• 한국세라믹학회지
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• 제44권7호
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• pp.387-392
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• 2007

Thermal conductivities in $La_2Ce_2O_7-Gd_2Ce_2O_7-Y_2Ce_2O_7$ ternary system have been investigated. Pyrochlore phases formed at all ternary compositions and their sinterbilities were decreased with La addition. Thermal conductivities showed a minimum value at $La_2Ce_2O_7$ with moderate increases as $Y^{3+}$ and $Gd^{3+}$ ions replaced $La^{3+}$. Thermal expansion anomaly observed in $La_2Ce_2O_7$, which might be detrimental to TBC application, were suppressed by $Y^{3+}$ and $Gd^{3+}$ additions, with resultant thermal conductivities, $1.3{\sim}1.5 W/mK$ at $1000^{\circ}C$.

• 대한환경공학회지
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• 제37권12호
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• pp.668-673
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• 2015

마이크로파 열분해 시스템을 이용하여 Ce 담지량이 다른 알루미나 촉매의 $CF_4$ 분해에 대한 연구를 실시하였다. 마이크로파 발열체로는 실리콘카바이드를 사용하였다. 각 촉매의 결정상은 XRD로 관찰하였으며 $CF_4$의 분해율은 GC-TCD를 사용하였다. $500^{\circ}C$ 반응온도에서 10 wt% Ce로 개질화한 알루미나가 개질화하지 않은 알루미나에 비해 $CF_4$ 분해율이 높았다. 반응속도상수 k값은 $Ce(20)/Al_2O_3=Ce(0)/Al_2O_3 순이었다. XRD 패턴은 $Ce(0)/Al_2O_3$에서는 반응 전후의 차이가 나타나지 않았으며 $Al_2O_3$의 결정구조만 관찰되었다. 반면에 Ce를 담지한 촉매에서는 산화알루미늄와 산화세륨의 혼합형으로 나타났다. 본 연구의 결과 Ce를 담지한 $Al_2O_3$촉매는 Ce를 담지하지 않은 촉매에 비해 동일한 분해율을 가지면서 반응온도를 $200^{\circ}C$ 정도를 낮출 수 있음을 보여주었다. 또한 cerium sulfate의 적정비율은 5~10 wt%임을 보여주었다.

• 자원환경지질
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• 제37권6호
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• pp.603-612
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• 2004

고준위 폐기물 내에 함유된 핵종을 고정화시킬 수 있는 매트릭스로써 파이로클로어$(pyrochlore;\;CaCeZr_xTi_{2-x}O_7,\;x=0.2\~2.0)$를 합성하여 상평형 관계 및 특성을 연구하였다. 합성방법은 CPS법이었으며, $1100\~1600^{\circ}C$에서 20시간 동안 가열하였다. 실험결과, 최적 합성조건은 각각의 조성에 따라 $1300\~1600^{\circ}C$로 다양하였다. 최적 합성조건에서 파이로클로어 또는 형석구조를 나타내는 산화물(이하 '형석'으로 기재)은 소량의 페롭스카이트와 더불어 $CeO_2$ 또는 $Ce_{0.75}Zr_{0.25}O_2$와 공존하였다. 또한 원조성인 $CaCeZr_xTi_{2-x}O_7$중 $x\leq0.6$인 경우 파이로클로어 구조가, 그리고 $x\geq0.6$에서는 형석구조가 안정한 것을 확인하였다. 특히 x값의 증가에 따라, Ca 및 Ti 성분이 결핍되었으며, 이와는 대조적으로 Zr과 Ce가 초과됨으로써 비화학양론적 조성을 나타내었다. 이러한 특성은 팔배위와 육배위를 차지하고 있는 원소들의 거동에 의한 것으로, 파이로클로어 또는 형석이 단일상이 아니라 페롭스카이트, $CeO_2$ 및 $Ce_{0.75}Zr_{0.25}O_2$와 공존하는 원인이 된 것으로 사료된다.

