• Title/Summary/Keyword: $Au@TiO_2$

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The composition analysis of Danchung pigments at Geunjeongjeon Hall in Gyeongbokgung Palace (경복궁 근정전 단청안료의 성분분석)

  • Cho, Nam-Chul;Moon, Whan-Suk;Hong, Jong-Ouk;Hwang, Jin-Ju
    • 보존과학연구
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    • s.22
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    • pp.93-114
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    • 2001
  • The composition analysis of Danchung pigments at Geunjeongjeon Hall in Gyeongbokgung Palace were carried out by FXRF and MXRD. The analytical result of the inside pigments at Geunjeongjeon showed that these painted in use the mineral pigments. Gold pigment was pure gold(Au).The main composition identified in green pigments were chalcanthite($CuSO_4$.$5H_2O$) and celadonite($K(Mg, Fe, Al)_2$.$(Si, Al)_4O_10(OH)_2$ ). Red pigments werecinnnabar(HgS).The analytical result of the outside pigments at Geunjeongjeon revealed that these applied to the artificial synthetic pigment. Yellow pigment was chromeyellow($PbCrO_4$). The main composition identified in red pigments were red lead($Pb_3O_4$)and hematite($Fe_2O_3$). Green pigments were emeral green($C_2H_3A_s3Cu_2O_8$) and chromegreen($Cr_2O_3$). Blue pigment was lazurite($Na_6Ca2Al_6Si_6O_24(SO_4)_2$), titanium dioxide($TiO_2$) of white pigment.

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Reflow of Sn Solder Bumps using Rapid Thermal Annealing(RTA) method and Intermetallic Formation (급속 열처리 방법에 의한 Sn 솔더 범프의 리플로와 금속간 화합물 형성)

  • Yang, Ju-Heon;Cho, Hae-Young;Kim, Young-Ho
    • Journal of the Microelectronics and Packaging Society
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    • v.15 no.4
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    • pp.1-7
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    • 2008
  • We studied a growth behavior of Intermetallic compounds(IMCs) during solder bumping with two reflow methods. Ti(50 nm), Cu($1{\mu}m$), Au(50 nm) and Ti(50 nm) thin films were deposited on $SiO_2$/Si wafer using the DC magnetron sputtering system as the under bump metallization(UBM). And the $5{\mu}m$ thick Cu bumps and $20{\mu}m$ thick Sn bumps were fabricated on UBM by electroplating. Sn bumps were reflowed in RTA(Rapid Thermal Annealing) system and convection reflow oven. When RTA system was used, reflow was possible without using flux and IMC thickness formed in the solder interface was thinner than that of a convectional method.

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Occurrence and Chemical Composition of White Mica and Ankerite from Laminated Quartz Vein of Samgwang Au-Ag Deposit, Republic of Korea (삼광 금-은 광상의 엽리상 석영맥에서 산출되는 백색운모와 철백운석의 산상 및 화학조성)

  • Yoo, Bong Chul
    • Korean Journal of Mineralogy and Petrology
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    • v.33 no.1
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    • pp.53-64
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    • 2020
  • The Samgwang deposit has been one of the largest deposits in Korea. The deposit consists of series of host rocks including Precambrian metasedimentary rocks and Jurassic Baegunsa formation, which unconformably overlies the Precambrian metasedimentary rocks. The deposit consists of eight lens-shaped quartz veins which filled fractures along fault zones in Precambrian metasedimentary rock, which feature suggest that it is an orogenic-type deposit. Laminated quartz veins are common in the deposit which contain minerals including quartz, ankerite, white mica, chlorite, apatite, rutile, arsenopyrite, sphalerite, chalcopyrite and galena. The structural formulars of white micas from laminated quartz vein and wallrock alteration are determined to be (K1.02-0.82Na0.02-0.00Ca0.00)(Al1.73-1.58Mg0.26-0.16Fe0.23-0.10Mn0.00Ti0.03-0.01Cr0.01-0.00)(Si3.35-3.22Al0.79-0.65)O10(OH)2 and (K0.75-0.67Na0.01Ca0.00) (Al1.78-1.74Mg0.16-0.15Fe0.15-0.13Mn0.00Ti0.04-0.02Cr0.01-0.00)(Si3.33-3.26Al0.74-0.67)O10(OH)2, respectively. It suggest that white mica from laminated quartz vein has higher interlayer cation (K+Na+Ca) and Fe+Mg+Mn+Ti content in octahedral site compared to the white mica from the wallrock alteration. Compositional variations in white mica from laminated quartz vein can be caused by phengitic or Tschermark substitution ((Al3+)VI+(Al3+)IV <-> (Fe2+ or Mg2+)VI)+(Si4+)IV) and (Fe3+)VI <-> (Al3+)VI substitution. Ankerite from laminated quartz vein has compositional variations of FeO and MgO contents along crystal growth direction. The geochemical and textural features suggest that laminated quartz vein from the Samgwang gold-silver deposit was formed during ductile shear stage, which is an important main gold-silver ore-forming event in orogeinc deposit.

