• 제목/요약/키워드: $BaCeO_3$ effect

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TFA-MOD공정에서 $BaCeO_3$ 첨가에 의한 $YBa_2Cu_3O_{7-\delta}$ 박막의 임계전류밀도 증가 (Enhancement of critical current density in $BaCeO_3$ doped $YBa_2Cu_3O_{7-\delta}$ thin Films deposited by TFA-MOD process)

  • 이종범;김병주;이희균;홍계원
    • 한국초전도ㆍ저온공학회논문지
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    • 제10권1호
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    • pp.1-5
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    • 2008
  • The effect of $BaCeO_3$ doping on the critical current density of YBCO film by TFA-MOD method was studied. $BaCeO_3$ doping was made by two method; one is direct addition of $BaCeO_3$ nano-sized powder prepared by citrate process followed by grinding with planetary ball mill for 10 hours. Another is addition of Ba-Ce precursor solution prepared with Ba-acetate and Ce acetate dissolved in TFA to the YBCO-TFA precursor solution. The film was made by standard dip coating and heat treatment process with conversion temperature of $790^{\circ}C$ in 1000 ppm oxygen containing moisturized Ar gas atmosphere. The direct addition of $BaCeO_3$ powder resulted in YBCO film with good epitaxial growth and no evidence of second phase formation. The addition through precursor solution resulted in the increase of critical current density upto 30 at% doping and uniform dispersion of $BaCeO_3$ fine inclusion was confirmed by SEM-EDX.

고상법을 이용한 Y3Al5O12:Ce3+의 제조에서 BaF2가 미치는 영향 (Effect of BaF2 as a Flux in Solid State Synthesis of Y3Al5O12:Ce3+)

  • 원형석;;원창환;원형일
    • 한국재료학회지
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    • 제21권11호
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    • pp.604-610
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    • 2011
  • The effect of $BaF_2$ flux in $Y_3Al_5O_{12}:Ce^{3+}$(YAG:Ce) formation was investigated. Phase transformation of $Y_3Al_5O_{12}$(YAG) was characterized by using XRD, SEM, and TEM-EDS, and it was revealed that the sequential formation of the $Y_4Al_2O_9$(YAM), $YAlO_3$(YAP) and $Y_3Al_5O_{12}$(YAG) in the temperature range of 1000-1500$^{\circ}C$. Single phase of YAG was revealed from 1300$^{\circ}C$. In order to find out the effect of $BaF_2$ flux, three modeling experiments between starting materials (1.5$Al_2O_3$-2.5$Y_2O_3$, $Y_2O_3$-$BaF_2$, and $Al_2O_3$-$BaF_2$) were done. These modeling experiments showed that the nucleation process occurs via the dissolution-precipitation mechanism, whereas the grain growth process is controlled via the liquid-phase diffusion route. YAG:Ce phosphor particles prepared using a proposed technique exhibit a spherical shape, high crystallinity, and an emission intensity. According to the experimental results conducted in this investigation, 5% of $BaF_2$ was the best concentration for physical, chemical and optical properties of $Y_3Al_5O_{12}:Ce^{3+}$(YAG:Ce) that is approximately 10-15% greater than that of commercial phosphor powder.

준용응법으로 제조한 Y-Ba-Cu-O 초전도체에서 Ce$O_2$첨가에 따른 초전도성 (Superconductivity of Ce$O_2$-added Y-Ba-Cu-0 Superconductors Prepared by Partial Melt Process)

  • 김찬중;김기백;이규원;원동연
    • 한국재료학회지
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    • 제2권3호
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    • pp.202-206
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    • 1992
  • $CeO_2$를 첨가한 Y-Ba-Cu-0 초전도체를 포정반응을 포함한 준용용법으로 제조하여 미세조직과 초전도성을 관찰하였다. 첨가한 $CeO_2$는 포정반응중에 $BaCeO_3$로 변화하였으며, 이 $BaCeO_3$는 방향성 성장한 1-2-3 초전도상의 기지에 미세하게 분산된다. 초전도체의 $T_{c}$는 첨가된 $CeO_2$함량에 관계없이 90K 이상으로 매우 높았다. 이는 준용융공정을 적용함으로서 제2상물질을 초전도상으로부터 분리할 수 있었기 때문으로 사료된다.

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Effect of Metal Oxide on the Superconductivity of YBCO

  • Lee, Sang-Heon
    • 한국분말야금학회:학술대회논문집
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    • 한국분말야금학회 2006년도 Extended Abstracts of 2006 POWDER METALLURGY World Congress Part2
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    • pp.1241-1242
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    • 2006
  • Electromagnetic properties of $CeO_2$ doped and undoped YBaCuO superconductors were evaluated to investigate the effect of pinning center on the magnetization and magnetic shielding. The variation $\DeltaM$ with doping was maximum for 3% doping and decrease with further doping. The magnetic shielding was evaluated by measuring the induced voltage in secondary coil and the voltage initially set to 0.5V, decreased to 0.17V and 0.28V respectively for the undoped and 3% $CeO_2$ doped sample. The much less change in the induced voltage for the 3% doped sample is attributed to the increased flux shielding by shielding vortex current. The $CeO_2$ was converted to fine $BaCeO_3$ particles which were trapped in YBaCuO superconductor during the reaction sintering. The trapped fine particles, $BaCeO_3$ may be acted as a flux pinning center.

