• Electrical & Electronic Materials
• /
• v.9 no.9
• /
• pp.906-910
• /
• 1996

Ferroxplana N $i_{2}$Y(B $a_{2}$N $i_{2}$F $e_{12}$ $O_{22}$ ) magnetic particles, which is one of the hexagonal ferrite were synthesized by a coprecipitation method. The coprecipitates were prepared by adding aqueous solution of BaC $I_{2}$ - 2 $H_{2}$O, NiC $I_{2}$ - 6 $H_{2}$O and FeC $I_{3}$ - 6 $H_{2}$O(of which the mole ratio is $Ba^{+2}$ : N $i^{+2}$ : F $e^{3+}$= 1 : 1 : 6) to a mixture of NaOH and N $a_{2}$C $O_{3}$. The shape of Ferroxplana N $i_{2}$Y magnetic particles obtained at 1, 100(.deg. C) was hexagonal plate-like, average particle size and aspect ratio were 2(.mu.m) and 7, respectively.y.

• Journal of the Korean Society for information Management
• /
• v.6 no.1
• /
• pp.15-36
• /
• 1989

The r a p i d i n c r e a s e o f microcomputer technology has r e s u l t e d i n t h e broad a p p l i c a t i o n t o various f i e l d s . The purpose of t h l s paper 1s to design a computerized r e t r i e v a l system f o r nuclear information m a t e r i a l s using a microcomputer.

• Journal of Plant Biology
• /
• v.29 no.1
• /
• pp.53-65
• /
• 1986

The montane forests of Ulreung Island, Korea, were investigated by the ZM school method. By comparing the montane forests of this island with those of Korean Peninsula and of Japan, a new order, F a g e t a l i a m u l t i n e r v i s, a new alliance, F a l g i o n m u l t i n e r v i s, a new association, H e p a t i c o-F a g e t u m m u l t i n e r v i s and Rhododendron brachycarpum-Pinus parviflora community were recognized. The H e p a t i c o - F a g e t u m m u l t i n e r v i s was further subdivided into four subassociations; Subass. of Sasa kurilensis, Subass. of Rumohra standishii, Subass. of Rhododendron brachycarpum and Subass. of typicum. Each community was described in terms of floristic, structural and environmental features.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.23 no.5
• /
• pp.368-373
• /
• 2010

In this study, we have investigated the effects of Cr dopant on the bulk trap levels and grain boundary characteristics of $Bi_2O_3$-based ZnO (ZB) varistor using admittance spectroscopy and dielectric functions (such as $Z^*,\;Y^*,\;M^*,\;{\varepsilon}^*$, and $tan{\delta}$). Admittance spectra show more than two bulk traps of $Zn_i$ and $V_o$ probably in different ionization states in ZnO-$Bi_2O_3-Cr_2O_3$ (ZBCr) system. Three kinds of temperature-dependant activation energies ($E_{bt}'s$) were calculated as 0.11~0.14 eV of attractive coulombic center, 0.16~0.17 eV of $Zn_{\ddot{i}}$, and 0.33 eV of $V_o^{\cdot}$ as dominant bulk defects. The grain boundaries of ZBCr could be electrochemically divided into two types as a sensitive to ambient oxygen i.e. electrically active one and an oxygen-insensitive i.e. electrically inactive one. The grain boundaries were electrically single type under 460 K (equivalent circuit as parallel $R_{gb1}C_{gb1}$) but separated as double one ($R_{gb1}C_{gb1}-R_{gb2}C_{gb2}$) over 480 K. It is revealed that the dielectric functions are very useful tool to separate the overlapped bulk defect levels and to characterize the electrical properties of grain boundaries.

• Proceedings of the KIEE Conference
• /
• 1991.11a
• /
• pp.265-268
• /
• 1991

In the study, PPTMDSO(plasma-polymerized tetramethyldisiloxane) films were deposited on on glass substrate in a paralled plate reactor. As the function of RF power increased from 20 W to 110 W, and the substrate temperature increased from $25^{\circ}C$ to $100^{\circ}C$, the deposit ion rate, increased. When oxygen was intentionally added in monomer vapor, the concentration of Si-O-Si bonds increased while C-H, Si-H, -CH3, Si(CH3)x, -CH3, and Si-C bonds decreased in IR spectra. Thermal stability of PPTMSDO film were investigated and weight loss at $800^{\circ}C$ was 7.3 %.

• Journal of the Korean Magnetics Society
• /
• v.13 no.3
• /
• pp.121-126
• /
• 2003

The electromagnetic properties and microstructures of the basic composition of (N $i_{0.2}$C $u_{0.2}$Z $n_{0.6}$)$_{1.085}$(F $e_2$ $O_3$)$_{0.915}$ were invested by changing of the additive Sn $O_2$, CaO amounts and ferrite processes. There is no variation of grain size by changing additive amount. It can reduce the total loss when (N $i_{0.2}$C $u_{0.2}$Z $n_{0.6}$)$_{1.085}$(F $e_2$ $O_3$)$_{0.915}$ composition sintered at 1150 $^{\circ}C$ better than 130$0^{\circ}C$. Additive CaO confirmed of useful addition for the reduce total loss, because it increasing sintering density. Decreasing total loss were observed by adding both Sn $O_2$ 0.06 wt％ and CaO 0.4 wt％.

