density (Nit) gradually increased from 3.13×10¹¹ cm⁻² for the initial state to 4×10¹² cm⁻² for 10² P/E cycles. Over 10³ P/E cycles, the Nit increased dramatically from 5.51×10¹² cm⁻² for 10³ P/E cycles to 5.79×10¹² cm⁻² for 10⁴ P/E cycles due to tunnel oxide damages. These results show good correlation between the interface traps and endurance degradation of CTF devices in actual flash cell arrays.

• Journal of the Korean Chemical Society
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• 제30권1호
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• pp.19-26
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• 1986

A titanium oxide thin films were prepared by air oxidation and vapour oxidation and a $TiO_2$ single crystal was reduced by heating in an argon atmosphere. All the electrode characteristics of the Ti$O_{2-x}$, thin films are not different from those of slightly reduced single crystal rutile. In cyclic voltammogram of oxygen containing electrolyte solution at Ti$O_{2-x}$ electrodes, cathodic peaks were observed at between -0.8V and -1.0V vs. SCE. The cathodic current near 0V vs. SCE in saturated solution with nitrogen was observed to be greater than in saturated solution with air. The chronoamperogram was represented by the equation of i = $i_0e^{-kt}$, when the rate constant k was represented by the equation of k =$k_0{[H^+]}^nexp(A{\eta}+E_a/RT)$ The values of activation energy $E_a $were found to be 4.6~4.8kcal/mole in overpotential range of 0.035∼0.145 V and 1.6kcal/mole in overpotential range of 0.2∼0.5V. The values of n and A were found to be 0. 1 and 5.4~5.6/V in range of 0.035~0.145V, and in range of 0.2~0.5V, to be 0.04 and 1.3/V, respectively. This can be interpreted as an totally irreversible reduction of oxygen.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• 제8권2호
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• pp.107-115
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• 2015

In this paper, a small-area 32-bit differential paired eFuse OTP memory for power ICs is designed. In case of smaller number of rows than that of columns for the OTP memory cell array, a scheme for the cell array reducing the number of SL driver circuits requiring their larger layout areas by routing the SL (source line) lines supplying programming currents for eFuse links in the row direction instead of the column direction as well as a core circuit is proposed. In addition, to solve a failure of being blown for non-blown eFuse links by the electro-migration phenomenon, a regulated voltage of V2V ($=2V{\pm}0.2V$) is used to a RWL (read word line) driver circuit and a BL (bit line) pull-up driver circuit. The layout size of the designed 32-bit eFuse OTP memory is $228.525{\mu}m{\times}105.435{\mu}m$, which is confirmed to be 20.7% smaller than that of the counterpart using the conventional cell array routing, namely $197.485{\mu}m{\times}153.715{\mu}m$.

• The Journal of Korean Institute of Communications and Information Sciences
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• 제7권2호
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• pp.59-65
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• 1982

In this paper, the CdS single crystal, which was grown as piper-polish method, was Ion-bombarded with Sb and In, and the thermally stimulated current of the spot that was Ionbombarded was measured. In the sample which was individually bombarded by Sb and In, the over-lapping peak was found, this over lapping peak was separated, by the method of thermal cleaning, showing the trap levels of 0.25(eV) and 0.31(eV) at the temperature of 147(K) and 181(K). While the spot is being cooled down and excited with photolight at the same time, the trap level 0.25(eV) disappeared and the new trap level of 0.85(eV) appeared. It can be said that the better photo-conductive crystals, the T.S.C is better measured.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 한국표면공학회 2012년도 추계총회 및 학술대회 논문집
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• pp.131-133
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• 2012

