• 열처리공학회지
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• 제12권3호
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• pp.221-230
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• 1999

The surface nitrogen permeation of Al alloyed 0.14%C-13%Cr stainless steels was investigated after heat treating at $1050^{\circ}C{\sim}1150^{\circ}C$ in the nitrogen gas atmosphere. The strong affinity between Al and nitrogen permeates the nitrogen through the interior of the steels. Two precipitates of round type and needle type are observed at the surface layer. These precipitates mainly consist of AlN containing plenty of aluminum. The surface layer of 0.53%Al alloyed specimen shows ferrite phase, while the surface layers of 1.65%Al and 2.27%Al alloyed specimens appear ${\gamma}$ plus ${\alpha}$ phases. The depth of nitrogen permeation depends upon the Al content and microstructure of the matrix. The 1.65%Al alloyed specimen representing ${\alpha}+{\gamma}$ matrix phases at the nitrogen permeation temperature shows the maximum case depth in this experiment. Although the surface hardness increases by raising the Al content of the specimen owing to the increase of nitride precipitation density, the nitride precipitation deteriorates the corrosion resistance in the solution of HCl, $H_2SO_4$, and $FeCl_3$.

• 마이크로전자및패키징학회지
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• 제6권4호
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• pp.1-7
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• 1999

MCM-D 기판에 수동소자를 내장시키는 공정을 개발하였다. MCM-D 기판은 Cu/감광성 BCB를 각각 금속배선 및 절연막 재료로 사용하였고, 금속배선은 Ti/cu를 각각 1000$\AA$/3000$\AA$으로 스퍼터한 후 fountain 방식으로 전기 도금하여 3 um Cu를 형성하였으며, BCB 층에 신뢰성있는 비아형성을 위하여 BCB의 공정특성과 $C_2F_6$를 사용한 플라즈마 cleaning영향을 AES로 분석하였다. 이 실험에서 제작한 MCM-D 기판은 절연막과 금속배선 층이 각각 5개, 4개 층으로 구성되는데 저항은 2번째 절연막 위에 thermal evaporator 방식으로 NiCr을 600$\AA$증착하여 시트저항이 21 $\Omega$/sq가 되게 형성하였고. 인덕터는 coplanar 구조로 3, 4번째 금속배선층에 형성하였으며, 커패시터는 절연막으로 PECVD $Si_3N_4$를 900$\AA$증착한 후 1, 2번째 금속배선층에 형성하여 88nF/$\textrm {cm}^2$의 커패시턴스를 얻었다. 이 공정은 PECVD $Si_3N_4$와 thermal evaporation NiCr 공정을 이용함으로써 기존의 반도체 공정을 이용하여 MCM-D 기판에 수동소자를 안정적으로 내장시킬 수 있었다.

• Corrosion Science and Technology
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• 제13권2호
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• pp.48-55
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• 2014

Influence of annealing temperature on the microstructure and resistance to pitting corrosion of the hyper duplex stainless steel was investigated in acid and neutral chloride environments. The pitting corrosion resistance is strongly dependent on the microstructure, especially the presence of chromium nitrides ($Cr_2N$), elemental partitioning behavior and volume fraction of ferrite phase and austenite phase. Precipitation of deleterious chromium nitrides reduces the resistance to pitting corrosion due to the formation of Cr-depleted zone. The difference of PREN (Pitting Resistance Equivalent Number) values between the ferrite and austenite phases was the smallest when solution heat-treated at $1060^{\circ}C$. Based on the results of electrochemical tests and critical crevice temperature tests, the optimal annealing temperature is determined as $1060^{\circ}C$.

• 열처리공학회지
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• 제19권2호
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• pp.83-89
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• 2006

The surface phase changes, the hardness variations, the nitrogen contents and the corrosion resistances of 17-4 PH stainless steel have been investigated after nitrogen permeation(solution nitriding) at a temperature ranges from $1050^{\circ}C$ to $1150^{\circ}C$ The phases appeared at the nitrogen-permeated surface layer were shown to martensite plus austenite and austenite, depending on the variation of nitrogen and chromium contents. And the surface hardness was also depended on the phases appeared at the surface layer from 370 Hv to 220 Hv. The precipitates exhibited at the nitrogen-permeated surface layer were niobium nitride, niobium chromium nitride and carbo-nitride in the austenite and martensite matrices. The surface nitrogen contents were followed by the Cr contents of the surface layers, representing 0.55% at the temperatures of $1050^{\circ}C$ and $1150^{\circ}C$ respectively, and 0.96% at $1100^{\circ}C$ at the distances of $60{\mu}m$ from the outmost surface. From the comparison of the corrosion resistances between nitrogen-permeated and solution-annealed steels, nitrogen permeation remarkably improved the corrosion resistance in the solution of 1 N $H_2SO_4$ due to the increase of nitrogen content in the surface austenite phase.

