• 제목/요약/키워드: $C_2O_2H_4$

검색결과 5,465건 처리시간 0.036초

네자리 Schiff Base 리간드의 금속착물에 관한 연구 (Studies on the Metal Complexes with the Tetradentate Schiff Base Ligand)

  • 조기형;오상오;김찬호
    • 대한화학회지
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    • 제18권3호
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    • pp.194-201
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    • 1974
  • 네자리 schiff리간드는 salicylaldehyde와 m-phenylenediamine을 Duff-반응 시킴으로써 N,N-bis(salicylaldehyde)-m-phenylenediimine을 합성하고 이 리간드와 Cu(II), Ni(II), Co(II) 및 Zn(II) 이온들과의 새로운 착물 Cu(II)$[C_{20}H_{14}O_2N_2]{\cdot}2H_2O, Co(II)[C_{20}H_{14}O_2N_2]{\cdot}2H_2O$ 및 Zn(II)$[C_{20}H_{14}O_2N_2]{\cdot}4H_2O$들을 합성하였다. 이들 착물에 대하여 가시부 흡수스펙트럼, 적외선스펙트럼, TGA, X-ray 회절 및 원소분석 결과에 의하여 Cu(II), Ni(II) 및 Co(II) 착물들은 리간드와 금속이 1:1 몰비 및 2수화물의 6배위 착물로 주어지며 Zn(II) 착물은 1:2 몰비 4배위 착물로 주어짐을 알았다

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The Ir(PPh$_3)_2\;(CO)OClO_3\;and\;Ir(PPh_3)_3N_2Cl$ Mediated Activation of Aldehyde C-H Bonds via Chelate-Assisted Oxidative Addition

  • Ko, Jae-Jung;Joo, Wan-Chul;Kong, Young-Kun
    • Bulletin of the Korean Chemical Society
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    • 제7권5호
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    • pp.338-341
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    • 1986
  • Hydrocarbon solution of $Ir(PPh_3)_2(CO)OClO_3$ reacts with $Ph_2PC_6H_4$-o-CHO and 3-methyl-2-aminopyridinyl aldimine to yield ${\bar{Ir(Ph_2PC_6H_4-o-CO)}}\;(PPh_3)_2(CO)(H)ClO_4$(1) and ${\bar{Ir(NC_6H_6NC}}C_6H_5)(PPh_3)_2(CO)(H)ClO_4$(2), respectively. The compound $Ir(PPh_3)_2N_2Cl$ also reacts with $Ph_2PC_6H_4$-o-CHO and 3-methyl-2-aminopyridinyl aldimine to give ${\bar{Ir(Ph_2PC_6H_4-o-C}}O)(PPh_3)_2(H)Cl(3)$ and $Ir(NC_6H_5NCC_6H_5(PPh_3)_2(H)Cl(4)$, respectively. Compounds 1, 2, 3, and 4 were characterized by infrared, $^1H$ NMR, $^{31}p$ NMR, UV spectra, and conductivity measurements.

Metal Anion Polymerization에 관한 연구 (제3보). The Temperature Effect on Polymolybdate Ions Equilibrium in 1 M $NaClO_4$Solution (Studies on Polymerization of Metal Anion (III). The Temperature Effect on Polymolybdate Ions Equilibrium in 1 M $NaCIO_4$ Solution)