The photoluminescence (PT) properties of Al-doped ZnO thin films grown by the sol-gel dip-coating method have been investigated. At 12 K, nine distinct PL peaks were observed at 2.037, 2.592, 2.832, 3.027, 3.177, 3.216, 3.260, 3.303, and 3.354 eV. The deep-level emissions (2.037, 2.592, 2.832, and 3.027 eV) were attributed to native defects. The near-band-edge (NBE) emission peaks at 3.354, 3.303, 3.260, 3.216, and 3.177 eV were attributed to the emission of the neutral-donor-bound excitons (D0X), two-electron satellite (TES), free-to-neutral-acceptors (e,A0), donor-acceptor pairs (DAP), and second-order longitudinal optical (2LO) phonon replicas of the TES (TES-2LO), respectively. According to Haynes' empirical rule, we calculated the energy of a free exciton (FX) to be 3.374 eV. The thermal activation energy for D0X in the nanocrystalline ZnO thin film was found to be ~25 meV, corresponding to the thermal dissociation energy required for D0X transitions.

• Journal of the Korean Crystal Growth and Crystal Technology
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• 제17권5호
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• pp.179-186
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• 2007

Single crystal $CdGa_2Se_4$ layers were grown on a thoroughly etched semi-insulating GaAs(100) substrate at $420^{\circ}C$ with the hot wall epitaxy(HWE) system by evaporating the polycrystal source of $CdGa_2Se_4$ at $630^{\circ}C$. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction(DCXD). The carrier density and mobility of single crystal $CdGa_2Se_4$ thin films measured with Hall effect by van der Pauw method are $8.27{\times}10^{17}cm^{-3},\;345cm^2/V{\cdot}s$ at 293 K, respectively. The photocurrent and the absorption spectra of $CdGa_2Se_4/SI$(Semi-Insulated) GaAs(100) are measured ranging from 293 K to 10 K. The temperature dependence of the energy band gap of the $CdGa_2Se_4$ obtained from the absorption spectra was well described by the Varshni's relation $E_g(T)=2.6400eV-(7.721{\times}10^{-4}eV/K)T^2/(T+399K)$. Using the photocurrent spectra and the Hopfield quasicubic model, the crystal field energy(${\Delta}cr$) and the spin-orbit splitting energy(${\Delta}so$) far the valence band of the $CdGa_2Se_4$ have been estimated to be 106.5 meV and 418.9 meV at 10 K, respectively. The three photocurrent peaks observed at 10 K are ascribed to the $A_{1^-},\;B_{1^-},\;and\;C_{11}-exciton$ peaks.

• Proceedings of the Korean Vacuum Society Conference
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.245-245
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• 2012

차세대 디스플레이로 각광받고 있는 AMOLED에 대한 관심이 높아짐에 따라 구동 소자의 연구가 활발히 이루어지고 있다. 산화물 반도체 박막 트랜지스터는 비정질 실리콘 박막 트랜지스터에 비해 100 $cm^2$/Vs 이하의 높은 이동도와 우수한 전기적 특성으로 AMOLED 구동 소자로서 학계에서 입증되어왔고, 현재 여러 기업에서 산화물 반도체를 이용한 박막 트랜지스터 제작 연구가 활발히 이루어지고 있다. 본 연구는 열처리 조건을 가변하여 제작한 산화물 반도체 박막 트랜지스터의 전기적 특성 분석을 목적으로 한다. 실리콘 기판에 oxidation 공정을 이용하여 SiO2 100 nm, DC스퍼터링을 이용하여 ITZO (Indium-Tin-Zinc Oxide) 산화물 반도체 박막 50 nm, 증착된 산화물 반도체 박막의 열처리 후, evaporation을 이용하여 source/drain 전극 Ag 150 nm 증착하여 박막 트랜지스터를 제작하였다. 12 sccm의 산소유량, 1시간의 열처리 시간에서 열처리 온도 $400^{\circ}C$, $200^{\circ}C$의 샘플은 각각 이동도 $29.52cm^2/V{\cdot}s$, $16.15cm^2/V{\cdot}s$, 문턱전압 2.61 V, 6.14 V, $S{\cdot}S$ 0.37 V/decade, 0.85 V/decade, on-off ratio 5.21 E+07, 1.10 E+07이었다. 30 sccm의 산소유량, 열처리 온도 $200^{\circ}C$에서 열처리 시간 1시간, 1시간 30분 샘플은 각각 이동도 $12.27cm^2/V{\cdot}s$, $10.15cm^2/V{\cdot}s$, 문턱전압 8.07 V, 4.21 V, $S{\cdot}S$ 0.89 V/decade, 0.71 V/decade, on-off ratio 4.31 E+06, 1.05 E+07이었다. 산화물 반도체의 열처리 효과 분석을 통하여 높은 열처리 온도, 적은 산소의 유량, 열처리 시간이 길수록 이동도, 문턱전압, $S{\cdot}S$의 산화물 박막 트랜지스터 소자의 전기적 특성이 개선되었다.

