• Nuclear Engineering and Technology
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• 제53권6호
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• pp.1796-1809
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• 2021

The subchannel of a research reactor used to generate high power density is designed to be narrow and rectangular and comprises plate-type fuels operating under downward flow conditions. Critical heat flux (CHF) is a crucial parameter for estimating the safety of a nuclear fuel; hence, this parameter should be accurately predicted. Here, machine learning is applied for the prediction of CHF in a narrow rectangular channel. Although machine learning can effectively analyze large amounts of complex data, its application to CHF, particularly for narrow rectangular channels, remains challenging because of the limited flow conditions available in existing experimental databases. To resolve this problem, we used four CHF correlations to generate pseudo-data for training an artificial neural network. We also propose a network architecture that includes pre-training and prediction stages to predict and analyze the CHF. The trained neural network predicted the CHF with an average error of 3.65% and a root-mean-square error of 17.17% for the test pseudo-data; the respective errors of 0.9% and 26.4% for the experimental data were not considered during training. Finally, machine learning was applied to quantitatively investigate the parametric effect on the CHF in narrow rectangular channels under downward flow conditions.

• 한국전기전자재료학회논문지
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• 제23권12호
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• pp.915-918
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• 2010

In this work, the etching characteristics of ZnO thin films were investigated using an inductively coupled plasma(ICP) of HBr/Ar/$CHF_3$ gas mixtures. The plasma characteristics were analyzed by a quadrupole mass spectrometer (QMS) and double langmuir probe (DLP). The surface reaction of the ZnO thin films was investigated using X-ray photoelectron spectroscopy (XPS). The etch rate of ZnO was measured as a function of the $CHF_3$ mixing ratio in the range of 0-15% in an HBr:Ar=5:2 plasma at a fixed gas pressure (6mTorr), input power (700 W), bias power (200 W) and total gas flow rate(50sccm). The etch rate of the ZnO films decreased with increasing $CHF_3$ fraction due to the etch-blocking polymer layer formation.

• 대한기계학회논문집B
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• 제33권11호
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• pp.840-848
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• 2009

In the boiling heat transfer mechanism, CHF(critical heat flux) is the significantly important parameter of the system. So, many researchers have been struggling to enhance the CHF of the system in enormous methods. Recently, there were lots of researches about enormous CHF enhancement with the nanofluids. In that, the pool boiling CHF in nanofluids has the significantly increased value compared to that in pure water because of the deposition of the nanoparticle on the heater surface in the nanofluids. The aim of this study is the comparison of the effect of the nanoparticle deposited surface and the modified surface which has the similar morphology and made by MEMS fabrication. The nanoparticle deposited surface has the complex structures in nano-micro scale. Therefore, we fabricated the surfaces which has the similar wettability and coated with the micro size post and nano structure. The experiment is performed in 3 cases : the bare surface with 0.002% water-ZnO nanofluids, the nanoparticle deposited surface with pure water and the new fabricated surface with pure water. The contact angle, a representative parameter of the wettability, of the all 3 cases has the similar value about 0 and the SEM(scanning electron microscope) images of the surfaces show the complex nano-micro structure. From the pool boiling experiment of the each case, the nanoparticle deposited surface with pure water and the fabricated surface with pure water has the almost same CHF value. In other words, the CHF enhancement of the nanoparticle deposited surface is the surface effect. It also shows that the new fabricated surface follows the nanoparticle deposited surface well.

• E2M - 전기 전자와 첨단 소재
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• 제8권6호
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• pp.774-779
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• 1995

Process optimization experiments based on the Taguchi method were performed in order to set up the optimal process conditions for the contact oxide etching process module which was built in order to be attached to the cluster system of multi-processing purpose. In order to compare with Taguchi method, the contact oxide etching process carried out with different process parameters(CHF$_{3}$/CF$_{4}$ gas flow rate, chamber pressure, RF power and magnetic field intensity). Optimal etching characteristics were evaluated in terms of etch rate, selectivity, uniformity and etched profile. In this paper, as a final analysis of experimental results the optimal etching characteristics were obtained at the process conditions of CHF3/CF4 gas flow rate = 72/8 sccm, chamber pressure = 50 mTorr, RF power = 500 watts, and magnetic field intensity = 90 gauss.

