• Korean Chemical Engineering Research
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• 제49권4호
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• pp.498-504
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• 2011

본 연구는 폴리이미드와 폴리이서설폰 중공사막을 이용하여 매립가스의 메탄 회수를 위한 메탄과 질소에 대한 투과도와 선택도를 실험하였다. 폴리이미드와 폴리이서설폰 소재를 건/습식 상전이 법을 이용하여 중공사 형태로 제조하고 표면 실리콘 코팅 후 모듈을 제조하였다. 전자주사 현미경 관찰을 이용하여 제조된 중공사 막의 구조가 치밀한 표면과 망상구조의 비대칭으로 형성된 것을 확인하였다. 압력과 온도가 증가함에 따라 메탄과 질소의 투과도는 증가하였으나 선택도($CH_4/N_2$)는 감소하는 것으로 나타났다. Air gap이 증가할수록 메탄과 질소의 투과도는 감소하였으며 용매치환을 한 중공사막의 투과도는 3.2~7.0배 증가하였다.

• Journal of Industrial and Engineering Chemistry
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• 제67권
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• pp.156-163
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• 2018

High-performance mixed-matrix membranes that comprise both zeolitic imidazolate framework-8 (ZIF-8) and graphene oxide (GO) were synthesized with a solution casting technique to realize excellent $CO_2/CH_4$ separation. The incorporation of ZIF-8 nanocrystals alone in ODPA-TMPDA polyimide can be used to significantly enhance $CO_2$ permeability compared with that of pure ODPA-TMPDA. Meanwhile, the addition of a GO nanostack alone in ODPA-TMPDA contributes to improved $CO_2/CH_4$ selectivity. Hence, a composite membrane that contains both fillers displays significant enhancements in $CO_2$ permeability (up to 60%) and $CO_2/CH_4$ selectivity (up to 28%) compared with those of pure polymeric membrane. Furthermore, in contrast to the ZIF-8 mixed-matrix membrane, which showed decreased mechanical stability, it was found that the incorporation of GO could improve the mechanical strength of mixed-matrix membranes. Overall, the synergistic effects of the use of both fillers together are successfully demonstrated in this paper. Such significant improvements in the mixed-matrix membrane's $CO_2/CH_4$ separation performance and mechanical strength suggest a feasible and effective approach for potential biogas upgrading and natural gas purification.

• 멤브레인
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• 제24권3호
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• pp.185-193
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• 2014

고무상 고분자인 PDMS (polydimethylsiloxane)에 HNT (halloysite nanotube)의 함량을 5, 10, 20, 30 wt%로 달리하여 PDMS-HNT 복합막을 제조하고, FT-IR, XRD, TGA, SEM에 의해서 막의 특성을 조사하였다. 기체투과 실험은 $25^{\circ}C$, $3kg/cm^2$ 조건에서 수행하였고, PDMS-HNT 복합막의 HNT 함량 변화에 따른 $H_2$, $N_2$, $CH_4$, $CO_2$들의 기체투과도와 선택도를 조사하였다. $H_2$, $N_2$, $CH_4$, $CO_2$의 투과기체에 대해 HNT 함량이 0~30 wt% 범위에서 HNT 함량이 증가할수록 기체들의 투과도는 전체적으로 감소하는 경향을 보였다. 선택도($CO_2/N_2$)는 14~44의 값을 보였고, 선택도($CO_2/CH_4$)는 3.0~7.7의 값을 보였다.

• Bulletin of the Korean Chemical Society
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• 제27권2호
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• pp.315-318
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• 2006

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.132-132
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• 2010

In the nano-scale Si processing, patterning processes based on multilevel resist structures becoming more critical due to continuously decreasing resist thickness and feature size. In particular, highly selective etching of the first dielectric layer with resist patterns are great importance. In this work, process window for the infinitely high etch selectivity of silicon oxynitride (SiON) layers and silicon nitride (Si3N4) with EUV resist was investigated during etching of SiON/EUV resist and Si3N4/EUV resist in a CH2F2/N2/Ar dual-frequency superimposed capacitive coupled plasma (DFS-CCP) by varying the process parameters, such as the CH2F2 and N2 flow ratio and low-frequency source power (PLF). It was found that the CH2F2/N2 flow ratio was found to play a critical role in determining the process window for ultra high etch selectivity, due to the differences in change of the degree of polymerization on SiON, Si3N4, and EUV resist. Control of N2 flow ratio gave the possibility of obtaining the ultra high etch selectivity by keeping the steady-state hydrofluorocarbon layer thickness thin on the SiON and Si3N4 surface due to effective formation of HCN etch by-products and, in turn, in continuous SiON and Si3N4 etching, while the hydrofluorocarbon layer is deposited on the EUV resist surface.