• Bulletin of the Korean Mathematical Society
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• 제22권2호
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• pp.121-126
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• 1985

D.K. Harrison [5] has shown that if R and S are fields of characteristic different from 2, then two Witt rings W(R) and W(S) are isomorphic if and only if W(R)/I(R)$^{3}$ and W(S)/I(S)$^{3}$ are isomorphic where I(R) and I(S) denote the fundamental ideals of W(R) and W(S) respectively. In [1], J.K. Arason and A. Pfister proved a corresponding result when the characteristics of R and S are 2, and, in [9], K.I. Mandelberg proved the result when R and S are commutative semi-local rings having 2 a unit. In this paper, we prove the result when R and S are 2-fold full rings. Throughout this paper, unless otherwise specified, we assume that R is a commutative ring having 2 a unit. A quadratic space (V, B, .phi.) over R is a finitely generated projective R-module V with a symmetric bilinear mapping B: V*V.rarw.R which is nondegenerate (i.e., the natural mapping V.rarw.Ho $m_{R}$ (V, R) induced by B is an isomorphism), and with a quadratic mapping .phi.:V.rarw.R such that B(x,y)=(.phi.(x+y)-.phi.(x)-.phi.(y))/2 and .phi.(rx)= $r^{2}$.phi.(x) for all x, y in V and r in R. We denote the group of multiplicative units of R by U(R). If (V, B, .phi.) is a free rank n quadratic space over R with an orthogonal basis { $x_{1}$, .., $x_{n}$}, we will write < $a_{1}$,.., $a_{n}$> for (V, B, .phi.) where the $a_{i}$=.phi.( $x_{i}$) are in U(R), and denote the space by the table [ $a_{ij}$ ] where $a_{ij}$ =B( $x_{i}$, $x_{j}$). In the case n=2 and B( $x_{1}$, $x_{2}$)=1/2, we reserve the notation [ $a_{11}$, $a_{22}$] for the space.the space.e.e.e.

• Phonetics and Speech Sciences
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• 제2권3호
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• pp.23-27
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• 2010

The purpose of this study was to find how English vowels /a, e, i, o, u/ affect the production of English labials /p, b, f, v/ by Korean learners of English. Sixty syllables were composed by five vowels and four labials in the syllable types CV, VC, and VCV. The nonsense syllables were produced three times by nine subjects. The major results show that (1) in inter-vocalic position, the subjects had higher scores in producing /v/ composed with /a, e, o/ and /u/, while subjects had lower scores in producing /p/ with /i/ and /o/, (2) in post-vocalic position, the subjects had higher scores in producing /v/ and /f/ with /a, e/, and /o/, while subjects had lower scores in producing /b/ with /e/ and /i/, and (3) in pre-vocalic position, the subjects had higher scores in producing /v/ with /e, o, u/ and /f/ with /u/, while subjects had lower scores in producing /b/ with /e/, /i/ and /u/. The results suggest that on the whole, Korean learners of English have much difficulty in producing /p/ with /i/ in inter-vocalic condition and /b/ with /i, /e/ in pre-vocalic position.