• 광물과 암석
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• 제35권4호
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• pp.469-484
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• 2022

장군 연-아연 광상은 남한의 4대(연화 광상, 신예미 광상, 울진 광상) 연-아연 광상중의 하나이었다. 이 광상 지질은 선캠브리아기의 원남층, 율리층군, 캠브리안기내지 오도비스기의 장산규암층, 두음리층, 장군 석회암층, 석탄기내지 이엽기의 동수곡층, 재산층, 쥐라기의 동화지층 및 이들을 관입한 중생대의 춘양화강암류로 구성된다. 이 연-아연 광상은 고생대 캠브리안기내지 오도비스기의 장군석회암층에 배태되는 열수교대형 광상에 해당된다. 이 광상의 연-아연 광화작용과 관련된 모암변질작용은 주로 능망간석화작용과 돌로마이트화 작용이 관찰되나 황철석화작용, 견운모화작용 및 녹니석화작용 등도 관찰된다. 모암변질작용은 연-아연 광체 에서 모암으로 감에 따라 연-아연 광체 -> 능망간석대 -> 돌로마이트대 -> 돌로마이트질 석회암대 -> 석회암 및 돌로마이트 대리암 변화된다. 백색운모는 모암변질대(능망간석화작용과 돌로마이트화작용)에서 Ca-돌로마이트, Ferroan ankerite, sideroplesite, 금홍석, 인회석, 유비철석, 황철석, 섬아연석, 방연석, 석영, 녹니석 및 방해석 등과 함께 중립내지 세립질 입단으로 산출된다. 이 백색운모의 화학조성은(K_0.77-0.62Na_0.03-0.00Ca_0.03-0.00Ba_0.00Sr_0.01)_0.82-0.64(Al_1.72-1.48Mg_0.48-0.20Fe_0.04-0.01Mn_0.03-0.00Ti_0.01-0.00Cr_{0.00As0.01-0.00}Co_0.03-0.00Zn_0.03-0.00Pb_0.05-0.00Ni_0.01-0.00)_2.07-1.92 (Si_3.43-3.33Al_0.67-0.57)_4.00O₁₀(OH_1.94-1.80F_0.20-0.06)_2.00로써 이론적인 이중팔면체형 운모류 값보다 Si가 높고 K, Na, Ca는 낮다. 또한 장군 연-아연 광상, 연화1 연-아연 광상 및 백전 금-은 광상의 모암변질대와 구문소일대 석회암에서 산출되는 백색운모는 백운모와 팬자이트에 해당되나 둔전 금-은 광상의 모암변질대에서 산출되는 백색운모는 백운모에 해당된다. 더불어 이들 광상의 모암변질대 및 구문소일대 석회암에서 산출되는 백색운모의 화학조성 변화는 주로 팬자이틱 또는 Tschermark 치환 메카니즘(장군 연-아연 광상), 주로 팬자이틱 또는 Tschermark 치환과 일부 illitic 치환 메카니즘(연화1 연-아연 광상, 둔전 금-은 광상, 백전 금-은 광상) 및 주로 팬자이틱 또는 Tschermark 치환과 일부 illitic 치환 및 Na⁺ <-> K⁺ 치환 메카니즘(구문소일대)에 의해 일어났음을 알 수 있다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.5-5
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• 2009

