• Nano
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• v.13 no.10
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• pp.1850118.1-1850118.17
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• 2018

Nanoparticles of the semiconductor catalyst $Cd_xZn_{1-x}S$ were embedded into the metal organic framework MIL-101(Cr) to obtain $Cd_xZn_{1-x}S@MIL-101$(Cr) nanocomposites. These materials not only possess high surface areas and mesopores but also show good utilization of light energy. The ultraviolet-visible diffuse reflectance patterns of $Cd_xZn_{1-x}S@MIL-101$(Cr) nanocomposites showed that $Cd_{0.8}Zn_{0.2}S@MIL-101$(Cr) possessed good visible light response ability among the synthesized nanocomposites. The photocatalytic performance of the $Cd_xZn_{1-x}S@MIL-101$(Cr) nanocomposites were tested via degradation and mineralization of methylene blue in neutral water solution under light irradiation using a 300W xenon lamp. As a result, using $Cd_{0.8}Zn_{0.2}S@MIL-101$(Cr) as a catalyst, 99.2% of methylene blue was mineralized within 30 min. Due to the synergistic effect of adsorption by the MIL-101(Cr) component and photocatalytic degradation provided by the $Cd_{0.8}Zn_{0.2}S$ component, the $Cd_{0.8}Zn_{0.2}S@MIL-101$(Cr) catalyst displayed superior photocatalytic performance relative to $Cd_{0.8}Zn_{0.2}S$ and MIL-101(Cr). Furthermore, $Cd_{0.8}Zn_{0.2}S@MIL-101$(Cr) possessed excellent stability during photodegradation and exhibited good reusability. The remarkable photocatalytic performance of $Cd_{0.8}Zn_{0.2}S@MIL-101$(Cr) is likely due to the effective transfer of electrons and holes at the heterojunction interfaces.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.26 no.1
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• pp.101-112
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• 2015

II~VI compound semiconductors, $Zn_xCd_{1-x}S$ thin films have been synthesized onto indium-tin-oxide(ITO) coated glass substrates using thermal evaporation technique. The composition ratio x($0{\leq}x{\leq}1$) was varied to fabricate different kinds of $Zn_xCd_{1-x}S$ thin films including CdS(x=0) and ZnS(x=1) thin films. Then, the deposited thin films were thermally annealed at $400^{\circ}C$ to enhance their crystallinity. The chemical composition and electronic structure of films were investigated by using X-ray photoelectron spectroscopy(XPS). The optical energy gaps of the samples were determined by ultra violet-visible-near infrared(UV-Vis-NIR) spectroscopy and were found to vary in the range of 2.44 to 3.98 eV when x changes from 0 to 1. Finally, we measured the THz characteristics of the $Zn_xCd_{1-x}S$ thin films using THz-TDS(time domain spectroscopy) system to identify the capability for electronic and optical devices in THz region.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05b
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• pp.39-42
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• 2002

There is a renewed interest in the application of photoconductors especially Cd(Zn)Te to x-ray imaging. In this paper, We investigate effects on x-ray detection characteristic of Zn dopped CdTe detector. Cd(Zn)Te film was fabricated by vacuum thermal evaporation method and then investigate physical analysis using EPMA and XRD. We investigated the leakage current and X-ray photosensitivity as applied voltage about fabricated Cd(Zn)Te film. Experimental results showed that the increase of Zn dopped concentration in $Cd_{1-x}Zn_{x}Te$ detector reduced a leakage current and improved a signal to noise ratio significantly.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1988.05a
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• pp.35-37
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• 1988

Polycrystalline $Cd_{1-x}Zn_xS$ films were prepared by coaling a slurry which consisted of CdS, ZnS, $CdCl_2$ and propylene glycol on gloss substrates and by sintering in a nitrogen atmosphere. Microstructures, optical transmittance and electrical resistance of the sintered films have been investigatd. Grain shape of $Cd_{1-x}Zn_xS$ films sintered in a sealed boat was nearly spherical but the shape became, irregular when sintered in evaporating condition due to occurrence of CIGM (Chemically Induced Grain-boundary Migration). Controlling the rate of evaporation of $CdCl_2$, sintered $Cd_{1-x}Zn_xS$ films with high optical transmittance and low electrical resistance could be obtained.

• Proceedings of the KIEE Conference
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• 1997.07d
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• pp.1283-1285
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• 1997

In this paper, structural, optical and electrical properties of $Cd_{1-x}Zn_xS$ thin films prepared by co-evaporation method were studied. The crystal structure of $Cd_{1-x}Zn_xS$ films deposited at a substrate temperature of $150^{\circ}C$ was hexagonal with the c axis aligned perpendicular to the substrate. As increasing composition parameter x, the intensity of (002) peak decreased, which means poor crystalline and decreasing of preferential orientation. The optical bandgap of $Cd_{1-x}Zn_xS$ films varies from 2.41eV for CdS to 3.48eV for ZnS with x. The resistivity of the $Cd_{1-x}Zn_xS$ films increased with x.

