• Journal of the Korean Ceramic Society
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• v.28 no.11
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• pp.892-896
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• 1991

The cyrstallization behavior of lead titanate powders prepared by sol-gel and coprecipitation techniques was investigated. The lead titanate precursors were derived from a mixed solution of lead nitrate and titanium tetrachloride at 4$0^{\circ}C$ to 43$^{\circ}C$ and pH of 9.00 to 9.75. The X-ray diffraction patterns of the dried gel and coprecipitated powders showed it to be amorphous. DTA runs of the powders indicated crystallization to occur at 475~48$0^{\circ}C$. However, the amorphous powders were partially crystallized at 400~45$0^{\circ}C$ with sufficient annealing time. The room temperature Raman spectra from heat-treated powders changed continuously from amorphous to crystalline state with increasing heat-treating temperature. By annealing coprecipitated powders, a dramatic change in the Raman spectra due to the structural relaxation as the annealing temperatures increased, was clearly visible. i.e., coprecipitated, gel, and crystalline structure, in turn.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.71-71
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• 2012

As the critical dimensions of integrated circuits are scaled down, the line width and spacing between the metal interconnects are made smaller. The dielectric film used as insulation between the metal lines contributes to the resistance-capacitance (RC) time constant that governs the device speed. If the RC time delay, cross talk and lowering the power dissipation are to be reduced, the intermetal dielectric (IMD) films should have a low dielectric constant. The introduction of Cu and low-k dielectrics has incrementally improved the situation as compared to the conventional $Al/SiO_2$ technology by reducing both the resistivity and the capacitance between interconnects. Some of the potential candidate materials to be used as an ILD are organic and inorganic precursors such as hydrogensilsequioxane (HSQ), silsesquioxane (SSQ), methylsilsisequioxane (MSQ) and carbon doped silicon oxide (SiOCH), It has been shown that organic functional groups can dramatically decrease dielectric constant by increasing the free volume of films. Recently, various inorganic precursors have been used to prepare the SiOCH films. The k value of the material depends on the number of $CH_3$ groups built into the structure since they lower both polarity and density of the material by steric hindrance, which the replacement of Si-O bonds with Si-$CH_3$ (methyl group) bonds causes bulk porosity due to the formation of nano-sized voids within the silicon oxide matrix. In this talk, we will be introduce some properties of SiOC(-H) thin films deposited with the dimethyldimethoxysilane (DMDMS: $C_4H_{12}O_2Si$) and oxygen as precursors by using plasma-enhanced chemical vapor deposition with and without ultraviolet (UV) irradiation.

• Journal of the Korean Ceramic Society
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• v.38 no.4
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• pp.307-307
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• 2001

Combustion process with citrate was used to produce the LiMn$_2$O$_4$powder. Precursors are pre-ignited in open air followed by post-heating in the range from $600^{\circ}C$ to 80$0^{\circ}C$ for 4h. With varying the molar ratio (R) of ethylene glycol (EG) to citric acid (CA) from 0 to 4, the effect of EG content on powder characteristics is evaluated. Vacuum drying promote the auto-ignition at room temperature. With small addition of EG metal ion was selectively segregated with organic substances and undesired lithium evaporation occurred during post-heating. LiMn$_2$O$_4$phase which is produced by combustion reaction was decomposed back to Mn$_3$O$_4$because the reaction temperature was higher than 95$0^{\circ}C$. With increasing EG content, the homogeneity of LiMn$_2$O$_4$powder increased and specific surface area increased. And lithium evaporation during vacuum drying and/or ignition also increased.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.303.2-303.2
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• 2014

The oxides of group IV transition metals such as titanium, zirconium, hafnium have many important current and future application, including protective coatings, sensors and dielectric layers in thin film electroluminescent (TFEL) devices. Recently, group IV transition metal oxide films have been intensively investigated as replacements for SiO2. Due to high permittivities (k~14-25) compared with SiO2 (k~3.9), large band-gaps, large band offsets and high thermodynamic stability on silicon. Herein, we report the synthesis of new group IV transition metal complexes as useful precursors to deposit their oxide thin films using chemical vapor deposition technique. The complexes were characterized by FT-IR, 1H NMR, 13C NMR and thermogravimetric analysis (TGA). Newly synthesised compounds show high volatility and thermal stability, so we are trying to deposit metal oxide thin films using the complexes by Atomic Layer Deposition (ALD).

• Bulletin of the Korean Chemical Society
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• v.35 no.1
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• pp.141-146
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• 2014

A series of bimetallic Cu-Zn/$SiO_2$ catalysts were prepared via thermal decomposition of the as-synthesized $CuZn(OH)_4(H_2SiO_3)_2{\cdot}nH_2O$ hydroxides precursors. This highly dispersed Cu-solid base catalyst is extremely effective for hydrogenation of ethyl acetate to ethanol. The reduction and oxidation features of the precursors prepared by coprecipitation method and catalysts were extensively investigated by TGA, XRD, TPR and $N_2$-adsorption techniques. Catalytic activity by ethyl acetate hydrogenation of reaction temperatures between 120 and $300^{\circ}C$, different catalyst calcination and reduction temperatures, different Cu/Zn loadings have been examined extensively. The relation between the performance for hydrogenation of ethyl acetate and the structure of the Cu-solid base catalysts with Zn loading were discussed. The detected conversion of ethyl acetate reached 81.6% with a 93.8% selectivity of ethanol. This investigation of the Cu-Zn/$SiO_2$ catalyst provides a recently proposed pathway for ethyl acetate hydrogenation reaction to produce ethanol over Cu-solid base catalysts.

