Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Effect of Gd2O3 and Sm2O3 Addition on the Properties of CeO2

CeO2에서의 Gd2O3 및 Sm2O3첨가량변화에 따른 특성변화

  • Published : 2003.11.01
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Abstract

Sintering behavior and electrical properties of CeO$_2$ system were investigated as a function of the amount of Gd:$_2$O$_3$, and Sm$_2$O$_3$, addition. Doped CeO$_2$ consisted of a homogeneous solid solution of the cubic fluorite structure within the amount of addition from 0 mol% to 15 mol%. Grain growth rate of Gd$_2$O$_3$-doped CeO$_2$ was much smaller than that of pure CeO$_2$, while densification rate was considerably larger. Thus doped CeO$_2$ showed a higher density than pure CeO$_2$. The electrical conductivity of Ce$_1$-$_{x}$Sm$_{x}$O$_1$-$_{x}$/2 was increased up to x = 0.2. However, with further increasing dopant concentrations, the magnitude of the conductivity was found to decrease remarkably. The ionic conductivity value obtained at $700^{\circ}C$ for 10 mol% Sm$_2$O$_3$-doped CeO$_2$ electrolyte was 4.6${\times}$10$^{-2}$ S$.$$cm^{-1}$ /.EX> /.

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References

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