  • 안상운;박의서
    • 대한화학회지
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    • 제17권3호
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    • pp.145-153
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    • 1973
  • 1M $NaCIO_4$용액에서 다중몰리브덴산염 음이온 평형에 대한 온도의 영향을 20~50$^{\circ}$C온도 범위 내에서 고찰해 보았다. 이 온도 범위에서 생성된 다중몰리브덴산염 음이온은 평형 온도에 관계없이 헵타몰리브덴산염($Mo_7O_{24}^{-6}$) 이온과 헵타몰리브덴산염의 양성자화된 꼴($H_LMo_7O_{24}^{(6-L)-}$) 이었다. 실렌의 방법을 사용하여 계산한 헵타몰리브덴산염 형성에 대한 평형상수는 지적한 평형 온도에서 각각 다음과 같다. $8H^{+}+7MoO_4^{2-}=Mo_7O_{24}^{6-}+4H_2O$, $k_{7.8}=2.77{\times}10^{53}:20^{\circ}C= 9.29{\times}10^{51}:40^{\circ}C$,$k_{7.8}= 4.22{\times}10^{52}:30^{\circ}C = 9.29{\times}10^{51}:50^{\circ}C$ 위 반응에 대하여 반트호프 방정식을 이용하여 계산한 엔탈피 변화는 31.50kcal/mole이었다. 프로톤화헵타몰리브덴산염 이온 형성에 대한 평형상수 계산법을 유도하여 프로톤화헵타몰리브덴산염 형성에 대한 평형상수를 계산하였으며 그 결과는 다음과 같다.$ LH + Mo_7O_{24}^{-6} = H_LMo_7O_{24}^{(6-L)-} : L = 1\;or\;2$, $k_1 = 2.31{\times}10^4=2.53{\times}10^4=2.76{\times}10^4= 3.10{\times}10^4$, $k_2 = 6.19{\times}10^7\;20^{\circ}C = 7.80{\times}10^7\;30^{\circ}C = 1.22{\times}10^8\;40^{\circ}C = 2.03{\times}10^8\;50^{\circ}C$ 다음 단계 반응에 대하여 반트호프 방정식에 의하여 계산한 엔탈피 변화는 다음과 같다. $H^{+}+Mo_7O_{24}^{6-}= HMo_7O_{24}^{5-}\;{\Delta}H^{\circ}=1.900 kcal/mole$, $2H^{+}+Mo_7O_{24}^{6-}=H_2Mo_7O_{24}^{4-}\;{\Delta}H^{\circ}=7.500kcal/mole$

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디옥소몰리브덴 착물의 합성과 그 성질에 대한 연구 (Study on Formation and Properties of Dioxomolybdenum Complexes)

  • 오상오;구본권
    • 대한화학회지
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    • 제30권5호
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    • pp.441-448
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    • 1986
  • 몰리브덴산암모늄 수용액에서 적절한 살리실알데히드의 메탄올 혼합용액으로부터 디옥소비스(치환-살리실알데히다토) 몰리브덴늄(VI), $MoO_2(X-sal)_2(X=H,\;5-CH_3)$착물을 합성하고, 이들 각각의 화합물과 다양한 일차아민의 반응에 의하여 디옥소비스(치환-살리실알디미나토) 몰리브덴늄(VI)착물, $MoO_2(X-sal-N-R)_2,\;(R=C_6H_5,\;p-F-C_6H_4,\;m-Cl-C_6H_4,\;p-I-C_6H_4$$p-C_2H_5-C_6H_4)$을 합성하였다. 이들 착물은 모두 $900{\sim}940cm^{-1}$ 부근에서 ${\upsilon}_{Mo}=0$에 기인한 두 개의 강한 흡수띠가 관찰되었고, 핵자기공명스펙트럼에서 N=CH양성자에 대한 한 개의 시그날이 8.9ppm부근에서 나타났다. 이는 이들 착물이 $cis-MoO_2$기를 가진 6배위팔면체 착물임을 나타낸다. 질량분석의 결과로부터, $MoO_2$ : ligand의 결합비가 1:2임을 확인하였고, $MoO_2(5-CH_3-sal-N-R)_2$착물에 대한 분해과정을 조사하였다. 전자흡수스펙트럼에서 $N{\to}Mo$$O{\to}Mo$에 해당하는 전하이동전이는 $29,000cm^{-1}$$32,000cm^[-1}$부근에서 각각 일어났다. 한편, 디메틸포름아미드에서 측정한 이들 착물에 대한 몰전도도로부터 이들 착물이 비이온성 물질임을 확인하였다.

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Temperature and Concentration Dependencies of Chemical Equilibrium for Reductive Dissolution of Magnetite Using Oxalic Acid

  • Lee, Byung-Chul;Oh, Wonzin
    • 방사성폐기물학회지
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    • 제19권2호
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    • pp.187-196
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    • 2021
  • Chemical equilibrium calculations for multicomponent aqueous systems involving the reductive dissolution of magnetite (Fe3O4) with oxalic acid (H2C2O4) were performed using the HSC Chemistry® version 9. They were conducted with an aqueous solution model based on the Pitzer's approach of one molality aqueous solution. The change in the amounts and activity coefficients of species and ions involved in the reactions as well as the solution pH at equilibrium was calculated while changing the amounts of raw materials (Fe3O4 and H2C2O4) and the system temperature from 25℃ to 125℃. In particular, the conditions under which Fe3O4 is completely dissolved at high temperatures were determined by varying the raw amount of H2C2O4 and the temperature for a given raw amount of Fe3O4 fed into the aqueous solution. When the raw amount of H2C2O4 added was small for a given raw amount of Fe3O4, no undissolved Fe3O4 was present in the solution and the pH of the solution increased significantly. The formation of ferrous oxalate complex (FeC2O4) was observed. The equilibrium amount of FeC2O4 decreased as the raw amount of H2C2O4 increased.