• Korean Journal of Materials Research
• /
• v.5 no.5
• /
• pp.583-597
• /
• 1995

We investigated the effect of the oxygne partial pressure on the phase stability of B $i_{2}$S $r_{2}$Ca C $u_{2}$ $O_{8+x}$ and B $i_{2}$S $r_{2}$C $a_{2}$C $u_{3}$ $O_{10+x}$ at 82$0^{\circ}C$. As the oxygen pressure decreased, B $i_{2}$Sr/sb 2/CaC $u_{2}$ $O_{8+x}$ melted at 2.2$\times$10$^{-3}$ atm $O_{2}$. In the case of the B $i_{1.7}$P $b_{0.4}$S $r_{2}$C $a_{2}$ $O_{10+x}$, it started to decompose into theree phases of B $i_{2}$S $r_{2}$Cu $O_{6+y}$, $Ca_{2}$Cu $O_{3}$ and C $u_{4}$ $O_{3}$ and C $u_{4}$ $O_{3}$ at 8.0$\times$10$^{-3}$ atm $O_{2}$ and was completely decomposed at 4.3$\times$10$^{-3}$ atm $O_{2}$ B $i_{2}$S $r_{2}$C $a_{2}$C $u_{3}$ $O_{10+x}$ phase was not formed by the solid state reaction from the mixutre of $i_{2}$S $r_{2}$CaCu.sub 2/ $O_{8+x}$, $Ca_{2}$Cu $O_{3}$ and CuO down to 2.2$\times$10.sub -3/ atm O.sub 2/ but formed by the solidifciation of the formed from the mixture of the intermediate compounds in the Bi-Sr-Ca-Cu-O system and the fromation temperature of Bi.sub 2/S $r_{2}$C $a_{2}$Cu.$_{3}$ $O_{10+x}$ can be lowered by reducing oxygen partial pressure.e.e.ure.e.e.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.07a
• /
• pp.45-49
• /
• 2001

We have investigated physical and electrical properties of the Hf $O_2$/HfS $i_{x}$/ $O_{y}$ thin film for alternative gate dielectrics in the metal-oxide-semiconductor device. The oxidation of Hf deposited directly on the Si substrate results in the H $f_{x}$/ $O_{y}$ interfacial layer and the high-k Hf $O_2$film simultaneously. Interestingly, the post-oxidation N2 annealing of the H102/H1Si70y thin films reduces(increases) the thickness of an amorphous HfS $i_{x}$/ $O_{y}$ layer(Hf $O_2$ layer). This phenomenon causes the increase of the effective dielectric constant, while maintaining the excellent interfacial properties. The hysteresis window in C-V curves and the midgap interface state density( $D_{itm}$) of Hf $O_2$/HfS $i_{x}$/ $O_{y}$ thin films less than 10 mV and ~3$\times$10$^{11}$ c $m^{-2}$ -eV without post-metallization annealing, respectively. The leakage current was also low (1$\times$10-s A/c $m^2$ at $V_{g}$ = +2 V). It is believed that these excellent results were obtained due to existence of the amorphous HfS $i_{x}$/ $O_{y}$ buffer layer. We also investigated the charge trapping characteristics using Fowler-Nordheim electron injection: We found that the degradation of Hf $O_2$/HfS $i_{x}$/ $O_{y}$ gate oxides is more severe when electrons were injected from the gate electrode.e electrode.e.e electrode.e.

• Journal of the Korean association of regional geographers
• /
• v.18 no.3
• /
• pp.336-350
• /
• 2012

Cette $\acute{e}$tude a pour objectif d'analyser et d'expliquer le g$\acute{e}$osite de l'$\hat{I}$le de Geum-o pour connaitre les caract$\acute{e}$ristiques de cette r$\acute{e}$gion du point de vue $\acute{e}$cologique, historique et culturel $\grave{a}$ partir de ses ressources g$\acute{e}$omorphiques et g$\acute{e}$ologiques. Il y a plusieurs ressources g$\acute{e}$otouristiques sur $\hat{I}$le de Geum - o: la falaise de 'Miyeokneolbang' et 'Shinseondae'; la plage de Gigpo; la falaise et la caverne marine de 'Gualbaramtong'; le tombolo et l'$\hat{I}$le reli$\acute{e}$e $\grave{a}$ la terre de Choungsan; la coul$\acute{e}$e de roches de Jangji; la plage de cailloux de Jangji; le lieu des tuf et des andesite de la c$\hat{o}$te orientale. On a g$\acute{e}$n$\acute{e}$ralement d$\acute{e}$velopp$\acute{e}$ la couche s$\acute{e}$dimentaire et les roches volcaniques li$\acute{e}$es $\grave{a}$ la derni$\grave{e}$re p$\acute{e}$riode du m$\acute{e}$sozo$\ddot{i}$que. Une route g$\acute{e}$otouristique part de l'embarcad$\grave{e}$re de Hamgoumi sur l'$\hat{I}$le de Geum-o et continue du Nord-Ouest jusqu'au Sud-Est l'autre route part de la c$\hat{o}$te Est et continue en suivant la c$\hat{o}$te orientale. Nous proposons des panneaux d'explication g$\acute{e}$otouristique de Janji centr$\acute{e}$s sur la coul$\acute{e}$e de roches.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.15 no.7
• /
• pp.730-735
• /
• 2004

This paper describes what brings about DC offset and the impact or the DC offset on the performance or direct-conversion mobile receiver in WCDMA system. The performance degradation of $E_{b}/N_{o}$ due to the DC offset is presented through simulation result. Direct-conversion RF Transceiver which has the function of DC offset control is implemented and then applied to the WCDMA test-bed for the performance evaluation. The receiver performance degradation of $E_{c}/I_{o}$ is evaluated and analyzed by varying DC offset value. The practical test showed the minimum requirement of DC offset value to meet system performance.