Speedy Two-Step Thermal Evaporation Process for Gold Electrode in a Perovskite Solar Cell

  • Kim, Kwangbae;Park, Taeyeul;Song, Ohsung
    • Korean Journal of Materials Research
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    • v.28 no.4
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    • pp.235-240
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    • 2018
  • We propose a speedy two-step deposit process to form an Au electrode on hole transport layer(HTL) without any damage using a general thermal evaporator in a perovskite solar cell(PSC). An Au electrode with a thickness of 70 nm was prepared with one-step and two-step processes using a general thermal evaporator with a 30 cm source-substrate distance and $6.0{\times}10^{-6}$ torr vacuum. The one-step process deposits the Au film with the desirable thickness through a source power of 60 and 100 W at a time. The two-step process deposits a 7 nm-thick buffer layer with source power of 60, 70, and 80 W, and then deposits the remaining film thickness at higher source power of 80, 90, and 100 W. The photovoltaic properties and microstructure of these PSC devices with a glass/FTO/$TiO_2$/perovskite/HTL/Au electrode were measured by a solar simulator and field emission scanning electron microscope. The one-step process showed a low depo-temperature of $88.5^{\circ}C$ with a long deposition time of 90 minutes at 60 W. It showed a high depo-temperature of $135.4^{\circ}C$ with a short deposition time of 8 minutes at 100 W. All the samples showed an ECE lower than 2.8 % due to damage on the HTL. The two-step process offered an ECE higher than 6.25 % without HTL damage through a deposition temperature lower than $88^{\circ}C$ and a short deposition time within 20 minutes in general. Therefore, the proposed two-step process is favorable to produce an Au electrode layer for the PSC device with a general thermal evaporator.

CO Gas Sensing Characteristic of ZnO Thin Film/Nanowire Based on p-type 4H-SiC Substrate at 300℃ (P형 4H-SiC 기판에 형성된 ZnO 박막/나노선 가스 센서의 300℃에서 CO 가스 감지 특성)

  • Kim, Ik-Ju;Oh, Byung-Hoon;Lee, Jung-Ho;Koo, Sang-Mo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.25 no.2
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    • pp.91-95
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    • 2012
  • ZnO thin films were deposited on p-type 4H-SiC substrate by pulsed laser deposition. ZnO nanowires were formed on p-type 4H-SiC substrate by furnace. Ti/Au electrodes were deposited on ZnO thin film/SiC and ZnO nanowire/SiC structures, respectively. Structural and crystallographical properties of the fabricated ZnO thin film/SiC and ZnO nanowire/SiC structures were investigated by field emission scanning electron microscope and X-ray diffraction. In this work, resistance and sensitivity of ZnO thin film/SiC gas sensor and ZnO nanowire/SiC gas sensor were measured at $300^{\circ}C$ with various CO gas concentrations (0%, 90%, 70%, and 50%). Resistance of gas sensor decreases at CO gas atmosphere. Sensitivity of ZnO nanowire/SiC gas sensor is twice as big as sensitivity of ZnO thin film/SiC gas sensor.

Fabrication and Characterization of the BLT/STA/Si Structure for Fe-FETs Application

  • Park, Kwang-Huna;Jeon, Ho-Seung;Park, Jun-Seo;Im, Jong-Hyun;Park, Byung-Eun;Kim, Chul-Ju
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.11a
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    • pp.73-74
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    • 2006
  • Ferroelectric thin films have been widely investigated for future nonvolatile memory application. We fabricated the BLT ($(Bi,La)_4Ti_3O_{12}$) films on Si using a STA ($SrTa_2O_6$) buffer layer BLT and STA film were prepared by sol-gel method. Measurement data by XRD and AFM, showed that BLT film and STA films were well crystallized and a good surface morphology. From C-V measurement reward that the Au/BLT/STA/Si structure showed a clockwise hysteresis loop with a memory window of 1.5 V for the bias voltage sweep of ${\pm}5$ V. From results, the Au/BLT/STA/Si structure is useful for FeFETs.