• Solar Energy
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• v.8 no.1
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• pp.41-48
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• 1988

Heterojunction solar cells of $n-Cd_{1-x}Zn_xS/p-Si$ were fabricated by solution growth technique. The crystal structure, spectral response, surface morphology, and I-V characteristics of the $n-Cd_{1-x}Zn_xS/p-Si$ heterojunction solar cells were studied. The $Cd_{1-x}Zn_xS$ layer deposited on a silicon substrate (111) were found to be a cubic structure with the crystal orientation (111), (220) of the CdS and to be a hexagonal structure with crystal orientation (100) of the ZnS. The open-circuit voltage, short-circuit current, fill factor, and conversion efficiency of $n-Cd_{1-x}Zn_xS/p-Si$ heterojunction solar cell under $100mW/cm^2$ illumination were found to be 0.43V, 38mA. 0.76, and 12.4%, respectively.

• Korean Journal of Optics and Photonics
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• v.3 no.1
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• pp.55-62
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• 1992

The optical absorption characteristics of glasses colored by CdS. CdSe, $CdS_{1-x}Se_x$,ZnS, and ZnSe microcrystallites have been studied with emphasis on changes of the cut-off wavelength. The sharpcut filters with various cut-off wavelengths were fabricated by controlling the composition and the heat-treatment temperature. The cut-off wavelength shifts due to the different heat-treatment temperatures for CdS. CdSe, ZnS, and ZnSe doped SK-16 glasses were found to be relatively small(~30 nm). However, by treating the CdS1,Se, doped SK-16 glasses with different x values at the same heattreatment temperature, it was possible to obtain the filters with various cut-off wavelengths(~130 nm) without losing the high extinction coefficients of the filters. The filter glasses with various cut-off wavelngths(~100 nm) and high extinction coefficiencts were also produced by treating the CdSe and $CdS_{0.5}Se_{0.5}$ doped ZK-1 glasses at different temperatures.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.2
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• pp.104-110
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• 2001

Structural, optical and electrical properties of Cd$_{1-x}$ Zn$_{x}$S films deposited by chemical bath deposition(CBD), which is a very attractive method for low-cost and large-area solar cells, are presented. Especially, in order to control more effectively the zinc component of the films, zinc acetate, which was used as the zinc source, was added in the reaction solution after preheating the reaction solution and the pH of the reaction solution decreased with increasing the concentration of zinc acetate. The films prepared after preheating and pH control had larger zinc component and higher optical band gap. The crystal structures of Cd$_{1-x}$ Zn$_{x}$S films was a wurtzite type with a preferential orientation of the (002) plane and the lattice constants of the films changed from the value for CdS to those for ZnS with increasing the mole ratio of the zinc acetate. The minimum lattice mismatch between Cd$_{1-x}$ Zn$_{x}$S and CdTe were 2.7% at the mole ratio of (ZnAc$_2$)/(CdAc$_2$+ZnAc$_2$)=0.4. As the more zinc substituted for Cd in the films, the optical transmittance improved, while the absorption edge shifted toward a shorterwavelength. the photoconductivity of the films was higher than the dark conductivity, while the ratio of those increased with increasing the mole ratio of zinc acetate. acetate.

• Journal of the Korea Institute of Military Science and Technology
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• v.15 no.4
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• pp.502-506
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• 2012

In order to find the structural characteristics of the thin films of group II-VI semiconductor compounds compared with those of powder materials, films were made of 4 powders of ZnS, CdS, CdSe, and CdTe(Aldrich), each with 99.99 % purity. For the ZnS/CdS multi-layers, the ZnS layer was coated over the CdS layer on an $AlO_x$ membrane, which served as a protective layer within a vacuum at the average speed of 1 ${\AA}$/sec. After studying the structures of the group II-VI semiconductor thin films by using X-ray spectroscopy, we found that the ZnS, ZnS/CdS, CdS, and CdSe films were hexagonal and exhibited some degree of preferred orientation. Also, the particles of the thin films of II-VI semiconductor compounds proved to be more homogeneous in size compared to those of the powder materials. These results were further verified through scanning electron microscopy(SEM), EDX analysis, and powder and thin film X-ray diffraction.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.57-57
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• 2010

Self assembled $Zn_{x-1}Cd_xS$ nanowires, synthesized on a Indium tin oxide coated glass substrate with low composition of Cd as x=0.09, were fabricated non-precursor via a co-evaporation method using of solid sources of CdS and ZnS. We studies that ZnCdS nanowires are dislocation-free and the single crystalline hexagonal wurtzite structure showed by transmission electron microscopy and selected area electron diffraction pattern. Cathode luminescence spectra showed an near band edge peak at 383nm originated from nanowires at 80K and 300K. Core level spectra of the Cd 3d, Zn 2p and S 2p in the ZnCdS nanorods were obtained by x-ray photoelectron spectroscopy. Prepared ZnCdS nanorods showed different shape with increase of substrate temperature at the growth.