• Korean Chemical Engineering Research
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• 제48권1호
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• pp.33-38
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• 2010

구리 이온 농도를 측정하기 위하여 생체재료를 사용하여 마이크로플루이딕 시스템을 제작하였다. 은 전극에 세포막을 모방한 이중층 지질막(bilayer lipid membrane; BLM)을 피복하여 제2 구리 이온 농도를 감지하도록 하였다. 은 전극에 지지된 BLM은 그 안정성이 증대되었다. 은에 지지된 이중층 지질막(s-BLM)은 은 전선을 지질 (phosphatidylcholine; PC) 용액에 담갔다가 KCl 용액에 담글 때 자기조립 특성에 의하여 용이하게 형성할 수 있다. 이 지지된 이중층 지질막(s-BLM)은 $Cu^{2+}$의 농도와 s-BLM을 통과하는 전류 간의 상관 관계를 결정하기 위하여 사용되었다. 얻어진 상관관계는 선형을 보였으며 높은 재현성을 가졌다. $Cu^{2+}$ 농도가 $10{\sim}130{\mu}M$인 범위에서 $Cu^{2+}$ 농도와 전류의 상관관계를 나타내기 위하여 보정 곡선을 구축하였다. 이 보정 곡선을 미지 시료의 $Cu^{2+}$ 농도 측정에 사용하였다. 지지된 이중층 지질막이 구비된 마이크로플루이딕 시스템은 PDMS(polydimethyl siloxane)를 사용하여 전형적인 연질 포토리소그라피와 몰딩 기법으로 제작하였다. 집적된 마이크로플루이딕 시스템은 은 전선을 절단하지 않고도 은 표면을 활성화시키는 기능, 은 표면에 이중층 지질막을 피복하는 기능, KCl 완충 용액을 주입하는 기능, $Cu^{2+}$를 포함한 시료를 주입하는 기능, 시료 중의 $Cu^{2+}$ 농도를 측정하는 기능 등 다중 기능을 가지도록 하였다.

• 한국표면공학회지
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• 제53권1호
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• pp.9-14
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• 2020

CuS (copper sulfide) thin films having the same thickness of 100nm were deposited on the glass substrates using by radio frequency (RF) magnetron sputtering method. RF powers were applied as a process variable for the growth of CuS thin films. The structural and optical properties of CuS thin films deposited under different power conditions (40-100W) were studied. XRD analysis revealed that all CuS thin films had hexagonal crystal structure with the preferential growth of (110) planes. As the sputtering power increased, the relative intensity of the peak with respect to the (110) planes decreased. The peaks of the two bands (264cm^-1 and 474cm^-1) indicated in the Raman spectrum exactly matched the typical spectral values of the covellite (CuS). The size and shape of the grains constituting the surface of the CuS thin films deposited under the power condition ranging from 40W to 80W hardly changed. However, the spacing between crystal grains tended to increase in proportion to the increase in sputtering power. The maximum transmittance of CuS thin films grown at 40W to 80W ranged from 50 % to 51 % based on 580nm wavelength, and showed a relatively small decrease of 48% at 100W. The band gap energy of the CuS thin films decreased from 2.62eV (at 40W) to 2.56eV (at 100W) as the sputtering power increased.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2002년도 하계학술대회 논문집 C
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• pp.1584-1586
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• 2002

CuIn$Se_2$ (CIS) and related compounds such as Cu($In_xGa_{1-x})Se_2$(CIGS) have been studied by their potential for use in photovoltaic devices. CIS thin film materials which have high absorption coefficient and wide bandgap, have attracted much attention as an alternative to crystalline and amorphous silicon solar cells currently in use. Cu-rich CIGS film have very low resistivity, due to coexistence of the semimetallic $Cu_{2-x}Se$. In-rich CIGS films show high resistivity, since these films are compensated films without the $Cu_{2-x}Se$ phase. Optical properties of the CIGS films also change in accordance with the resistivity for the Cu/(In+Ga) ratio. The Cu-rich films have different spectra from In-rich films in near infrared wavelengths.