• Journal of Korean Vacuum Science & Technology
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• v.7 no.2
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• pp.33-38
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• 2003

Fluorinated amorphous carbon thin films (a-C:F) for the use of low dielectric constant intermetallic layer dielectrics are deposited by plasma enhanced chemical vapor deposition with $C_4$F$_{8}$ and Si$_2$H$_{6}$/He gas mixture as precursors. To characterize and improve film properties, we changed various conditions such as deposition temperature, and RF power, and we measured the thickness and refractive indexes and FT-IR spectrum before and after annealing. At low temperatures the film properties were very poor although the growth rate was very high. On the other hand, the growth rate was low at high temperature. The growth rate increased in accordance with the deposition pressure. The dielectric constants of samples were in the range of 1.5∼5.5∼5.

• Journal of the Korean Chemical Society
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• v.53 no.6
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• pp.677-682
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• 2009

ZnS:Mn/ZnS core-shell quantum dots (QDs), were synthesized via a thermal decomposition reaction of organometallic precursors in a hot solvent mixture. The synthetic conditions of the quantum dots were monitored at various reaction temperatures for the core formation, while the shell formation temperature was fixed at 135$^{\circ}C$. The obtained colloidal nanocrystals at corresponding temperatures were characterized by UV-Vis, solution photoluminescence (PL) spectroscopies, and further obtained powders were characterized by XRD, HR-TEM, and EDXS analyses. The synthetic temperature condition to obtain the best PL emission intensity for the core-shell QD was 135$^{\circ}C$, for both core and shell formation. At this temperature, solution PL spectrum showed a narrow emission peak at 583 nm with a relative PL quantum efficiency of 42.15%. In addition, the measured spherical particle sizes for the ZnS:Mn/ZnS nanocrystals via HR-TEM were in the range of 4.0 to 5.4 nm, while ellipsoidal particles were obtained at 150$^{\circ}C$.

• Journal of the Korean Ceramic Society
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• v.39 no.3
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• pp.321-326
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• 2002

ZnWO$_4$ nano-powders were successfully prepared by polymerized complex method using zinc nitrate and tungstic acid as starting materials. In order to investigate the thermal decomposition and crystallization process, the polymeric precursors were heat-treated at temperatures from 300 to 600$^{\circ}$C for 3 h, and the heat-treated powders were characterized by XRD and FTIR. The surface morphology of the heat-treated powders were observed using SEM and TEM. The crystallite size was measured by X-ray analysis. Crystallization of the ZnWO$_4$ powders were detected at 400$^{\circ}$C and entirely completed at a temperature of 600$^{\circ}$C. The particles heat-treated 400 and 500$^{\circ}$C showed primarily co-mixed morphology with spherical and silkworm-like forms, while the particles heat-treated at 600$^{\circ}$C showed more homogeneous morphology. The average crystalline size were 19.9∼24.nm showing an ordinary tendency to increase with the temperatures from 400 to 600$^{\circ}$C.

• Proceedings of the IEEK Conference
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• 1999.11a
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• pp.195-198
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• 1999

A Bi$_4$Ti$_3$O$_{12}$ (BIT) thin film is prepared by sol-gel method using acetate precursors and evaluated whether it could be applied to NVFRAM. The drying and the annealing temperature are 40$0^{\circ}C$ and $650^{\circ}C$, respectively and they are determined from the DT-TG analysis. The BIT thin film deposited on Pt/Ta/SiO$_2$/Si substrate shows orthorhombic perovskite phase. The grain size and the surface roughness are about 100 nm and 70.2$\AA$, respectively. The dielectric constant and the loss tangent at 10 KHz are 176 and 0.038, respectively, and the leakage current density at 100㎸/cm is 4.71$mutextrm{A}$/$\textrm{cm}^2$. In the results of hysteresis loops measured at $\pm$250㎸/cm, the remanent polarization (Pr) and the coercive field (Ec) are 5.92$mutextrm{A}$/$\textrm{cm}^2$ and 86.3㎸/cm, respectively. After applying 10$^{9}$ square pulses of $\pm$5V, the remanent polarization of the BIT thin film decreases as much as about 33% from 5.92 $\mu$C/$\textrm{cm}^2$ of initial state to 3.95 $\mu$C/$\textrm{cm}^2$.

• The Korean Journal of Ceramics
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• v.5 no.2
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• pp.131-136
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• 1999

Yttria stabilized zirconia(YSZ) films were deposited on porous NiO substrates and quartz plates by the thermal CVD using $ZrCl_4, YCl_3$ as precursors, and $O_2$ as a reactive gas at atmospheric pressure. The evaporation temperature of $ZrCl_4$ was varied from $250^{\circ}C$ to $550^{\circ}C$ while the temperatures of $YCl_3$ and the substrate were varied from $1000^{\circ}C$ to $1030^{\circ}C$. As the evaporation temperature of $ZrCl_4$ increased, the deposition rate of $ZrO_2$ decreased, contrary to our expectation. As a result of the decreased deposition rate of $ZrO_2$, the yttria content increase. The high evaporation temperature of $ZrCl_4$ makes the well-faceted crystal while the low evaporation temperature leads to the cauliflower-shaped structure. The dependence of the evaporation temperature on the growth rate and the morphological evolution was interpreted by the charged cluster model.