• Progress in Superconductivity and Cryogenics
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• v.1 no.1
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• pp.7-14
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• 1999

Wekk oriented $Bi_{2} Sr_{2} CaCu_{2} O_{8}$ suppercondcting thick films were fabricared on copper tape by LiReac-PreCu (liquid reaction between a Cu-free precousor and Cu tape) method. Cu-free precursor power which is composed of $Bi_{2}Sr_{2}Ca_{5}$ was printed on a copper tape by screen printing and was heat-treated. The speciment were partially in a molten state at the heat treatment temperature (85$0^{\circ}C$~87$0^{\circ}C$). The heat heat treatments for the reaction were performed in air or low oxygen pressure in several stages. XRD analyses of the resulting Bi2Sr2CaCu2O8 superconducting tapes show that the $Bi_{2} Sr_{2} CaCu_{2} O_{8}$ phase is dominant and a small amount of $Bi_{2} Sr_{2} Cu_{2} O_{6}$ phase is detected. Both phases are aligned in the c-axis direction.

• Korean Journal of Materials Research
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• v.11 no.9
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• pp.802-809
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• 2001

Electroplating is an attractive alternative deposition method for copper with the need for a conformal and conductive seed layer In addition, the Cu seed layer should be highly pure so as not to compromise the effective resistivity of the filled copper interconnect structure. This seed layer requires low electrical resistivity, low levels of impurities, smooth interface, good adhesion to the barrier metal and low thickness concurrent with coherence for ensuring void-free fill. The electrical conductivity of the surface plays an important role in formation of initial Cu nuclei, Cu nucleation is much easier on the substrate with higher electrical conductivities. It is also known that the nucleation processes of Cu are very sensitive to surface condition. In this study, copper seed layers deposited by magnetron sputtering onto a tantalum nitride barrier layer were used for electroplating copper in the forward pulsed mode. Prior to electroplating a copper film, the Cu seed layer was cleaned by plasma H$_2$ and $N_2$. In the plasma treatment exposure tome was varied from 1 to 20 min and plasma power from 20 to 140W. Effects of plasma pretreatment to Cu seed/Tantalum nitride (TaN)/borophosphosilicate glass (BPSG) samples on electroplating of copper (Cu) films were investigated.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.154-154
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• 2003

A stoichiometric mixture of evaporating materials for CuGaSe2 single crystal thin films was prepared from horizontal electric furnace. Using extrapolation method of X-ray diffraction patterns for the polycrystal CuGaSe2, it was found tetragonal structure whose lattice constant at and co were 5.615 ${\AA}$ and 11.025 ${\AA}$, respectively. To obtain the single crystal thin films, CuGaSe2 mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (MWE) system. The source and substrate temperatures were Slot and 450$^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (UXD). The carrier density and mobility of CuGaSe2 single crystal thin films measured with Hall effect by van der Pauw method are 5.0l${\times}$10$\^$17/ cm$\^$-3/ and 245 $\textrm{cm}^2$/V$.$s at 293K, respectively. The temperature dependence of the energy band gap of the CuGaSe2 obtained from the absorption spectra was well described by the Varshni's relation, Eg(T) = 1.7998 eV - (8.7489${\times}$10$\^$-4/ eV/K)T$^2$/(T + 335 K. After the as-grown CuGaSe2 single crystal thin films was annealed in Cu-, Se-, and Ca-atmospheres, the origin of point defects of CuGaSe2 single crystal thin films has been investigated by the photoluminescence(PL) at 10 K The native defects of V$\_$CU/, V$\_$Se/, Cu$\_$int/, and Se$\_$int/ obtained by PL measurements were classified as a donors or accepters type. And we concluded that the heat-treatment in the Cu-atmosphere converted CuGaSe2 single crystal thin films to an optical n-type. Also, we confirmed that Ga in CuGaSe2/GaAs did not form the native defects because Ga in CuGaSe2 single crystal thin films existed in the form of stable bonds.