• 청정기술
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• 제7권3호
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• pp.203-214
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• 2001

플라즈마를 발생시키는 반응기체의 종류에 따라 실리콘 산화막 세정에 어떠한 영향을 미치는지에 대해 연구하였다. 압력 (100 mTorr), 전력 (300 W, 500 W), 전극간 거리 (5, 8, 11.5 cm), 세정시간 (90초, 180초), 가스유량 (50sccm) 등의 변수들을 고정시키고 $CHF_3$, $CF_4$, 아르곤, 산소 등의 세정가스를 변화시키며 세정성능을 비교하였다. 세정결과 아르곤 플라즈마는 단지 물리적인 스퍼터링 효과만으로 세정속도가 느렸다. 산소 플라즈마는 5cm 전극거리, 300W, 180초 세정시 좋은 세정효과를 내었으나, 표면거칠기가 증가하였다. $CF_4$ 플라즈마의 경우 가장 좋은 세정효과를 얻었다. $CHF_3$ 플라즈마는 CFx/F의 비율을 낮출 수 있는 첨가기체가 필요함을 알 수 있었다. $CHF_3$에 아르곤을 첨가하였을 경우에는 원활한 세정효과를 얻을 수 없었으나, 산소를 첨가하였을 경우 좋은 세정효과를 얻을 수 있었다.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2001년도 춘계학술대회논문집D
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• pp.189-194
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• 2001

A simultaneous visualization of the behavior of bubbles and dry spots has been carried out for pool boiling of R-1l3 on a horizontal heater. From video imaging and image processing analysis, the formation of bubbles and dry spots occurs simultaneously, and therefore they should be considered as a synchronized concept rather than independent identities. The dry spot density is equivalent to the active site density in the region before CHF. At CHF point, large dry areas due to the coalescence of neighboring dry areas cover the heater surface.

• 한국원자력학회:학술대회논문집
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• 한국원자력학회 2004년도 요약집 춘계학술발표대회
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• pp.95.1-95.1
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• 2004

• Nuclear Engineering and Technology
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• 제43권3호
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• pp.195-204
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• 2011

The effects on pool boiling heat transfer of aqueous solutions of boric acid ($H_3BO_3$) and sodium chloride (NaCl) as working fluids have been studied. Borated and NaCl water were prepared by dissolving 0.5~5% volume concentration of boric acid and NaCl in distilled-deionized water. The pool boiling tests were conducted using $1{\times}1\;cm^2$ flat heaters at 1 atm. The critical heat flux (CHF) dramatically increased compared to boiling pure water. At the end of boiling tests it was observed that particles of boric acid and NaCl had deposited and formed a coating on the heater surface. The CHF enhancement and surface modification during boiling tests were very similar to those obtained from boiling with nanofluids. Additional experiments were carried out to investigate the reliability of the additives deposition in pure water. The boric acid and NaCl coatings disappeared after repeated boiling tests on the same surface due to the soluble nature of the coatings, thus CHF enhancement no longer existed. These results demonstrate that not only insoluble nanoparticles but also soluble salts can be deposited during boiling process and the deposited layer is solely responsible for significant CHF enhancement.

• 한국재료학회:학술대회논문집
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• 한국재료학회 1993년도 춘계학술발표회
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• pp.45-45
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• 1993

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 1999년도 추계학술발표회 초록집
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• pp.59-59
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• 1999

In this study, planer inductively coupled $Cl_2$ based plasmas were used to etch InGaN and the effects of plasma conditions on the InGaN etch properties have been characterized using quadrupole mass spectrometry(QMS) and optical emission spectroscopy(OES). As process conditions used to study the effects of plasma characteristics on the InGaN etch properties, $Cl_2$ was used as the main etch gas and $CHF_3,{\;}CH_4$, and Ar were used as additive gases. Operational pressure was varied from SmTorr to 3OmTorr, inductive power and bias voltage were varied from 400W to 800W and -50V to -250V, respectively while the substrate temperature was fixed at 50 centigrade. For the $Cl_2$ plasmas, selective etching of GaN to InGaN was obtained regardless of plasma conditions. The small addition of $CHF_3$ or Ar to $Cl_2$ and the decrease of pressure generally increased InGaN etch rates. The selective etching of InGaN to GaN could be obtained by the reduction of pressure to l5mTorr in $CI_2/IO%CHF_3{\;}or{\;}CI_2/IO%Ar$ plasma. The enhancement of InGaN etch rates was related to the ion bombardment for $CI_2/Ar$ plasmas and the formation of $CH_x$ radicals for $CI_2/CHF_3(CH_4)$ plasmas.