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$CeO_2$의 상전이에 따른 YBCO 박막의 결정성 및 특성의 변화 (Effect of buffer layer on YBCO film deposited on Hastelloy substrate)

  • 김성민;이상렬
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1999년도 추계학술대회 논문집 학회본부 C
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    • pp.873-875
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    • 1999
  • We have fabricated good quality superconducting $YBa_{2}Cu_{3}O_{7-\delta}$ thin films on Hastelloy(Ni-Cr-Mo alloys) metallic substrate with $CeO_2$ and $BaTiO_3$ buffer layers in-situ by pulsed laser deposition in a multi-target processing chamber. We have chosen $CeO_2$ as a buffer layer which has cubic structure of $5.41{\AA}$ lattice parameter and only 0.2% of lattice mismatch with YBCO. $CeO_2$ layer may be helpful for power transmission due to its conducting property. In order to enhance the crystallization of YBCO films on metallic substrates. we deposited $CeO_2$ and $BaTiO_3$ buffer layers at various temperatures. The YBCO superconducting tape fabricated with $BaTiO_3$ and $CeO_2$ buffer layers shows 85K of transition temperature and about $8.4{\times}10^4A/cm^2$ of critical current density at 77K.

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CeO2 완충층의 결정성장 특성 및 금속 유기물 증착법으로 제조된 초전도 YBCO층에 미치는 영향 (Texture Development of CeO2 Buffer Layer and its Effect on Superconducting MOD-YBCO Films)

  • 정국채;김영국
    • 대한금속재료학회지
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    • 제47권10호
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    • pp.681-685
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    • 2009
  • $CeO_2$ buffer layers have been deposited on YSZ single crystal substrates via a radio-frequency sputtering method. We focused on the texture development of $CeO_2$ with out-of-plane alignment and its effects on a superconducting YBCO layer, which was deposited by metal organic deposition. $CeO_2$ layers were grown epitaxially on single crystal YSZ substrates and subsequent YBCO layers were also grown epitaxially from $CeO_2$ layers. It was observed that the intensity of $CeO_2$(200) decreased with deposition temperature. ${\theta}-2{\theta}$ scan FWHM values of $CeO_2$(200) were inversely proportional to the peak intensities of $CeO_2$(200). The sample with the lowest $CeO_2$(200) intensity and poor out-of-plane alignment showed a strong reaction with the MOD-YBCO layer resulting in a thicker $BaCeO_3$ layer. The texture and superconducting property of the YBCO layer were affected indirectly by the formation of a $BaCeO_3$ layer at the interface between the $CeO_2$ and YBCO layers.

Suppression of the surface nucleation of YBa$_2$Cu$_3$O$_7-y$ by CeO$_2$ coating of the top-seeded melt processed YBCO superconductors

  • Kim, Ho-Jin;Jun, Byung-Hyuk;Kim, Chan-Joong
    • 한국초전도ㆍ저온공학회논문지
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    • 제5권3호
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    • pp.1-5
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    • 2003
  • The effect of CeO$_2$ coating on the surface nucleation of the top-seeded melt-growth processed YBCO superconductors was studied. It was effective that the coating of Y123 compact surfaces by CeO$_2$ powder suppressed the undesirable subsidiary YBa$_2$Cu$_3$O$_{7-y}$ (Y123) nucleation during melt processing. BaCeO$_3$ was formed in the CeO$_2$-coated layers, which might cause a CuO-excessive liquid at the partial melt stage of $Y_2$BaCuO$_{5}$(Y211) plus liquid, and thus the Y123 nucleation at the YBCO compact surfaces could be suppressed during the melt growth of Y123 grain. In addition, the CeO$_2$ refined the Y211 particles near the compact / coating interface. While the levitation forces of the top surfaces with and without CeO$_2$ coating were similar to each other, the levitation force of the interior of the CeO$_2$ coated sample was higher than that of the interior of the sample without CeO$_2$ coating, which was attributed to the suppression of subsidiary Y123 nucleation at the compact walls.s.s.

RF 마그네트론 스퍼터링법으로 성장시킨 0.5% Ce-doped Ba(Zr0.2Ti0.8)O3 (BCZT) 박막의 열처리 특성분석 (Characterization of the Annealing Effect of 0.5 % Ce-doped Ba(Zr0.2Ti0.8)O3 Thin Films Grown by Rf Magnetron Sputtering Method)

  • 최원석;박용섭;이준신;홍병유
    • 한국전기전자재료학회논문지
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    • 제16권5호
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    • pp.361-364
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    • 2003
  • It was investigated that the structural and electrical Properties of Ce-doped Ba(Zr$_{x}$Ti$_{1-x}$ )O$_3$ (BCZT) thin films with a mole fraction of x=0.2 and a thickness about 100 nm. BCZT films were prepared on Pt/Ti/SiO$_2$/Si substrate by a RF magnetron sputtering system. We have measured the thickness profile with Ar/O$_2$ ratio and the surface roughness. It was observed that the oxygen gas, which introduced during the film deposition, have an influence on the roughness of the film and the film roughness was reduced by annealing from 2.33 nm to 2.02 nm (RMS at 500 $^{\circ}C$, Ar:6 sccm, $O_2$:6 sccm). It was found that annealing procedure after top electrode deposit can reduce the dissipation factor.