Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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The Preparation and Characterization of Bismuth Layered Ferroelectric Thin Films by Sol-Gel Process (II. Dielectric Properties of Ferroelectric $Sr_{0.7}/B_{2.3}(Ta_{1-x}Nb_x)_2O_9$ Thin Films Prepared by MOD Process)

솔 - 젤법을 이용한 Bismuth Layered Structure를 가진 강유진성 박막의 제조 및 특성평가에 관한 연구 (II. MOD법으로 제조한 강유전성 $Sr_{0.7}/B_{2.3}(Ta_{1-x}Nb_x)_2O_9$ 박막의 유전특성)

  • 최무용 (고려대학교 재료공학과) ;
  • 송석표 (고려대학교 재료공학과) ;
  • 정병직 (고려대학교 재료공학과) ;
  • 김병호 (고려대학교 재료공학과)
  • Published : 1999.01.01
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Abstract

Ferroelectric $Sr_{0.7}/B_{2.3}(Ta_{1-x}Nb_x)_2O_9$(x=0, 0.1, 0.2, 0.3) thin films were deposited on $Pt/SiO_2/Si$ substrate by MOD(Metalorganic Decomposition) process. Metal carboxylate and metal alkoxide were used as precursors, and 2-methoxyethanol, xylene as solvents. After spin coating, thin films were pre-annealed at $400^{\circ}C$, followed by RTA(Rapid Thermal Annealing) and final annealing at $800^{\circ}C$ in oxygen atmosphere. These procedures were repeated three times to obtain thin films with the thickness of $2000{\AA}$. To enhance the nucleation and growth of layered-perovskite phase, thin films were rapid-thermally annealed above $720^{\circ}C$ in oxygen atmosphere. As RTA temperature increased, fluorite phase was transformed to layered-perovskite phase. And the change of Nb contents affected dielectric / electrical properties and microstructure. The ferroelectric characteristics of $Sr_{0.7}/B_{2.3}(Ta_{1-x}Nb_x)_2O_9$ thin film were Pr=8.67 $\mu{C}/cm^2$, Ec=62.4kV/cm and $I_{L}=1.4\times10^{-7}A/cm^2$ at the applied voltage of 5V, respectively.

Keywords

References

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