• 한국세라믹학회지
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• 제37권7호
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• pp.705-712
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• 2000

In this study, the dispersion stability of CeO2 based complex oxide was studied, and density, porosity, and microstructure of green body were investigated using colloid surface chemistry to manufacture the Gd2O3 doped CeO2 solid electrolyte in an aqueous system. To prepare the stable slurry for slip casting, the dispersion stability was examined as a function of pH using ESA(electrokinetic sonic anplitude) analysis. The dynamic mobility of particles was enhanced with anionic and cationic dispersant were added the amount of 0.5wt% respectively, but pH value in slurries didn't move to below 6.0 because of the influence of dopants. This phenomenon also appeared in the CeO2-Y2O3 and CeO2-Sm2O3 systems, so it could be inferred that rare earth dopants such as Gd2O3, Sm2O3 and Y2O3 not only have the similar motion with changing pH in an aqueous system but also can be dissolved in the range of pH 6.0∼6.5. In CeO2-Gd2O3 system, when the anionic dispersant was added the amount of 0.5wt% and pH value in slurries was fixed at 9.5, the green body density was 4.07g/㎤, and the relative density of sintered body was 95.2%. It could be inferred from XRD analysis that Gd3+ substituted into Ce4+ site because there was no free Gd2O3 peak.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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• pp.469-472
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• 1999

CeO$_2$ thin films have used in wide applications such as SOI, buffer layer, antirflection coating, and gate dielectric layer. CeO$_2$takes one of the cubic system of fluorite structure and shows similar lattice constant (a=0.541nm) to silicon (a=0.543nm). We investigated CeO$_2$films as buffer layer material for nonvolatile memory device application of a single transistor. Aiming at the single transistor FRAM device with a gate region configuration of PZT/CeO$_2$ /P-Si , this paper focused on CeO$_2$-Si interface properties. CeO$_2$ films were grown on P-type Si(100) substrates by 13.56MHz RF magnetron sputtering system using a 2 inch Ce metal target. To characterize the CeO$_2$ films, we employed an XRD, AFM, C-V, and I-V for structural, surface morphological, and electrical property investigations, respectively. This paper demonstrates the best lattice mismatch as low as 0.2 % and average surface roughness down to 6.8 $\AA$. MIS structure of CeO$_2$ shows that breakdown electric field of 1.2 MV/cm, dielectric constant around 13.6 at growth temperature of 200 $^{\circ}C$, and interface state densities as low as 1.84$\times$10$^{11}$ cm $^{-1}$ eV$^{-1}$ . We probes the material properties of CeO$_2$ films for a buffer layer of FRAM applications.

• 한국재료학회지
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• 제3권3호
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• pp.276-281
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• 1993

3원계 U-Ce-O산화물의 소결거동을 연구하기 위하여 $UO_2$ 및 $CeO_2$분말을 ball-mill 방법으로 혼합한 (U, Ce)$O_2$의 영향이고, 나중에 나타나는 극대점은 $CeO_2$의 영향 때문이다. 또한 $Ceo_{2}$함량이 증가할수록 소결이 지연됨을 알수 있었다. 동일한 10wt. % $CeO_2$함량에서, 4시간동안 ball-milling을 하였을때가 소결속도는 가장 빨랐다.

• 청정기술
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• 제26권4호
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• pp.286-292
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• 2020