Thin-film-transistors (TFTs) that can be prepared at low temperatures have attracted much attention because of the great potential for transparent and flexible electronics. One of the mainstreams in this field is the use of organic semiconductors such as pentacene. But device performance of the organic TFTs is still limited due to low field-effect mobility and rapid degradation after exposing to air. Alternative approach is the use of amorphous oxide semiconductors as a channel. Amorphous oxide semiconductors (AOSs) based TFTs showed the fast technological development, because AOS films can be fabricated at room temperature and exhibit the possibility in application like flexible display, electronic paper, and larges solar cells. Among the various AOSs, a-IGZO has lots of advantages because it has high channel mobility, uniform surface roughness and good transparency. [1] The high mobility is attributed to the overlap of spherical s-orbital of the heavy post-transition metal cations. This study demonstrated the effect of the variation in channel thickness from 30nm to 200nm on the TFT device performance. When the thickness was increased, turn-on voltage and subthreshold swing was decreased. The a-IGZO channels and source/drain metals were deposited with shadow mask. The a-IGZO channel layer was deposited on $SiO_2$/p-Si substrates by RF magnetron sputtering, where RF power is 150W. And working pressure is 3m Torr, at $O_2/Ar$ (2/28 sccm) atmosphere. The electrodes were formed with electron-beam evaporated Ti (30 nm) and Au (70 nm) bilayer. Finally, Al (150nm) as a gate metal was thermal-evaporated. TFT devices were heat-treated in a furnace at 250 $^{\circ}C$ and nitrogen atmosphere for 1hour. The electrical properties of the TFTs were measured using a probe-station. The TFT with channel thickness of 150nm exhibits a good subthreshold swing (SS) of 0.72 V/decade and on-off ratio of $1{\times}10^8$. The field effect mobility and threshold voltage were evaluated as 7.2 and 8 V, respectively.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.287.1-287.1
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• 2016

Three-dimensional (3-D) semiconductor nanoarchitectures, including nano- and micro- rods, pyramids, and disks, are emerging as one of the most promising elements for future optoelectronic devices. Since these 3-D semiconductor nanoarchitectures have many interesting unconventional properties, including the use of large light-emitting surface area and semipolar/nonpolar nano- or micro-facets, numerous studies reported on novel device applications of these 3-D nanoarchitectures. In particular, 3-D nanoarchitecture devices can have noticeably different current spreading characteristics compared with conventional thin film devices, due to their elaborate 3-D geometry. Utilizing this feature in a highly controlled manner, color-tunable light-emitting diodes (LEDs) were demonstrated by controlling the spatial distribution of current density over the multifaceted GaN LEDs. Meanwhile, for the fabrication of high brightness, single color emitting LEDs or laser diodes, uniform and high density of electrical current must be injected into the entire active layers of the nanoarchitecture devices. Here, we report on a new device structure to inject uniform and high density of electrical current through the 3-D semiconductor nanoarchitecture LEDs using metal core inside microtube LEDs. In this work, we report the fabrications and characteristics of metal-cored coaxial $GaN/In_xGa_{1-x}N$ microtube LEDs. For the fabrication of metal-cored microtube LEDs, $GaN/In_xGa_{1-x}N/ZnO$ coaxial microtube LED arrays grown on an n-GaN/c-Al2O3 substrate were lifted-off from the substrate by wet chemical etching of sacrificial ZnO microtubes and $SiO_2$ layer. The chemically lifted-off layer of LEDs were then stamped upside down on another supporting substrates. Subsequently, Ti/Au and indium tin oxide were deposited on the inner shells of microtubes, forming n-type electrodes of the metal-cored LEDs. The device characteristics were investigated measuring electroluminescence and current-voltage characteristic curves and analyzed by computational modeling of current spreading characteristics.

• 센서학회지
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• 제22권2호
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• pp.130-135
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• 2013

This study proposed a noble process to fabricate TSV (Through Silicon Via) structure which has lower cost, shorter production time, and more simple fabrication process than plating method. In order to produce the via holes, the Si wafer was etched by a DRIE (Deep Reactive Ion Etching) process. The via hole was $100{\mu}m$ in diameter and $400{\mu}m$ in depth. A dielectric layer of $SiO_2$ was formed by thermal oxidation on the front side wafer and via hole side wall. An adhesion layer of Ti and a seed layer of Au were deposited. Soldering process was applied to fill the via holes with solder paste and metal powder. When the solder paste was used as via hole metal line, sintering state and electrical properties were excellent. However, electrical connection was poor due to occurrence of many voids. In the case of metal powder, voids were reduced but sintering state and electrical properties were bad. We tried the via hole filling process by using mixing solder paste and metal powder. As a consequence, it was confirmed that mixing rate of solder paste (4) : metal powder (3) was excellent electrical characteristics.

