• Progress in Superconductivity and Cryogenics
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• v.23 no.2
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• pp.1-5
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• 2021

We have investigated the electrical transport properties of polycrystalline tantalum nitride (TaN_x) films. Various compositions of tantalum (nitride) thin films have been deposited on SiO₂ substrates by reactive DC magnetron sputtering while changing the ratio of nitrogen partial pressure. The substrate temperature was maintained at 283 K during deposition. X-ray diffraction analyses indicated the presence of α-Ta and β-Ta phases in the Ta film deposited in pure argon atmosphere, while fcc-TaN_x phases appeared in the sputtering gas mixture of argon and nitrogen. The N/Ta atomic ratio in the film increased ranging from 0.36 to 1.07 for nitrogen partial pressure from 7 to 20.7%. The superconducting transition temperatures of the TaN_x thin films were measured to be greater than 3.86 K with a maximum of 5.34 K. The electrical resistivity of TaN_x thin film was in the range of 177-577 𝜇Ωcm and increased with an increase in nitrogen content. The upper critical filed at zero temperature for a TaN_0.87 thin film was estimated to exceed 11.3 T, while it showed the lowest T_c = 3.86 K among the measured superconducting TaN_x thin films. We try to explain the behavior of the increase of the residual resistivity and the upper critical field for TaN_x thin films with the nitrogen content by using the combined role of the intergrain Coulomb effect and disorder effect by grain boundaries.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.12 no.1
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• pp.62-68
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• 1999

Ferroelectric $Sr_{0.7}/B_{2.3}(Ta_{1-x}Nb_x)_2O_9$(x=0, 0.1, 0.2, 0.3) thin films were deposited on $Pt/SiO_2/Si$ substrate by MOD(Metalorganic Decomposition) process. Metal carboxylate and metal alkoxide were used as precursors, and 2-methoxyethanol, xylene as solvents. After spin coating, thin films were pre-annealed at $400^{\circ}C$, followed by RTA(Rapid Thermal Annealing) and final annealing at $800^{\circ}C$ in oxygen atmosphere. These procedures were repeated three times to obtain thin films with the thickness of $2000{\AA}$. To enhance the nucleation and growth of layered-perovskite phase, thin films were rapid-thermally annealed above $720^{\circ}C$ in oxygen atmosphere. As RTA temperature increased, fluorite phase was transformed to layered-perovskite phase. And the change of Nb contents affected dielectric / electrical properties and microstructure. The ferroelectric characteristics of $Sr_{0.7}/B_{2.3}(Ta_{1-x}Nb_x)_2O_9$ thin film were Pr=8.67 $\mu{C}/cm^2$, Ec=62.4kV/cm and $I_{L}=1.4\times10^{-7}A/cm^2$ at the applied voltage of 5V, respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 1997.02a
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• pp.144-145
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• 1997

• Journal of the Korean Ceramic Society
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• v.56 no.4
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• pp.399-402
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• 2019

The phase evolution, microstructure, and microwave dielectric properties of (Ba_1-xNa_x)(Mg_0.5-2xY_2xW_0.5-xTa_x)O₃ (0 ≤ x ≤ 0.05) ceramics were investigated. All compositions exhibited a 1:1 ordered perovskite structure. As the value of x increased, the dielectric constant (ε_r) exhibited a tendency to increase slightly. The quality factor reached the maximum value at x = 0.01. The temperature coefficient of resonant frequency (τ_f) increased from -19.32 ppm/℃ to -5.64 ppm/℃ in the positive direction as x increased. The dielectric constant (ε_r), quality factor (Q × f₀), and temperature coefficient of resonant frequency (τ_f) of the composition x = 0.05, i.e., (Ba_0.95Na_0.05)(Mg_0.4Y_0.1W_0.45Ta_0.05)O₃ were 19.9, 128,553 GHz, and -5.6 ppm/℃, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.2
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• pp.104-108
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• 2013

In this paper, the $0.95(Na_{0.5}K_{0.5})_{0.04}[(Nb_{0.8}Ta_{0.20})_{0.994}Co_{0.015}]O_3$(abbreviated as NKNT) + $0.05KNbO_3$ lead-free piezoelectric ceramics were synthesized by the conventional mixed oxide method route with normal sintering. And also, the effects of calcination temperature on the microstructure, dielectric properties, and piezoelectric properties were investigated. A polymorphic phase transition(PPT) between orthorhombic and tetragonal phases was observed in specimens calcined at $810^{\circ}C{\sim}850^{\circ}C$. The ceramics calcined at $830^{\circ}C$ showed excellent piezoelectric properties: $d_{33}$= 179 pC/N, $k_p$= 0.384, $Q_m$= 79.73). These results indicate that the ceramic is a promising candidate material for lead-free piezoelectric ceramics.

• Proceedings of the Korean Vacuum Society Conference
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• 2009.08a
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• pp.323-323
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• 2009

• Proceedings of the Korean Vacuum Society Conference
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• 2001.07a
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• pp.56-56
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• 2001

• The Korean Journal of Ceramics
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• v.3 no.4
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• pp.263-268
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• 1997

RuO$_3$ thin films were deposited on Si(100) substrate at low temperatures by hot-wall metalorganic chemical vapor deposition. Bis(cyclopentadienyl) ruthenium, Ru$(C_5H_5)_2$, was used as the precursor RuO$_2$single phase was obtained at a low deposition temperature of 25$0^{\circ}C$ and the crystallinity of RuO$_2$thin films improved with increasing deposition temperature. RuO$_2$thin films grow perpendicularly to the substrate and show the columnar structure. The grain size of RuO$_2$films drastically increases with increasing the deposition temperature. The resistivity of the 180 nm-thick RuO$_2$thin films deposited at 27$0^{\circ}C$ was 136 $\mu$$\Omega$-cm and increased with decreasing film thickness. SrBi$_2Ta_2O_4$ thin films deposited by rf magnetron sputtering on the RuO$_2$bottom electrodes showed a fatigue-free characteristics up to ~10$^10$ cycles under 5 V bipolar square pulses and the remanent polarization, 2 P$_r$ and the coercive field, 2 E, were 5.2$\mu$C/$\textrm{cm}^2$ and 76.0 kV/cm, respectively, for an applied voltage of 5 V The leakage current density was about 7.0$\times$10$^{-6}$ A/$\textrm{cm}^2$ at 150 kV/cm.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.1
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• pp.29-32
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• 2012

Lead-free $0.98(Na_{0.5},K_{0.5})NbO_3-0.02Li(Sb_{0.17}Ti_{0.83})O_3$ (hereafter 0.98NKN-0.02LST) ceramics doped with $Ag_2O$ were prepared using a conventional mixed oxide method. The specimen showed superior structural and electrical properties when 1 mol% $Ag_2O$ was doped. For the 0.98NKN-0.02LST+1.0mol%$Ag_2O$ ceramics sintered at $1,100^{\circ}C$, piezoelectric constant ($d_{33}$) of sample showed the optimum values of 207 pC/N. The 0.98NKN-0.02LST+1.0 mol%$Ag_2O$ ceramics are a promising candidate for lead-free piezoelectric materials.

• Proceedings of the Korean Nuclear Society Conference
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• 2004.10a
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• pp.1037-1038
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• 2004