습식방법에 의한 $SnO_2$ 반도체 가스센사 제조 (Preparation of $SnO_2$ Semiconducting Gas Sensor by Wet Process)

  • 전병식;김홍대;최병현;최성근
    • 한국세라믹학회지
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    • 제23권3호
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    • pp.53-61
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    • 1986
  • A gas sensor which has been made by wet process had fabricated by coating each of the mixture on alumina tube and firing at 85$0^{\circ}C$ for 3hrs. A gas concentration such $H_2$, CO, $C_3H_8$, $C_2H_2$ and $CH_4$ vs its detection voltage characteristics has been in-vestigated on $SnO_2-In_2O_3-MgO$ system doped with PdO, $La_2O_3$, $ThO_2$, NiO and $Nb_2O_5$ The optimum sensitivity composition for various gases were 90w/o $SnO_2$-9w/o $In_2O_3$-1w/o MgO for $H_2$, $C_2H_2$ CO and $C_3H_8$ and 95w/o $SnO_2$-4w/o $In_2O_3$-1w/o MgO for $CH_4$. The sample which has been made by wet process than dry process had predominated sensitivity for each gases and particle size of the sample coprecipitated with PH=9 was 0.1${\mu}{\textrm}{m}$ The $SnO_2$-In2_O_3-MgO$ system doped with 2w/o $Nb_2O_5$ and NiO was the most sensitive for $H_2$ and $C_2H_2$ gas. In $SnO_2$-In2_O_3-MgO$ system doped with $ThO_2$ the sensitivity of $H_2$ gas was decreased but CO gas was in-creased when dopant con was increased.

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졸-겔법에 의한 지르콘$(ZrSiO_4)$ 분말 합성 -재분쇄(Milling)에 대한 효과- (Synthesis of $(ZrSiO_4)$ Powders by the Sol-Gel Process -Effect of the Milling-)

  • 신용철;신대용;한상목;남인탁
    • 한국세라믹학회지
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    • 제32권7호
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    • pp.853-857
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    • 1995
  • ZrSiO4 powders were prepared from partially hydrolyzed solution of Si(OC2H5)4 and ZrOCl2.8H2O solution by the sol-gel method and formation rate of ZrSiO4 on the reaction parameter was investigated. In order to prepare homogeneous ZrSiO4 precursor gels, the H2O/Si(OC2H5)4 molar ratio of about 2, the pH of the ZrOCl2.8H2O solution fo about 4 and stirring time of the mixed solutions of about 2 hrs were appropriate. Formation of temperature of ZrSiO4 reduced about 15$0^{\circ}C$ by milling and formation of ZrSiO4 at 1300~135$0^{\circ}C$ showed an accelerative increase through the hedvall effect by silica.

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아데닌, 우라실, 시토신 및 말로네이트 배위자를 가진 팔라듐(II) 착물의 합성과 그 성질 (Synthesis and Characterization of Pd(II) Complexes with Adenine, Uracil, Cytosine and Malonate Ligands)

  • 오상오;모성종
    • 대한화학회지
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    • 제30권3호
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    • pp.320-326
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    • 1986
  • 몇몇 백금(II) 착물과 팔라듐(II) 착물에 잠재적인 항종양 활성이 있다고 보고 되었다. 그러나 백금(II) 착물들은 항종양제로서 독성이 있으므로 본 연구에서는 아데닌, 우라실, 시토신 및 말로네이트 배위자를 포함한 팔라듐(II) 착물에 관심을 가지고 합성하였다. 팔라듐(II)와 배위자와의 반응은 수용액 상태에서 연구하였으며, $[Pd(en)(C_5H_5N_5)_2](NO_3)_2,\;[Pd(en)(C_4H_3N_2O_2)Cl],\;[Pd(en)(C_4H_5N_3O)_2](NO_3)_2{\cdot}(C_4H_5N_3O)$$[Pd(en)(C_3H_2O_4)]$ 분자식의 형태로 분리하였다. 이들 화합물들은 원소분석 및 질량분석 및 질량분석으로부터 존재 원소의 함량과 분자식을 추정하였으며, 적외선 스펙트럼과 전자 스펙트럼으로부터 금속과 배위자의 결합 및 전자이동에 대해서 조사하였다.

