A Study on the Thermally Stimulated Current in CdS Single Crystal

CdS단결정의 열랄격전류에 관한 연구

In this paper, the CdS single crystal, which was grown as piper-polish method, was Ion-bombarded with Sb and In, and the thermally stimulated current of the spot that was Ionbombarded was measured. In the sample which was individually bombarded by Sb and In, the over-lapping peak was found, this over lapping peak was separated, by the method of thermal cleaning, showing the trap levels of 0.25(eV) and 0.31(eV) at the temperature of 147(K) and 181(K). While the spot is being cooled down and excited with photolight at the same time, the trap level 0.25(eV) disappeared and the new trap level of 0.85(eV) appeared. It can be said that the better photo-conductive crystals, the T.S.C is better measured.

本實驗에 파이퍼-폴리시(piper-polish)法으로 만든 單結晶에 Sb와 In을 이온衝激시킨 스포트에 대하여 熱剌激電流를 測定하였다. Sb와 In을 각각 衝激시켜 熱剌激電流를 測定한 결과 중첩된 피이크가 觀察되었는데 이를 서멀 클리닝(thermal cleaning)法으로 分離하여 147K에서 0.25eV와 0.31eV의 活性에너지를 얻었다. 스포트를 冷却시키면서 光勵起시키면 0.25eV의 트랩(trap)이 사라지고 0.85eV의 트랩이 새로 나타났다. 光電導가 양호한 結晶에서 T.S.C.가 잘 測定되었다.