• 대한금속재료학회지
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• 제49권5호
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• pp.388-394
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• 2011

High speed copper filling into TSV (through-silicon-via) for three dimensional stacking of Si chips was investigated. For this study, a tapered via was prepared on a Si wafer by the DRIE (deep reactive ion etching) process. The via had a diameter of 37${\mu}m$ at the via opening, and 32${\mu}m$ at the via bottom, respectively and a depth of 70${\mu}m$. $SiO_2$, Ti, and Au layers were coated as functional layers on the via wall. In order to increase the filling ratio of Cu into the via, a PPR (periodic pulse reverse) wave current was applied to the Si chip during electroplating, and a PR (pulse reverse) wave current was applied for comparison. After Cu filling, the cross sections of the vias was observed by FE-SEM (field emission scanning electron microscopy). The experimental results show that the tapered via was filled to 100% at -5.85 mA/$cm^2$ for 60 min of plating by PPR wave current. The filling ratio into the tapered via by the PPR current was 2.5 times higher than that of a straight via by PR current. The tapered via by the PPR electroplating process was confirmed to be effective to fill the TSV in a short time.

• 자원환경지질
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• 제42권3호
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• pp.177-193
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• 2009

삼광광상은 선캠브리아기 경기육괴의 화강편마암내에 발달된 단열대(NE, NW)를 따라 충진한 8개의 괴상맥으로 구성된 중열수 석영맥광상이다. 이 광상의 광화작용은 여러번의 단열작용에 의해 형성된 두시기의 석영+방해석시기(광화I시기)와 방해석시기(광화II시기)로 구성된다. 광화I시기의 열수작용에 의한 변질작용은 견운모화, 녹니석화, 탄산염화, 황철석화, 규화, 및 점토화작용등이 관찰되며 견운모대는 석영맥과 접촉한 부분에서 녹니석대는 석영맥으로부터 멀어짐에 따라 관찰된다. 견운모대의 모암변질광물은 대부분이 견운모 및 석영이며 일부 일라이트, 탄산염광물, 녹니석으로 구성된다. 녹니석대의 모암변질광물은 주로 녹니석, 석영과 소량 견운모, 탄산염광물 및 녹염석으로 구성된다. 견운모의 Fe/(Fe+Mg) 값은 0.45${\sim}$0.50(0.48$\pm$0.02)이며 백운모-펜자이트족에 해당되고 녹니석의 Fe/(Fe+Mg) 값은 0.74${\sim}$0.81(0.77$\pm$0.03)이고 대부분 브런스비자이트에 해당된다. 견운모와 녹니석에 대한 $Al_{IV}$-FE/(FE+Mg)의 다이어그램은 변질시 같은 광종의 견운모와 녹니석의 형성온도를 나타내는 지시자로써 유용하다. 이것은 계산된 녹니석 단종의 활동도가 $a3(Fe_5Al_2Si_3O_{10}(OH)_6$=0.0275${\sim}$0.0413, $a2(Mg_5Al_2Si_3O_{10}(OH)_6$=1.18E-10${\sim}$7.79E-7, $a1(Mg_6Si_4O_{10}(OH)_6$=4.92E-10${\sim}$9.29E-7로서 삼광광상의 녹니석은 iron-rich 녹니석으로 비교적 고온 (T>450$^{\circ}C$에서 모암과 평형상태에서 온도가 감소함에 따라 형성되었음을 알 수 있다. 모암변질시 ${\alpha}Na^+$, ${\alpha}K^+$, ${\alpha}Ca^{2+}$ 및 ${\alpha}Mg^{2+}$는 각각 ${\alpha}Na^+$=0.0476($400^{\circ}C$), 0.0863($350^{\circ}C$), ${\alpha}K^+$=0.0154($400^{\circ}C$), 0.0231($350^{\circ}C$), ${\alpha}Ca^{2+}$=2.42E-11($400^{\circ}C$), 7.07E-10($350^{\circ}C$), ${\alpha}Mg^{2+}$=1.59E-12($400^{\circ}C$), 1.77E-11($350^{\circ}C$)이며 열수용액의 pH는 5.4${\sim}$6.4($400^{\circ}C$), 5.3${\sim}$5.7($350^{\circ}C$)로서 모암변질시 열수용액는 약산성이었음을 알 수 있다. 모암변질시 이득원소(부화원소)는 $TiO_2$, $Fe_2O_3(T)$,CaO, MnO, MgO, As, Ag, Cu, Zn, Ni, Co, W, V, Br, Cs, Rb, Sc, Bi, Nb, Sb, Se, Sn 및 Lu 등이며 특히 대부분의 광상에서 Ag, As, Zn, Sc, Sb, S,$CO_2$ 등의 원소가 현저하게 증가하므로 중열수 및 천열수 금-은광상의 탐사에 지시원소로서 활용될 수 있을 것이다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.176-177
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• 2013