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Ti:LiNbO3 three-waveguide type traveling-wave optical modulator; outer fed, anti-symmetrical Detuning (Ti:LiNbO3 세 도파로형 진행파 광변조기;바깥입사, 반대칭 Detuning)

  • 이우진;정은주;피중호;김창민
    • Korean Journal of Optics and Photonics
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    • v.15 no.4
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    • pp.375-384
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    • 2004
  • Switching phenomenon of a three-waveguide optical coupler was analyzed by using the coupled mode theory, and the coupling-length of the device was calculated by means of the FDM. CPW traveling-wave electrodes were designed by the CMM and SOR simulation techniques so as to satisfy the conditions of phase-velocity and impedance matching. Traveling-wave modulators were fabricated on a z-cut LiNbO$_3$ substrate. Ti was in-diffused in LiNbO$_3$ to make waveguides and Au electrodes were built on the waveguides by the electroplating technique. Insertion loss and switching voltage of the optical modulator were about 4 ㏈ and 15.6V. Network analyzer was used to obtain S parameters and corresponding RF response. From the measurement, parameters of the traveling-wave electrodes were extracted as such Z$_{c}$=39.2 $\Omega$, Neff=2.48, and a0=0.0665/cm((GHz) (1/2)). The measured optical response R(w) was compared with the theoretically estimated and both responses were shown to agree well. The measurement results revealed that the ㏈ bandwidth turned out to be about 13 GHz.

수열합성법에 의해 성장된 ZnO 나노와이어의 성장제어 및 특성연구

  • Kim, Jong-Hyeon;Kim, Seong-Hyeon;Jo, Jin-U;Lee, Seong-Hwa;Jeong, Dae-Yong
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2011.05a
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    • pp.35.1-35.1
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    • 2011
  • 수열합성법으로 제작된 ZnO 나노와이어는 저온 MBE (Molecular Beam Epitaxy) 방식과 달리 Ti, Au와 같은 촉매로 부터 성장이 끝난뒤 나노와이어 끝에 남는 촉매를 제거해야할 필요가 없으며, 저온에서 합성이 가능하기 때문에 현재 연구가 많이 되고 있는 방법중에 하나이다. 본 연구에서는 수열 합성법을 이용하여 금속촉매 또는 AZO로 seed를 형성한 후 기판 위에 균일한 크기의 ZnO 나노막대를 성장시키고 성장밀도 및 길이의 간편한 제어를 하였다. 이를 위해 계면활성제인 PEI (Polyethyleneimine) 첨가 및 Chloride ($Cl_-$)를 조절하여 ZnO 나노와어의 성장밀도를 조절 하고자 하였다. 실험방법으로는 전구체인 Zn(NO3)2${\cdot}$6H2O와 HMT에 Chloride 계열인 Ammonium chloride 와 Kcl 의 몰농도를 각각 조절하고 PEI를 첨가하여, ZnO 나노와이어를 성장하였다. 성장된 ZnO 나노와이어의 특성을 평가하기 위해 field emission scanning electron microscopy (FE-SEM)을 이용하여 광학적인 특성을 측정하였으며, 결정성을 조사하기 위해 X-ray diffraction (XRD)을 이용하여 분석하였다. 또한 scanning PL 장비를 통해 photoluminescence양을 측정하고 ZnO 나노와이어의 응용 가능성을 평가하였다.