본 연구는 Cu/CeO2-X 촉매의 저온 CO 산화 활성에 미치는 영향을 촉매의 구조적 특성, 반응 특성을 통해 확인하였다. 사용된 촉매는 습윤 함침법으로 제조되었으며, 각기 다른 소성온도(300~600 ℃)에서 형성된 CeO2 (지지체)를 이용하여 Cu (활성금속)를 담지함으로써 Cu/CeO2-X 촉매를 제조하였다. 제조된 Cu/CeO2-X 촉매는 저온 CO 산화 활성을 평가하였다. 125 ℃에서 Cu/CeO2_300 촉매는 90% 이상의 활성을 나타냈으며, CeO2의 소성온도가 증가됨에 따라 활성이 점차 감소하여, Cu/CeO2_600 촉매는 65%를 나타냈다. 다음으로 촉매의 물리/화학적 특성을 Raman, BET, XRD, H2-TPR, XPS 분석으로 확인하였다. XPS 분석 결과, CeO2-X의 소성온도가 낮을 수록 불안정한 Ce3+ 종(비 화학양론 종) 비율이 증가하였다. 증가된 Ce3+종은 Cu와 결합함으로 써 치환결합을 형성하였으며 Raman 분석의 CeO2 peak 변화와 H2-TPR 분석의 치환결합 구조의 환원 peak를 통해 확인하였다. 결과적으로 Cu와 CeO2의 치환 결합 형성은 촉매의 redox 특성 및 저온 CO 산화 활성을 증진시켰다고 판단된다.

• 한국재료학회지
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• 제15권2호
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• pp.112-114
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• 2005

Dispersion stability of the $Sm_xCe_{1-x}O_{2-2/x}$ nanoparticles, which was produced by hydrothermal process, was studied in aqueous suspension using ESA (Eletrokinetic Sonic Amplitude). The average particle size of the synthesized $Sm_xCe_{1-x}O_{2-2/x}$ at nanoparticles was about $5{\pm}2nm$. The dispersion and rheological behavior of the $Sm_xCe_{1-x}O_{2-2/x}$ nanoparticles aqueous suspension was investigated using $NH_4OH\;and\;HNO_3$ as a disperse agent. The colloidal stability of aqueous suspensions with $Sm_xCe_{1-x}O_{2-2/x}$ nanoparticles at different pH values has been investigated by means of zeta potential, average particle size, and the distribution of synthesized $Sm_xCe_{1-x}O_{2-2/x}$ nanoparticles. The isoelectric point of the $Sm_xCe_{1-x}O_{2-2/x}$ nanoparticles was at pH around 11 and the value of zeta potential was at its maximum near pH 6.5.

• 한국전기전자재료학회논문지
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• 제16권11호
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• pp.979-986
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• 2003

Sintering behavior and electrical properties of CeO$_2$ system were investigated as a function of the amount of Gd:$_2$O$_3$, and Sm$_2$O$_3$, addition. Doped CeO$_2$ consisted of a homogeneous solid solution of the cubic fluorite structure within the amount of addition from 0 mol% to 15 mol%. Grain growth rate of Gd$_2$O$_3$-doped CeO$_2$ was much smaller than that of pure CeO$_2$, while densification rate was considerably larger. Thus doped CeO$_2$ showed a higher density than pure CeO$_2$. The electrical conductivity of Ce$_1$-$_{x}$Sm$_{x}$O$_1$-$_{x}$/2 was increased up to x = 0.2. However, with further increasing dopant concentrations, the magnitude of the conductivity was found to decrease remarkably. The ionic conductivity value obtained at $700^{\circ}C$ for 10 mol% Sm$_2$O$_3$-doped CeO$_2$ electrolyte was 4.6${\times}$10$^{-2}$ S$.$$cm^{-1}$ /.EX> /.

• 한국세라믹학회지
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• 제30권11호
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• pp.941-948
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• 1993

The powder mixture of Si3N4-AlN-Y2O3, Si3N4-AlN-CeO2 and Si3N4-AlN-Y2O3-CeO2 system was hot-pressed at 175$0^{\circ}C$ for 2h in N2 to prepare $\alpha$-Sialon ceramics. The mechanical property and oxidation behaviour of the prepared $\alpha$-Sialon ceramics were investigated. At 120$0^{\circ}C$, oxidation resistance was best for the Y2O3 added $\alpha$-Sialon ceramics and oxidation rate increased when the amount of CeO2 increased. But when the mixture of Y2O3 and CeO2 added $\alpha$-Sialon ceramics showed a good oxidation resistance. Fracture toughness of (Y2O3＋CeO2) added $\alpha$-Sialon ceramics was higher than Y2O3 added $\alpha$-Sialon ceramics.