Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Composition Control of a Light Absorbing Layer of CuInSe2 Thin Film Solar Cells Prepared by Electrodeposition

전착법을 이용한 CuInSe2 박막태양전지 광활성층의 조성 조절

  • Park, Young-Il (National Agenda Research Division, Korea Institute of Science and Technology) ;
  • Kim, Donghwan (Green School, Korea University) ;
  • Seo, Kyungwon (Division of Chemical Engineering and Materials Science & Engineering, Ajou University) ;
  • Jeong, Jeung-Hyun (National Agenda Research Division, Korea Institute of Science and Technology) ;
  • Kim, Honggon (National Agenda Research Division, Korea Institute of Science and Technology)
  • 박영일 (한국과학기술연구원 국가기반기술연구본부) ;
  • 김동환 (고려대학교 에너지환경정책기술대학원) ;
  • 서경원 (아주대학교 화공.신소재공학부) ;
  • 정증현 (한국과학기술연구원 국가기반기술연구본부) ;
  • 김홍곤 (한국과학기술연구원 국가기반기술연구본부)
  • Received : 2013.01.07
  • Accepted : 2013.01.22
  • Published : 2013.03.01
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Abstract

Thin light-active layers of the $CuInSe_2$ solar cell were prepared on Mo-coated sodalime glass substrates by one-step electrodeposition and post-annealing. The structure, morphology, and composition of $CuInSe_2$ film could be controlled by deposition parameters, such as the composition of metallic precursors, the concentration of complexing agents, and the temperature of post-annealing with elemental selenium. A dense and uniform Cu-poor $CuInSe_2$ film was successfully obtained in a range of parametric variation of electrodeposition with a constant voltage of -0.5 V vs. a Ag/AgCl reference electrode. The post-annealing of the film at high temperature above $500^{\circ}C$ induced crystallization of $CuInSe_2$ with well-developed grains. The KCN-treatment of the annealed $CuInSe_2$ films further induced Cu-poor $CuInSe_2$ films without secondary phases, such as $Cu_2Se$. The structure, morphology, and composition of $CuInSe_2$ films were compared with respect to the conditions of electrodeposition and post-annealing using SEM, XRD, Raman, AES and EDS analysis. And the conditions for preparing device-quality $CuInSe_2$ films by electrodeposition were proposed.

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References

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