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Occurrence and Chemical Composition of White Mica and Chlorite from Laminated Quartz Vein of Unsan Au Deposit (운산 금 광상의 엽리상 석영맥에서 산출되는 백색운모와 녹니석의 산상 및 화학조성)

  • Yoo, Bong Chul
    • Korean Journal of Mineralogy and Petrology
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    • v.34 no.1
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    • pp.1-14
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    • 2021
  • The Unsang gold deposit has been one of the three largest deposits (Daeyudong, Kwangyang) in Korea. The geology of this deposit consists of series of host rocks including Precambrian metasedimentary rock and Jurassic Porphyritic granite. The deposit consists of Au-bearing quartz veins which filled fractures along fault zones in Precambrian metasedimentary rock and Jurassic Porphyritic granite, which suggests that it is an orogenic-type deposit. Quartz veins are classified as 1) galena-quartz vein type, 2) pyrrhotite-quartz vein type, 3) pyrite-quartz vein type, 4) pegmatic quartz vein type, 5) muscovite-quartz vein type and 6) simple quartz vein type based on mineral assembles. The studied quartz vein is pyrite-quartz vein type which occurs as sericitization, chloritization and silicification. The white mica from stylolitic seams of laminated quartz vein occurs as fine or medium aggregate associated with white quartz, pyrite, chlorite, rutile, monazite, apatite, K-feldspar, zircon and calcite. The structural formular of white mica from laminated quartz vein is (K0.98-0.86Na0.02-0.00Ca0.01-0.00Ba0.01-0.00 Sr0.00)1.00-0.88(Al1.70-1.57Mg0.22-0.09Fe0.23-0.10Mn0.00Ti0.04-0.02Cr0.01-0.00V0.00Ni0.00)2.06-1.95 (Si3.38-3.17Al0.83-0.62)4.00O10(OH2.00-1.91F0.09-0.00)2.00. It indicated that white mica of laminated quartz vein has less K, Na and Ca, and more Si than theoretical dioctahedral micas. Compositional variations in white mica from laminated quartz vein are caused by phengitic or Tschermark substitution [(Al3+)VI+(Al3+)IV <-> (Fe2+ or Mg2+)VI+(Si4+)IV] and direct (Fe3+)VI <-> (Al3+)VI substitution. The structural formular of chlorite from laminated quartz vein is((Mg1.11-0.80Fe3.69-3.14Mn0.01-0.00Zn0.01-0.00K0.07-0.01Na0.01-0.00Ca0.04-0.01Al1.66-1.09)5.75-5.69 (Si3.49-2.96Al1.04-0.51)4.00O10 (OH)8. It indicated that chlorite of laminated quartz vein has more Si than theoretical chlorite. Compositional variations in chlorite from laminated quartz vein are caused by phengitic or Tschermark substitution (Al3+,VI+Al3+,IV <-> (Fe2+ or Mg2+)VI+(Si4+)IV) and octahedral Fe2+ <-> Mg2+ (Mn2+) substitution. Therefore, laminated quartz vein and alteration minerals of the Unsan Au deposit was formed during ductile shear stage of orogeny.

Micro Mass detection devices for Bio-Chip based on PZT Thick Film Cantilever (PZT 후막 캔틸레버를 이용한 바이오칩용 미세 무게 감지 소자)

  • Kim, Hyung-Joon;Kim, Yong-Bum;Choi, Ki-Yong;Kang, Ji-Yoon;Kim, Tae-Song
    • Proceedings of the KIEE Conference
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    • 2002.07c
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    • pp.1988-1990
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    • 2002
  • 마이크로 바이오칩용 미세 무게 감지 소자를 개발하기 위해 통상적인 MEMS 공정에 PZT sol solution을 함침하여 binder로서 적용하는 복합적인 스크린 인쇄 방법을 적용해 $800-850^{\circ}C}$의 비교적 저온에서 높은 소결밀도와 우수한 전기적인 특성을 가지는 PZT-0.12PCW 후막 구동형 캔틸레버 소자를 Pt/$TiO_2$/YSZ/$SiO_2$/Si 기판에 제조하였다. 제조된 PZT-0.12PCW 후막 구동형 캔틸레버 소자의 공진 주파수와 변위를 레이저 미소 변위 측정 시스템을 이용하여 공기 중 및 액체 중에서 측정함으로써 캔틸레버 크기에 따른 공진 특성 변화, 액체 내에서의 댐핑 효과 등을 분석할 수 있었다. 또한 Au를 증착하거나biotin-streptoavidin 반응을 통해 단백질을 고정화시켜 무게변화를 야기시킨 후 소자의 감도를 평가함으로써 PZT-0.12PCW 후막 구동형 캔틸레버를 우수한 성능의 바이오칩용 미세 무게 감지 소자로 응용할 수 있음을 알 수 있었다.

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