• 열처리공학회지
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• 제20권6호
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• pp.323-328
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• 2007

This study has been investigated the effect of high temperature gas nitriding (HTGN) heat treatment of STS 444 (18Cr-0.01Ni-0.01C-0.2Nb) ferritic stainless steel in an atmosphere of nitrogen gas at the temperature range between $1050^{\circ}C\;and\;1150^{\circ}C$. The surface layer was changed into martensite and austenite with the nitrides of NbCrN by HTGN treatment. Due to the precipitation of nitrides and matrensite formation, the hardness of the surface layer showed $400Hv{\sim}530Hv$. The nitrogen concentration of the surface layer appeared as 0.05%, 0.12% and 0.92%, respectively, at $1050^{\circ}C,\;1100^{\circ}C\;and\;1150^{\circ}C$. When the nitrogen is permeated from surface to interior, Nb and Cr, which have strong affinities with nitrogen, also move from interior to surface. Therefore it is considered that this counter-current of atoms promotes the formation of NbCrN at the surface layer.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.189-189
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• 2011

인공관절은 노인성 질환이나 자가 면역질환, 신체적인 외상 등으로 인하여 발생하는 관절의 손상 부위를 대체하기 위해 고안된 관절의 인공 대용물이다. 인공 관절 중 인공 고관절의 경우 관절 운동을 하는 라이너(Liner)와 헤드(Head) 부분이 인공관절의 수명을 결정하게 되는데, 헤드 부분에 메탈소재와 라이너 부분에 고분자 소재를 사용하는 MOP (metal on polymer) 구조의 인공관절은 충격흡수의 장점이 있는 반면 wear debris에 의한 골용해로 인하여 관절이 느슨해지는 문제점이 발생하여 재 시술의 주요 원인이 되고 있다. 또한 메탈 헤드의 마모로 인한 금속이온의 용출은 세포 독성의 문제를 야기하여 인공관절의 수명을 낮추는 또 하나의 요인이 되고 있다. 따라서 인공관절의 수명을 늘리기 위해 DLC, ZrO, TiN 등의 높은 경도 값을 갖는 박막을 금속 헤드 위에 증착하여 상대재인 인공관절용 고분자 소재의 마모량을 줄이고자 하는 연구가 활발하게 진행 되고 있다. 본 연구에서는 PIII&D (Plasma Immersion Ion Implantation & Deposition)공정을 이용하여 Co-Cr-Mo 합금 소재 niobium nitride (NbN) 박막을 증착하여 상대제인 UHMWPE (ultra high molecular polyethylene)의 마모를 줄이고자 하는 연구를 진행하였다. 마모량을 감소시키기 위하여, 박막 증착전에 질소를 이온주입하는 pre-ion implantation 공정을 도입하였으며, 또한 Co-Cr 합금과 NbN박막 사이의 접착력을 증가시키기 위하여 박막의 증착 초기에 이온주입과 증착을 동시에 수행하는 dynamic ion mixing공정을 수행하였다. NbN 박막의 특성을 평가하기 위해 XRD, XPS, AFM 등의 분석을 수행하였으며, 상대재인 초고분자량 폴리에틸렌의 마모량을 측정하기 위해 Pin-on-disk tester를 이용하여 마모 실험을 진행하였다. 마모 실험 결과, pre-ion implantation 공정을 도입한 경우 현재 상용화 되어있는 Co-Cr 합금에 비하여 마모량을 2배 이상 감소시키는 것을 확인 할 수 있었으며, dynamic ion mixing 공정을 도입한 경우 장시간의 마모 시험에 대한 마모 특성이 향상 되는 것을 확인 할 수 있었다.

• 열처리공학회지
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• 제20권6호
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• pp.311-317
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• 2007

This study examined the phase changes, nitride precipitation and variation in mechanical properties of STS 304, STS 321 and STS 316L austenitic stainless steels after high temperature gas nitriding (HTGN) at temperature ranges from $1050^{\circ}C\;to\;1150^{\circ}C$. Fine round type of $Cr_2N$ nitrides were observed in the surface layers of 304 and 316L steels, even more in STS 321. Additionally, square type of TiN was found in STS 321 austenitic matrix too. As a result of many precipitates in the surface layer of the STS 321, it was seen $370{\sim}470Hv$ hardness variation depending on the HTGN treatment conditions, and interior region of austenite represented 150Hv. The surface hardness value of STS 304 and STS 316L showed $255{\sim}320Hv$, respectively. The nitrogen content was shown 0.27, 1.7 and 0.4% respectively at the surface layers of the STS 304, STS 321 and STS 316L. After the HTGN it was shown the improvement of corrosion resistance of the STS 321 and STS 316L compared with solution annealed steels in the solution of 1N $H_2SO_4$ whereas the STS 304 was not.