• Korean Journal of Materials Research
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• v.23 no.6
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• pp.304-308
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• 2013

The effect of a sputter deposition sequence of Cu, Zn, and Sn metal layers on the properties of $Cu_2ZnSnS_4$ (CZTS) was systematically studied for solar cell applications. The set of Cu/Sn/Zn/Cu multi metal films was deposited on a Mo/$SiO_2$/Si wafer using dc sputtering. CZTS films were prepared through a sulfurization process of the Cu/Sn/Zn/Cu metal layers at $500^{\circ}C$ in a $H_2S$ gas environment. $H_2S$ (0.1%) gas of 200 standard cubic centimeters per minute was supplied in the cold-wall sulfurization reactor. The metal film prepared by one-cycle deposition of Cu(360 nm)/Sn(400 nm)/Zn(400 nm)/Cu(440 nm) had a relatively rough surface due to a well-developed columnar structure growth. A dense and smooth metal surface was achieved for two- or three-cycle deposition of Cu/Sn/Zn/Cu, in which each metal layer thickness was decreased to 200 nm. Moreover, the three-cycle deposition sample showed the best CZTS kesterite structures after 5 hr sulfurization treatment. The two- and three-cycle Cu/Sn/Zn/Cu samples showed high-efficient photoluminescence (PL) spectra after a 3 hr sulfurization treatment, wheres the one-cycle sample yielded poor PL efficiency. The PL spectra of the three-cycle sample showed a broad peak in the range of 700-1000 nm, peaked at 870 nm (1.425 eV). This result is in good agreement with the reported bandgap energy of CZTS.

• Applied Chemistry for Engineering
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• v.29 no.6
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• pp.782-788
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• 2018

Submicron copper-silver core-shell (Cu@Ag) particles were synthesized using the sonochemical combined transmetallation reaction and the application to printed electronics as a low cost conductive paste was evaluated. $Cu_2O$ of the $Cu_2O/Cu$ composite used as a core in the reaction for the synthesis of core-shell was sonochemically reduced to Cu, and Cu atoms functioned as a reducer for silver ions in transmetallation to achieve the copper-silver core-shell structure. The characterization of submicron particles by TEM-EDS and TG-DSC confirmed the core-shell structure. Conductive pastes in which 70 wt% Cu@Ag was dispersed in solvents were prepared using a binder and wetting agents, and coated on the polyamide film using a screen-printing method. Printed paste films containing synthesized Cu@Ag particles with 8 at% and 16 at% Ag exhibited low resistivity of 96.2 and $38.4{\mu}{\Omega}cm$ after sintering at $180^{\circ}C$ in air, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.3
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• pp.232-239
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• 2013

Thin light-active layers of the $CuInSe_2$ solar cell were prepared on Mo-coated sodalime glass substrates by one-step electrodeposition and post-annealing. The structure, morphology, and composition of $CuInSe_2$ film could be controlled by deposition parameters, such as the composition of metallic precursors, the concentration of complexing agents, and the temperature of post-annealing with elemental selenium. A dense and uniform Cu-poor $CuInSe_2$ film was successfully obtained in a range of parametric variation of electrodeposition with a constant voltage of -0.5 V vs. a Ag/AgCl reference electrode. The post-annealing of the film at high temperature above $500^{\circ}C$ induced crystallization of $CuInSe_2$ with well-developed grains. The KCN-treatment of the annealed $CuInSe_2$ films further induced Cu-poor $CuInSe_2$ films without secondary phases, such as $Cu_2Se$. The structure, morphology, and composition of $CuInSe_2$ films were compared with respect to the conditions of electrodeposition and post-annealing using SEM, XRD, Raman, AES and EDS analysis. And the conditions for preparing device-quality $CuInSe_2$ films by electrodeposition were proposed.