• 한국자기공명학회논문지
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• 제8권2호
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• pp.86-95
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• 2004

A Cu(I) complex with an asymmetric TTF derivative (CET-EDTTTF) is prepared from the slow-diffusion method using CET-EDTTTF and Cu(I)Br solutions and characterized by X-ray crystallography and EPR spectroscopy. Structural analysis shows Cu(I) ions are tetrahedrally coordinated to two bridging bromides, one terminal bromide, and one S atom from CET-EDTTTF. Detailed geometrical and EPR analysis identified that the dimmer molecule contains [Cu$_2Br_4]^{2-}$ anion between two [CET-EDTTTF]$^+$ radical cations. Single-crystal EPR investigation of the complex reveals that the ganisotropy is unusually big, compared to those of the previously reported TTF+ cation radicals, implying that there is significant contribution of the Cu d-orbital to the HOMO of the complex.

• 마이크로전자및패키징학회지
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• 제14권4호
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• pp.63-69
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• 2007

Cu 비아를 이용한 MEMS 센서의 스택 패키지용 interconnection 공정을 연구하였다. Ag 페이스트 막을 유리기판에 형성하고 관통 비아 홀이 형성된 Si 기판을 접착시켜 Ag 페이스트 막을 Cu 비아 형성용 전기도금 씨앗층으로 사용하였다. Ag 전기도금 씨앗층에 직류전류 모드로 $20mA/cm^2$와 $30mA/cm^2$의 전류밀도를 인가하여 Cu 비아 filling을 함으로써 직경 $200{\mu}m$, 깊이 $350{\mu}m$인 도금결함이 없는 Cu 비아를 형성하는 것이 가능하였다. Cu 비아가 형성된 Si 기판에 Ti/Cu/Ti metallization 및 배선라인 형성공정, Au 패드 도금공정, Sn 솔더범프 전기도금 및 리플로우 공정을 순차적으로 진행함으로써 Cu 비아를 이용한 MEMS 센서의 스택 패키지용 interconnection 공정을 이룰 수 있었다.

• 대한화학회지
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• 제38권9호
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• pp.632-639
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• 1994

가시부 영역에서 산화아연을 광증감시키기 위해 copper phthalocyanine(CuPc)과 sunfast yellow(SY)를 산화아연 분말에 이층 흡착시켰다. 산화아연에 대한 CuPc의 흡착상태를 알기 위하여 ZnO/CuPc의 광음향, IR 및 라만 스펙트럼을 측정한 결과, CuPc는 $\alpha$형 및 $\beta$형의 결정 특성을 유지한 이합체 또는 분자들의 집합체 상태로 산화아연에 흡착된다는 것을 알았다. 산화아연에 CuPc 및 SY를 순차적으로 이층 흡착시킨계(ZnO/CuPc/SY)는 SY를 먼저 흡착시킨 ZnO/SY/CuPc계보다 광기전력이 높게 나타났고, $ZnO/\beta-CuPc/SY$는 $ZnO/\alpha-CuPc/SY$보다 광기전력이 높게 나타났다. $ZnO/\beta-CuPc/SY$의 전자사진 감도를 측정하였더니 630 nm에서 $$S_{1/2}=2.99{\times}10^{-2}(erg/cm^2)^{-1}$ 이었다.

• 한국마이크로전자및패키징학회:학술대회논문집
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• 한국마이크로전자및패키징학회 2000년도 Proceedings of 5th International Joint Symposium on Microeletronics and Packaging
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• pp.73-73
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• 2000

Shear strength of BGA solder joints on Cu pad was studied for Cu-contained Sn n.5 a and 2.5wt.% Cu) and Sn-Pb (o.5wt.% Cu) solders, with emphasis on the roles of the C Cu-Sn intermetallic layer thickness and the roughness of the interface between the i intermetallic layer and solder. The shear strength test was performed both for a as-soldered s이der joints with soldering reaction times of 1, 2, 4 min and for aged s이der j joints at 170 C up to 16 days. The Cu addition to both pure Sn and eutectic Sn-Pb s solders increased the intermetallic layer thickness at both soldering and aging t temperatures. The Cu addition also resulted in changes in the roughness of the interface b between the intermetallic layer and solder at as-soldered states. With increasing Cu c content. the interface roughened for Sn-Cu solders whereas it flattened for Sn-Pb-Cu s solders. The shear fractures in all solder joints investigated were confined in the bulk s solder rather than through the intermetallic layer. Therefore, the effect of Cu content in s solders on the shear strength of the solder joints was primarily attributed to its i influence on the micros$\sigma$ucture of bulk solder, such as the size and spatial distributions of CU6Sn5 precipitates. In addition, the critical intermetallic layer thickness for a m maximum shear strength seemed to depend on the Cu content in bulk solder.older.