Surface plasmon polaritons (SPPs) have attracted the attention of scientists and engineers involved in a wide area of research, microscopy, diagnostics and sensing. SPPs are waves that propagate along the surface of a conductor, usually metals. These are essentially light waves that are trapped on the surface because of their interaction with the free electrons of conductor. In this interaction, the free electrons respond collectively by oscillating in resonance with the light wave. The resonant interaction between the surface charge oscillation and the electromagnetic field of the light constitutes the SPPs and gives rise to its unique properties. In this papers, we studied theoretical and experimental extraordinary transmittance (T) and reflectance (R) of 2 dimensional metal hole array (2D-MHA) on GaAs in consideration of the diffraction orders. The 2d-MHAs was fabricated using ultra-violet photolithography, electron-beam evaporation and standard lift-off process with pitches ranging from 1.8 to $3.2{\mu}m$ and diameter of half of pitch, and was deposited 5-nm thick layer of titanium (Ti) as an adhesion layer and 50-nm thick layer of gold (Au) on the semiinsulating GaAs substrate. We employed both the commercial software (CST Microwave Studio: Computer Simulation Technology GmbH, Darmstadt, Germany) based on a finite integration technique (FIT) and a rigorous coupled wave analysis (RCWA) to calculate transmittance and reflectance. The transmittance was measured at a normal incident, and the reflectance was measured at variable incident angle of range between $30^{\circ}{\sim}80^{\circ}$ with a Nicolet Fourier transmission infrared (FTIR) spectrometer with a KBr beam splitter and a MCT detector. For MHAs of pitch (P), the peaks ${\lambda}$ max in the normal incidence transmittance spectra can be indentified approximately from SP dispersion relation, that is frequency-dependent SP wave vector (ksp). Shown in Fig. 1 is the transmission of P=2.2 um sample at normal incidence. We attribute the observation to be a result of FTIR system may be able to collect the transmitted light with higher diffraction order than 0th order. This is confirmed by calculations: for the MHAs, diffraction efficiency in (0, 0) diffracted orders is lower than in the (${\pm}x$, ${\pm}y$) diffracted orders. To further investigate the result, we calculated the angular dependent transmission of P=2.2 um sample (Fig. 2). The incident angle varies from 30o to 70o with a 10o increment. We also found the splitting character on reflectance measurement. The splitting effect is considered a results of SPPs assisted diffraction process by oblique incidence.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.489.2-489.2
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• 2014

The planar type flexible piezoelectric energy harvesters (PEH) based on PbZr0.52Ti0.48O3 (PZT) thin films on the flexible substrates are demonstrated to convert mechanical energy to electrical energy. The planar type energy harvesters have been realized, which have an electrode pair on the PZT thin films. The PZT thin films were deposited on double side polished sapphire substrates using conventional RF-magnetron sputtering. The PZT thin films on the sapphire substrates were transferred by PDMS stamp with laser lift-off (LLO) process. KrF excimer laser (wavelength: 248nm) were used for the LLO process. The PDMS stamp was attached to the top of the PZT thin films and the excimer laser induced onto back side of the sapphire substrate to detach the thin films. The detached thin films on the PDMS stamp transferred to adhesive layer coated on the flexible polyimide substrate. Structural properties of the PZT thin films were characterized using X-ray diffraction (XRD) and scanning electron microscopy (SEM). To measure piezoelectric power generation characteristics, Au/Cr inter digital electrode (IDE) was formed on the PZT thin films using the e-beam evaporation. The ferroelectric and piezoelectric properties were measured by a ferroelectric test system (Precision Premier-II) and piezoelectric force microscopy (PFM), respectively. The output signals of the flexible PEHs were evaluated by electrometer (6517A, Keithley). In the result, the transferred PZT thin films showed the ferroelectric and piezoelectric characteristics without electrical degradation and the fabricated flexible PEHs generated an AC-type output power electrical energy during periodically bending and releasing motion. We expect that the flexible PEHs based on laser transferred PZT thin film is able to be applied on self-powered electronic devices in wireless sensor networks technologies. Also, it has a lot of potential for high performance flexible piezoelectric energy harvester.