• Nano
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• v.13 no.12
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• pp.1850140.1-1850140.9
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• 2018

An electrochemical sensor ($Cu^{2+}$-IIPs/GCE) was developed for detection of $Cu^{2+}$ in water. $Cu^{2+}$-IIPs/GCE was prepared by dispersing $Cu^{2+}$ imprinted polymers ($Cu^{2+}$-IIPs) on a preprocessed glassy carbon electrode. $Cu^{2+}$-IIPs were synthesized on the surface of modified carbon spheres by ion imprinting technology. The electrochemical performance of $Cu^{2+}$-IIPs/GCE was evaluated by differential pulse voltammetry method. The response of $Cu^{2+}$-IIPs/GCE to $Cu^{2+}$ was linear in $1.0{\times}10^{-5}mol/L$ to $1.0{\times}10^{-3}mol/L$. The detection limit was $5.99{\times}10^{-6}mol/L$ (S=N = 3). The current response value of $Cu^{2+}$-IIPs/GCE was 2.14 times that of the nonimprinted electrode. These results suggest that $Cu^{2+}$-IIPs/GCE can detect the concentration of $Cu^{2+}$ in water, providing a new way for heavy metal ions adsorption and testing.

• Journal of Nutrition and Health
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• v.29 no.5
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• pp.528-532
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• 1996

The purpose of this study was to analyse copper intake and effect ofZn(30mg ZnSO4/d) supplementation on plasma copper level of Korean adults. Daily Cu intakes were studied in ninety subjects aging 20-20 years. Among them twenty four subjects participated in 6 weeks Zn supplementation study. The men consumed 1.47($\pm$0.64)mg of Cu and the women consumed 0.98($\pm$0.43)mg of Cu daily. the most abundant sources of Cu was meat, fish, egg and soybean group, the second was cereal and grain group and the third was vegetable group. These three groups supplied about 90% of copper in the subjects. The plasma copper level of the subjects was not changed much until two weeks of Zn supplementation. However, after two weeks of Zn supplementation plasma copper level was reduced continuously during the experiment. There was no significant difference in plasma Cu level between control and supplement group of the men, while the supplemented women showed significantly lower plasma Cu level than control group at week 4(p<0.01) and week 6(p<0.05). Although plasma Cu level of the subjects was slightly changed, its concentration in plasma was still in normal range in all groups and no one showed clinical Cu deficiency. Therefore the Zn supplementation of RDA level doesn't seem to cause any adverse effect on Cu status.

• Applied Microscopy
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• v.25 no.1
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• pp.130-138
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• 1995

TEM specimen preparation methods have been examined to characterize Cu oxide particles in the polyimide film. Polyimide films were prepared by coating polyamic acid onto Cu films which had been deposited on TEM-mask and glass substrates and Cu foil, followed by thermal curing. In case of TEM-mask, direct observation was possible without further preparation. In other cases, TEM specimen were made by separating polyimide film from the substrate. Polyimide films were removed from glass and Cu foil by dissolving glass in HF solution and Cu foil in $H_{2}SO_{4}$ solution. TEM-mask observation confirms that fine $Cu_{2}O$ particles precipitate in the polyimide as a result of reaction of polyamic acid with Cu. However $Cu_{2}O$ particle reacts with HF and $H_{2}SO_{4}$ solution during dissolving the substrate and interpretation could be misled. It is concluded characterization of $Cu_{2}O$ particle in polyimide using TEM-mask is better than other methods.

• Korean Journal of Materials Research
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• v.24 no.4
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• pp.186-193
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• 2014

A thin Cu seed layer for electroplating has been employed for decades in the miniaturization and integration of printed circuit board (PCB), however many problems are still caused by the thin Cu seed layer, e.g., open circuit faults in PCB, dimple defects, low conductivity, and etc. Here, we studied the effect of heat treatment of the thin Cu seed layer on the deposition rate of electroplated Cu. We investigated the heat-treatment effect on the crystallite size, morphology, electrical properties, and electrodeposition thickness by X-ray diffraction (XRD), atomic force microscope (AFM), four point probe (FPP), and scanning electron microscope (SEM) measurements, respectively. The results showed that post heat treatment of the thin Cu seed layer could improve surface roughness as well as electrical conductivity. Moreover, the deposition rate of electroplated Cu was improved about 148% by heat treatment of the Cu seed layer, indicating that the enhanced electrical conductivity and surface roughness accelerated the formation of Cu nuclei during electroplating. We also confirmed that the electrodeposition rate in the via filling process was also accelerated by heat-treating the Cu seed layer.