• Korean Journal of Crystallography
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• v.13 no.3_4
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• pp.165-171
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• 2002

Single phase $Pb(Fe_{1/2}Ta_{1/2})O_3$, ceramics were successfully synthesized from the powders prepared by solid state reaction (sintering temperature: $1100^{\circ}C$, density: $9.3g/cm^3$, average grain size: $5.1{\pm}1.2mm$, space group: Pm3m). Their dielectric properties measured at $-150{\sim}50^{\circ}C$ showed the maximum relative dielectric constant of 31000 at $-41^{\circ}C$. 1 kHz, and typical relaxor ferroelectrics characteristics such as diffuse phase transition and dielectric relaxation phenomena. However, the diffuseness of phase transition decreased and the dielectric properties became more normal ferroelectrics as the time of annealing at $1000^{\circ}C$ increased. By using Raman spectroscopy, it was revealed that the $Fe^{3+}$ and $Ta^{5+}$ ions in the as-sintered $Pb(Fe_{1/2}Ta_{1/2})O_3$, are stoichiometrically 1 : 1 ordered within the short-range that can not be probed even by transmission electron microscopy, and this stoichiometric 1 : 1 ordering is enhanced by the annealing. The relaxor ferroelectric characteristics in the as-sintered $Pb(Fe_{1/2}Ta_{1/2})O_3$, could be correlated with the stoichiometric 1 : 1 short-range ordering of B-site cations, and the decrease of relaxor ferroelectric characteristics in the annealed $Pb(Fe_{1/2}Ta_{1/2})O_3$ could be correlated with the enhanced stoichiometric 1 : 1 short-range ordering of B-site cations.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.15 no.3
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• pp.99-103
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• 2005

Lead scandium tantalate powders were prepared by a molten salt synthesis method using NaCl-KCl as a flux. Variations in phase formation and particle morphology were investigated for the temperature range from $700^{\circ}C\;to\;800^{\circ}C$. $Pb(Sc_{1/2}Ta_{1/2})O_3$, with pure perovskite phase was formed at $750^{\circ}C$ fur 2 hrs and the prepared powder had the cubic-like morphology and the average particle size below $0.5{\mu}m$. The results were discussed with respect to DTA, X-ray diffraction, and microstructural characterization data.

• Bulletin of the Korean Chemical Society
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• v.24 no.2
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• pp.183-188
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• 2003

The micro-patterning of multi-layered thin films containing CdS and $Ta_2O_5$ layers on ITO substrate with various structures was successfully obtained by combining three different techniques: chemical solution depositions, sol-gel, and microcontact printing (μCP) methods using octadecyltrichlorosilane (OTS) as the organic thin layer template. $Ta_2O_5$ layer was prepared by sol-gel casting and CdS one obtained by chemical solution deposition, respectively. Parallel and cross patterns of multi-layers with $Ta_2O_5$ and CdS films were fabricated additively by successive removal of OTS layer pre-formed. This study presents the designed architectures consisting of the two types of feature having horizontal dimensions of 170 ㎛ and 340 ㎛ with constant thickness ca. 150 nm of each deposited materials. The thin film lay-out of the cross-patterning is composed of four regions with chemically different layer compositions, which are confirmed by Auger electron microanalysis.

• Electrical & Electronic Materials
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• v.10 no.1
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• pp.61-67
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• 1997

We have studied dielectric properties of sol-gel derived tantalum oxide thin films as the insulators. As the sample is annealed from 300.deg. C to 700.deg. C, it is found amorphous below 600.deg. C and crystalline over it. Dielectric constant is maximum(18.6) when Ta$_{2}$O$_{5}$ film was annealed at 400.deg. C. It is found that dielectric strength in Ta$_{2}$O$_{5}$ film annealed at 400.deg. C (1.5MV/cm) increases and then decreases over annealed at 500.deg. C. This phenomenon was attributed to pinhole effect and crystallization. The de conduction properties can be interpreted by Poole-Frenkel effect.ect.

• Proceedings of the Materials Research Society of Korea Conference
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• 1993.11a
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• pp.113-113
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• 1993

• Journal of the Korean Chemical Society
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• v.29 no.3
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• pp.265-270
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• 1985

Ta$_2$O$_5$, Nb$_2$O$_5$, SnO$_2$ and ZrO$_2$ in tin-slag samples were determined by X-ray fluorescence spectrometry using the dilution parameter method and the analytical results were compared with the data obtained by standard calibration curve method. Tin-slag samples and one standard sample having very similar composition to the tin-slags were diluted with a proper diluent (La$_2$O$_3$) to the ratio of 1: 1, 1 : 2, 1 : 3 and 1 : 4. After measuring the X-ray intensities of original and diluted samples, the values of dilution parameters were calculated by using the dilution parameter equation. Without any calibration curve, the analytical results were calculated from the equation including the dilution parameter term. The results were in good agreement with the reference data by the standard calibration curve method.

• Journal of IKEEE
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• v.22 no.2
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• pp.356-361
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• 2018

We investigated a hydrogen gas sensor which is available in a high temperature atmosphere. The hydrogen sensors were fabricated into a metal-oxide-semiconductor (MOS) structure made of $Pd/Ta_2O_5/SiC$, and the thin tantalum oxide ($Ta_2O_5$) layer was fabricated by rapid thermal oxidation (RTO). In the experiment, we made three types of sensors with different palladium (Pd) patterns to evaluate the effect of Pd electrode on response characteristics. As the result, the response characteristics in capacitance were improved further when the filled area of the Pd electrode became larger.

• Proceedings of the Materials Research Society of Korea Conference
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• 1993.05a
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• pp.69-69
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• 1993

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.3
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• pp.377-383
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• 1997

Yttria-stabilized TZP alloyed with pentavalent oxides $(Ta_2O_5,\;Nb_2O_5)$ were fabricated by the conventional sintering method at $1500^{\circ}C$ in air to construct the simplified ternary phase diagram. The phase stability of tetragonal -$ZrO_2$ from the quasi-binary system $ZrO_2-YTa(Nb)O_4$, which do not transform to monoclinic-$ZrO_2$ even for a wide range of grain size and annealing temperature, was investigated to determine composition region of the non-transformable $t-ZrO_2$ solid solution$(NT_{ss})$. Phase stability of $NT_{ss}$ was probably due to the enhanced stability of $_YTa(Nb)O4$ having the tetragonal fergusonite structure. It was experimentally found that mixtures having $NT_{ss}$ alloyed with $T_{ss}$ by weight%% showed both excellent phase stability of $t-ZrO_2$ and fracture toughness even though the calculated composition of the mixture /was located outside $NT_{ss}$ composition region.

• Journal of the Korean Ceramic Society
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• v.40 no.3
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• pp.279-285
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• 2003

Ferroelectric S $r_{0.9}$B $i_{2.1}$T $a_{1.8}$N $b_{0.2}$ thin films with 200 nm thicknesses were deposited on Pt/Ti $O_2$/ $SiO_2$/Si Substrates by a sol-gel method. In these experiments, Sr(O $C_2$ $H_{5}$)$_2$, Bi(TMHD)$_3$, Ta(O $C_2$ $H_{5}$)$_{5}$ and Nb(O $C_2$ $H_{5}$)$_{5}$ were used as precursors, which were dissolved in 2-methoxyethanol. After UV-irradiation and RTA processes, the remanent polarization value (2 $P_{r}$) of SBTN thin films with annealed at $650^{\circ}C$ was 8.49 and 11.94 $\mu$C/$\textrm{cm}^2$ at 3 V and 5 V, respectively.