• 대한치과보철학회지
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• 제35권3호
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• pp.566-576
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• 1997

This study was performed to evaluate the tensile strength of solder joint in titanium and the wettability of 14K gold solder on titanium. Two pieces of titanium rod 30 mm in length and 3mm in diameter were butt-soldered with a 14K gold solder using the electric resistance heating under flux-argon atmosphere, the infrared heating under argon atmosphere, and the infrared heating under vacuum-argon atmosphere. A tensile test was performed at a crosshead speed of 0.5 mm/min, and fracture surfaces were examined by SEM. To evaluate the wettability of 14K gold solder on titanium, titanum plates of a $17{\times}17{\times}1mm$ were polished with #80-#2000 emery papers, and the spreading areas of solder 10 mg were measured by heating at 840 * for 60 seconds. The solder-matrix interface regions were etched by the solution of 10% KCN-10% (NH4)2S2O8, and analyzed by EPMA. The results obtained were summarized as follows ; 1. The maximum tensile strength was obtained when the titanium surface was polished with #2000 emery paper and soldered using the electric resistance heating under flux-argon atmosphere. Soldering strengths showed the significant difference between the electric resistance heating and the infrared heating(p<0.05). 3. The fracture surfaces showed the aspect of brittle fracture, and the failure developed along the interfaces of solder-matrix reaction zone. 4. The EPMA data for the solder-matrix interface region revealed that the diffusion of Au and Cu occurred to the titanium matrix, and the reaction zone showed the higher contents of Au, Cu and Ti than others.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.137-137
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• 2009

Thin-film transistors (TFTs) that can be prepared at low temperatures have attracted much attention due to the great potential for flexible electronics. One of the mainstreams in this field is the use of organic semiconductors such as pentacene. But device performance of the organic TFTs is still limited by low field effect mobility or rapidly degraded after exposing to air in many cases. Another approach is amorphous oxide semiconductors. Amorphous oxide semiconductors (AOSs) have exactly attracted considerable attention because AOSs were fabricated at room temperature and used lots of application such as flexible display, electronic paper, large solar cells. Among the various AOSs, a-IGZO was considerable material because it has high mobility and uniform surface and good transparent. The high mobility is attributed to the result of the overlap of spherical s-orbital of the heavy pest-transition metal cations. This study is demonstrated the effect of thickness channel layer from 30nm to 200nm. when the thickness was increased, turn on voltage and subthreshold swing were decreased. a-IGZO TFTs have used a shadow mask to deposit channel and source/drain(S/D). a-IGZO were deposited on SiO2 wafer by rf magnetron sputtering. using power is 150W, working pressure is 3m Torr, and an O2/Ar(2/28 SCCM) atmosphere at room temperature. The electrodes were formed with Electron-beam evaporated Ti(30nm) and Au(70nm) structure. Finally, Al(150nm) as a gate metal was evaporated. TFT devices were heat treated in a furnace at $250^{\circ}C$ in nitrogen atmosphere for an hour. The electrical properties of the TFTs were measured using a probe-station to measure I-V characteristic. TFT whose thickness was 150nm exhibits a good subthreshold swing(S) of 0.72 V/decade and high on-off ratio of 1E+08. Field effect mobility, saturation effect mobility, and threshold voltage were evaluated 7.2, 5.8, 8V respectively.