Electrical & Electronic Materials (E2M - 전기 전자와 첨단 소재)
- Volume 8 Issue 6
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- Pages.774-779
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- 1995
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- 2982-6268(pISSN)
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- 2982-6306(eISSN)
Contact oxide etching using $CHF_3/CF_4$
$CHF_3/CF_4$ 를 사용한 콘택 산화막 식각
Abstract
Process optimization experiments based on the Taguchi method were performed in order to set up the optimal process conditions for the contact oxide etching process module which was built in order to be attached to the cluster system of multi-processing purpose. In order to compare with Taguchi method, the contact oxide etching process carried out with different process parameters(CHF
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