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The Geometrical Isomerization on Acidification in Hexamolybdoheteropoly Oxometalate. The Crystal Structure of $(NH_{4})_{4.5}[H_{3.5}\alpha-PtMo_{6}O_{24}].\;1.5H_{2}O,\;(NH_{4})_{4}[H_{4}\beta-PtMo_{6}O_{24}].\;1.5H_{2}O,\;and\;K_{3.5}[H_{4.5}\alpha-PtMo_{6}O_{24}].\;3H_{2}O$

  • Lee, Uk;Yukiyoshi Sasaki
    • Bulletin of the Korean Chemical Society
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    • 제15권1호
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    • pp.37-45
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    • 1994
  • $(NH_4)_{4.5}[H_{3.5}{\alpha}-PtMo_6O_{24}]{\cdot}1.5\;H_2O(A),\;(NH_4)_4[H_4{\beta}-PtMo_6O_{24}]{\cdot}1.5\;H_2O(B),\;and\;K_{3.5}[H_{4.5}{\alpha}-PtMo_6O_{24}]{\cdot}3\;H_2O(C)$ have been synthesized and their molecular structures have been also determined by single-crystal X-ray diffraction technique. The space groups, unit cell parameters, and R factors are as follows: Compound A, monoclinic, $A_{2/a}$, a= 19.074 (3), b=21.490 (3), c=15.183 (2) ${\AA};\;{\beta}$=109.67 (1) ${\AA}$; z=8; R=0.075($IF_0I>4{\sigma}(IF_0I);$ Compound B, triclinic, P$bar{1}$, a=10.776 (2), b=15.174 (4), c=10.697 (3) ${\AA};\;{\alpha}$ =126.29 (2), ${\beta}$=111.55 (2), ${\gamma}$=93.18 (2) ${\AA}$; Z=2; R=0.046($IF_0I>3{\sigma}(IF_0I);$): Compound C, triclinic, Pl, a=12.426 (2), b=13.884 (2), c=10.089 (1) ${\AA}$; ${\alpha}$=102.59 (2), ${\beta}$=110.73 (1), ${\gamma}$=53.93 (1) ${\AA}$; Z=2; R=0.074 ($IF_0I>3{\sigma}(IF_0I)$. Compounds A and C contain the well-known Anderson structure (planar structure) heteropoly oxometalate having approximate $bar{3}_m(D_{3d})$ symmetry, while compound B contains the bent structure heteropoly oxometalate having appproximate $2_{mm}(C2_v)$ symmetry. The bent structure and the planar one are geometrical isomers. These compounds are rot only novel heteroply molybdates containing platinate(IV) but also the first example of geometrical isomerism in the hexamolybdoheteropoly oxometalates. That isomerization surprisingly occurred because of the change of only 0.5 non-acidic hydrogen atom attached to the polyanion such as $[H_{3.5}{\alpha} -PtMo_6O_{24}]^{4.5-}{\to}[H_4{\beta}-PtMo_6O_{24}]^{4-}{\to}[H_{4.5}{\alpha} -PtMo_6O_{24}]^{3.5-}$. It seems that the gradual protonation of the polyanion plays an important role in that isomerism. These heteropolyanions form dimers by strong hydrogen bonds between two heteropolyanions in the respective crystal system.

Electrical Characteristics of SiO2/4H-SiC Metal-oxide-semiconductor Capacitors with Low-temperature Atomic Layer Deposited SiO2

  • Jo, Yoo Jin;Moon, Jeong Hyun;Seok, Ogyun;Bahng, Wook;Park, Tae Joo;Ha, Min-Woo
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제17권2호
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    • pp.265-270
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    • 2017
  • 4H-SiC has attracted attention for high-power and high-temperature metal-oxide-semiconductor field-effect transistors (MOSFETs) for industrial and automotive applications. The gate oxide in the 4H-SiC MOS system is important for switching operations. Above $1000^{\circ}C$, thermal oxidation initiates $SiO_2$ layer formation on SiC; this is one advantage of 4H-SiC compared with other wide band-gap materials. However, if post-deposition annealing is not applied, thermally grown $SiO_2$ on 4H-SiC is limited by high oxide charges due to carbon clusters at the $SiC/SiO_2$ interface and near-interface states in $SiO_2$; this can be resolved via low-temperature deposition. In this study, low-temperature $SiO_2$ deposition on a Si substrate was optimized for $SiO_2/4H-SiC$ MOS capacitor fabrication; oxide formation proceeded without the need for post-deposition annealing. The $SiO_2/4H-SiC$ MOS capacitor samples demonstrated stable capacitance-voltage (C-V) characteristics, low voltage hysteresis, and a high breakdown field. Optimization of the treatment process is expected to further decrease the effective oxide charge density.