• 분석과학
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• 제16권4호
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• pp.333-338
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• 2003

Inclusion selectivity of a three-dimensional piperazine-ligated cyanocadmate host complex, $[Cd_x(CN)_{2x}\{HN(CH_2CH_2)_2NH\}_y]{\cdot}zG$, has been investigated for benzene (B), toluene (T), ethylbenzene (E), o- (O), m- (M), and p-xylene (P) isomers as the aromatic guest molecules. From the binary, ternary and quarternary guest mixtures of E and xylene isomer (X), the order of inclusion selectivity in the host complex is O>E>P>M. From the binary to quinary BTX mixtures, the order of preference in the complex is seen to be B>T>O${\gg}$P>M.

• 대한환경공학회지
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• 제27권6호
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• pp.614-619
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• 2005

[ $CO_2$ ]와 $CH_4$의 혼합가스로부터 $CO_2$를 선택적으로 분리, 회수하기 위하여 비표면적과 기공구조가 다른 일련의 활성탄소섬유에 벤젠을 CVD하여 기공 크기를 조절하였다. 벤젠 증착 온도 및 증착 시간을 변화시켜 제조한 ACF 분자체의 흡착 선택도를 $CO_2$와 $CH_4$의 흡착을 통해 측정하였으며, 그 기공구조를 질소흡착에 의한 흡착등온선으로부터 조사하였다. 열분해로 생성된 탄소는 활성탄소 섬유의 기공 크기를 크게 변화시켰으며, 벤젠 CVD에 의해 제조된 ACF 분자체는 $CH_4$의 흡착량을 크게 감소시키며 $CO_2$에 대해 우수한 흡착선택도를 보여주었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.210-210
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• 2011

The effects of CH2F2 and N2 gas flow rates on the etch selectivity of silicon nitride (Si3N4) layers to extreme ultra-violet (EUV) resist and the variation of the line edge roughness (LER) of the EUV resist and Si3N4 pattern were investigated during etching of a Si3N4/EUV resist structure in dual-frequency superimposed CH2F2/N2/Ar capacitive coupled plasmas (DFS-CCP). The flow rates of CH2F2 and N2 gases played a critical role in determining the process window for ultra-high etch selectivity of Si3N4/EUV resist due to disproportionate changes in the degree of polymerization on the Si3N4 and EUV resist surfaces. Increasing the CH2F2 flow rate resulted in a smaller steady state CHxFy thickness on the Si3N4 and, in turn, enhanced the Si3N4 etch rate due to enhanced SiF4 formation, while a CHxFy layer was deposited on the EUV resist surface protecting the resist under certain N2 flow conditions. The LER values of the etched resist tended to increase at higher CH2F2 flow rates compared to the lower CH2F2 flow rates that resulted from the increased degree of polymerization.

• Carbon letters
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• 제8권1호
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• pp.12-16
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• 2007

Molecular sieving carbon (MSC) for separating $O_2-N_2$ and $CO_2-CH_4$ has been prepared through chemical vapor deposition (CVD) of methane and benzene on activated carbon spheres (ACS) derived from polystyrene sulfonate beads. The validity of the material for assessment of molecular sieving behavior for $O_2-N_2$ and $CO_2-CH_4$ pair of gases was assessed by the kinetic adsorption of the corresponding gases at $25^{\circ}C$. It was observed that methane cracking on ACS lead to deposition of carbon mostly in whole length of pores rather than in pore entrance, resulting in a reduction in adsorption capacity. MSC showing good selectivity for $CO_2-CH_4$ and $O_2-N_2$ separation was obtained through benzene cracking on ACS with benzene entrantment of $0.40{\times}10^{-4}\;g/ml$ at cracking temperature of $725^{\circ}C$ for a period of 90 minutes resulting in a selectivity of 3.31:1.00 for $O_2-N_2$ and 8.00:1.00 for $CO_2-CH_4$ pair of gases respectively.

• 멤브레인
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• 제16권2호
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• pp.123-132
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• 2006

PTMSP-silica-PEI 복합막이 PTMSP에 TEOS를 가하여 졸-겔 방법에 의해 제조되었다. 복합막의 특성은 $^1H-NMR$, FT-IR, TGA, XPS, SEM, GPC 등을 사용하여 조사하였고, 복합막의 기체투과 특성을 알아보기 위해 $H_2,\;O_2,\;N_2,\;CO_2,\;CH_4$를 사용하였다. PTMSP-silica-PEI 복합막의 기체 투과도는 TEOS의 함량이 증가함에 따라 증가하였다. $H_2$와 $CH_4$는 15 wt% TEOS에서 PTMSP-PEI 복합막보다 투과도와 선택도가 모두 증가하였다. 한편 $O_2$와 $CO_2$는 선택도의 감소없이 투과도가 증가하는 경향을 나타냈다.