• Nano
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• 제13권12호
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• pp.1850140.1-1850140.9
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• 2018

An electrochemical sensor ($Cu^{2+}$-IIPs/GCE) was developed for detection of $Cu^{2+}$ in water. $Cu^{2+}$-IIPs/GCE was prepared by dispersing $Cu^{2+}$ imprinted polymers ($Cu^{2+}$-IIPs) on a preprocessed glassy carbon electrode. $Cu^{2+}$-IIPs were synthesized on the surface of modified carbon spheres by ion imprinting technology. The electrochemical performance of $Cu^{2+}$-IIPs/GCE was evaluated by differential pulse voltammetry method. The response of $Cu^{2+}$-IIPs/GCE to $Cu^{2+}$ was linear in $1.0{\times}10^{-5}mol/L$ to $1.0{\times}10^{-3}mol/L$. The detection limit was $5.99{\times}10^{-6}mol/L$ (S=N = 3). The current response value of $Cu^{2+}$-IIPs/GCE was 2.14 times that of the nonimprinted electrode. These results suggest that $Cu^{2+}$-IIPs/GCE can detect the concentration of $Cu^{2+}$ in water, providing a new way for heavy metal ions adsorption and testing.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1999년도 제17회 학술발표회 논문개요집
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• pp.181-181
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• 1999

Self-assembled monolayers(SAMs) of alkanethiol have been formed on the Cu(111) surfaces in vacuum. The thermal behavior of octanethiol-based SAMs on the Cu(111) surface have been examined in ultrahigh vacuum. Using X-ray photoelectron spectroscopy (XPS), it is found that the monolayers are stable up to about 500K in vacuum. Decomposition is signaled by a decrease in the intensity of C ls peak, accompanied by an increase of the intensity of the Cu 2p peak. However, the intensity of the S 2p peak doesn't change much as a function of annealing temperature. Thermal the decomposition mass spectra show that n-alkene is the predominant species desorbing from the surface in the 500-600K temperature range. The totality of these data leads to the conclusion that the monolayers decompose through the S-C bond cleavage by hydrogen elimination reaction, resulting in the desorption of hydrocarbon moiety as n-alkene. Following this initial decomposition step, Cu2S layers are observed on the surface. For comparison, attempts were also made to examine the thermal behavior of octanethiol-based SAMs on the Cu(111) surface in air. It has been shown that the SAMs on the Cu(111) surfaces begin to desorb with the oxidation of the thiolate to sulfonate at 400K. Upon annealing to 450K, the monolayer has almost completely desorbed as indicated by the virtual disappearance of the S 2p peak.

• 한국재료학회지
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• 제25권5호
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• pp.238-246
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• 2015

$H_2S$ is a flammable toxic gas that can be produced in plants, mines, and industries and is especially fatal to human body. In this study, CuO nanowire structure with high porosity was fabricated by deposition of copper on highly porous singlewall carbon nanotube (SWCNT) template followed by oxidation. The SWCNT template was formed on alumina substrates by the arc-discharge method. The oxidation temperatures for Cu nanowires were varied from 400 to $800^{\circ}C$. The morphology and sensing properties of the CuO nanowire sensor were characterized by FESEM, Raman spectroscopy, XPS, XRD, and currentvoltage examination. The $H_2S$ gas sensing properties were carried out at different operating temperatures using dry air as the carrier gas. The CuO nanowire structure oxidized at $800^{\circ}C$ showed the highest response at the lowest operating temperature of $150^{\circ}C$. The optimum operating temperature was shifted to higher temperature to $300^{\circ}C$ as the oxidation temperature was lowered. The results were discussed based on the mechanisms of the reaction with ionosorbed oxygen and the CuS formation reaction on the surface.