• 센서학회지
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• 제4권1호
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• pp.3-8
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• 1995

ITO(indium tin oxide)와 PSL(porous silicon layer)을 이용하여 n-ITO/p-PSL 이종접합형 광검출 소자를 실리콘 기판상에 제조하였다. 실리콘 질화막과 Ni-Cr/Au를 이용하여 선택적으로 양극반응을 시켰으며, 각 소자를 메사구조로 정의하여 소자간을 격리하였고 ITO를 이용하여 소자의 열화문제를 억제시켰다. 제조된 소자에 백색광을 $0{\sim}3000Lux$까지 변화시키면서 얻은 I-V 특성으로부터 광전류가 입사된 광량에 선형적으로 비례함을 알았다. 제조된 소자는 약 -40V의 역방향 바이어스까지 안정되게 동작하였으며 암전류 밀도가 약 $40nA/mm^{2}$로 나타났다. Xe램프를 이용하여 $400nm{\sim}1100nm$까지 파장을 변화시키면서 측정한 결과 $600nm{\sim}700nm$사이에서 약 0.6A/W의 광응답을 나타내었다. 또한 제조된 소자는 3주 경과 후에도 거의 특성의 변화가 관찰되지 않았다.

• Corrosion Science and Technology
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• 제9권1호
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• pp.20-28
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• 2010

According to the bipolar model, ion selectivity of some species in the passive film is important factor to control the passivation. An increase of cation selectivity of outer layer of the passive film can stabilize the film and improves the corrosion resistance. Therefore, the formation and roles of ionic species in the passive film should be elucidated. In this work, two types of solution (hydrochloric or sulfuric acid) were used to test high N and Mo-bearing stainless steels. The objective of this work was to investigate the formation of oxyanions in the passive film and the roles of oxyanions in passivation of stainless steel. Nitrogen exists as atomic nitrogen, nitric oxide, nitro-oxyanions (${NO_x}^-$), and N-H species, not nitride in the passive film. Because of its high mobility, the enriched atomic nitrogen can act as a reservoir. The formation of N-H species buffers the film pH and facilitates the formation of oxyanions in the film. ${NO_x}^-$ species improve the cation selectivity of the film, increasing the oxide content and film density. ${NO_x}^-$ acts similar to a strong inhibitor both in the passive film and at active sites. This facilitates the formation of chromium oxide. Also, ${NO_x}^-$ can make more molybdate and nitric oxide by reacting with Mo. The role of Mo addition on the passivation characteristics of stainless steel may differ with the test environment. Mo exists as metallic molybdenum, molybdenum oxide, and molybdate and the latter facilitates the oxide formation. When nitrogen and molybdenum coexist in stainless steel, corrosion resistance in chloride solutions is drastically increased. This synergistic effect of N and Mo in a chloride solution is mainly due to the formation of nitro-oxyanions and molybdate ion. Oxyanions can be formed by a 'solid state reaction' in the passive film, resulting in the formation of more molybdate and nitric oxide. These oxyanions improve the cation selectivity of the outer layer and form more oxide and increase the amount of chromium oxide and the ratio of $Cr_2O_3/Cr(OH)_3$ and make the film stable and dense.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.147-147
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• 2011

High crystalline nonpolar a-plane (11-20) nitride light emitting diodes (LEDs) have been fabricated on r-plane (1-102) sapphire substrates by metalorganic chemical-vapor deposition (MOCVD). The multi-quantum wells (MQWs) active region is consists of 4 periods the nonpolar a-plane InGaN/GaN(a-InGaN/GaN) on a high quality a-plane GaN (a-GaN) template grown by using the multibuffer layer technique. The full widths at half maximum (FWHMs) of x-ray rocking curve (XRC) obtained from phiscan of the specimen that was grown up to nonpolar a-plane GaN LED layers with double crystal x-ray diffraction. The FWHM values were decreased down to 477 arc sec for $0^{\circ}$ and 505 arc sec for $-90^{\circ}$, respectively. After fabricating a conventional lateral LED chip which size was $300{\times}600{\mu}m^2$, we measured the optical output power by on-wafer measurements. N-electrode was made with Cr/Au contact, and ITO on p-GaN was formed with Ohmic contact using Ni/Au followed by inductively coupled plasma etching for mesa isolation. The optical output power of 1.08 mW was obtained at drive current of 20 mA with the peak emission wavelength of 502 nm.