• Proceedings of the Materials Research Society of Korea Conference
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• 1994.11a
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• pp.1-1
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• 1994

;The electronic state calculations for various types of ceramic materials have beell performed by the use of $DV-X\;{\alpha}$ cluster method. The molecular orbital levels and wave functions for model clusters have been computed to study the electronic properties ami chemical bonding of the ceramics. For ${\beta}-sialon(Si_{6-z}Al_zO_zN_{8-z})$ which is a high temperature structural material based on ${\beta}-Si_3N_4$, we have made model cluster calculations to estimate the strength of chemical bonding between atoms by the Mulliken population analysis. It is found that the covalent bonding between Si and N atoms is very strong in pure ${\beta}-Si_3N_4$, but the covalency around solute atom is considerably weakened when Si atom is substituted by AI. This tendency is enhanced by an additional substitution of oxygen atom for N. The result calculated can well explain the experimental data of changes in mechanical properties such as the reductions of Young's modulus and Vickers hardness with increment of z-value in ${\beta}-sialon$. Various model clusters for transition metal oxides which show many interesting physical and chemical properties have also been calculated. High-valent perovskite-type iron oxides EMFe0_3E(M=Ca and Sr) possess very interesting magnetic and chemical properties. In these oxides, iron exists as $Fe^{4+}$ state, but the experimental measurement of Mossba~er effect suggests that disproportionation $2Fe^{4+}=Fe^{3+}+Fe^{5+}$ takes place for $CaFe0_3$ at low temperatures. The model cluster calculations for these compounds indicated the existence of considerably strong covalent bonding of Fe-O. The calculations of hyperfine interaction at iron neucleus show very good agreement with the experimental Mossbauer measurements. The result calculated also implies that the disproportionation reaction is strongly possible by assuming the quenching of breathing phonon mode at low temperatures.tures.

• Progress in Superconductivity and Cryogenics
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• v.15 no.3
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• pp.5-8
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• 2013

We have studied Hall effect for potassium (K)-doped $BaFe_2As_2$ superconducting thin films by analyzing the relation between the longitudinal resistivity (${\rho}_{xx}$) and the Hall resistivity (${\rho}_{xy}$). The thin films used in this study were fabricated on $Al_2O_3$ (000l) substrates by using an ex-situ pulsed laser deposition (PLD) technique under a high-vacuum condition of ~$10^{-6}$ Torr. The samples showed the high superconducting transition temperatures ($T_c$) of ~ 40 K. The ${\rho}_{xx}$ and the ${\rho}_{xy}$ for K-doped $BaFe_2As_2$ thin films were measured by using a physical property measurement system (PPMS) with a temperature sweep (T-sweep) mode at an applied current density of $100A/cm^2$ and at magnetic fields from 0 up to 9 T. We report the T-sweep results of the ${\rho}_{xx}$and the ${\rho}_{xy}$ to investigate Hall scaling behavior on the basis of the relation of ${\rho}_{xy}={A{\rho}_{xx}}^{\beta}$. The ${\beta}$ values are $3.0{\pm}0.2$ in the c-axis-oriented K-doped $BaFe_2As_2$ thin films, whereas the thin films with various oriented-directions like a polycrystal showed slightly lower ${\beta}$ than that of c-axis-oriented thin films. Interestingly, the ${\beta}$ value is decreased with increasing magnetic fields.

• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.1228-1229
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• 2008

The composites were fabricated 61[vol.%] ${\beta}$-SiC and 39[vol.%] $TiB_2$ powders with the liquid forming additives of 12[wt%] $Al_2O_3+Y_2O_3$ as a sintering aid by pressure or pressureless annealing at 1,650[$^{\circ}C$] for 4 hours. Reactions between SiC and transition metal $TiB_2$ were not observed in the microstructure and the phase analysis of the SiC-$TiB_2$ electroconductive ceramic composites. Phase analysis of SiC-$TiB_2$ composites by XRD revealed mostly of ${\alpha}$-SiC(6H), $TiB_2$, and In Situ $YAG(Al_5Y_3O_{12})$. The relative density, the flexural strength and the Young's modulus showed the highest value of 88.32[%], 136.43[MPa] and 52.82[GPa] for pressure annealed SiC-$TiB_2$ composites at room temperature. The electrical resistivity showed the lowest value of 0.0162[${\Omega}{\cdot}cm$] for pressure annealed SiC-$TiB_2$ composite at 25[$^{\circ}C$]. The electrical resistivity of the pressure annealed SiC-$TiB_2$ composite was positive temperature coefficient resistance (PTCR) but the electrical resistivity of the pressureless annealed SiC-$TiB_2$ composites was negative temperature coefficient resistance(NTCR) in the temperature ranges from 25[$^{\circ}C$] to 700[$^{\circ}C$].

• Korean Journal of Soil Science and Fertilizer
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• v.21 no.2
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• pp.129-134
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• 1988

Enzymatical properties of Streptomyces sp. S-45 producing chitinase and ${\beta}$-1.3-glucanase isolated from soil were investigated. Chitinase activity was 3.01(U/ml) and ${\beta}$-1.3-glucanase activity was 2.49(U/ml). The optimum medium for mycolytic enzyme production of strain was composed of 0.7% colloidal chitin, 0.3% glucose, 0.5% asparagine, 0.2% peptone, 0.01% NaCl, 0.01% $K_2HPO_4$ and 0.01% $MgSO_4{\cdot}7H_2O$ in intial pH 7.0. The optimal condition for mycolytic enzyme activities were: pH 6.5-7.0, $45-50^{\circ}C$. Enzyme activities were activated by metal ion as $10^{-2}M\;Co^{{+}{+}}$, $Cu^{{+}{+}}$, $Mn^{{+}{+}}$, $Al^{{+}{+}{+}}$ and $10^{-3}M\;Sn^{{+}{+}}$ but $Ag^{{+}{+}}$, $Hg^{{+}{+}}$ inhibited.

• Journal of Powder Materials
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• v.9 no.6
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• pp.394-408
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• 2002

Nanostructured high strength metastable Al-, Mg- and Ti-based alloys containing different amorphous, quasicrystalline and nanocrystalline phases are synthesized by non-equilibrium processing techniques. Such alloys can be prepared by quenching from the melt or by powder metallurgy techniques. This paper focuses on one hand on mechanically alloyed and ball milled powders containing different volume fractions of amorphous or nano-(quasi)crystalline phases, consolidated bulk specimens and, on the other hand. on cast specimens containing different constituent phases with different length-scale. As one example. $Mg_{55}Y_{15}Cu_{30}$- based metallic glass matrix composites are produced by mechanical alloying of elemental powder mixtures containing up to 30 vol.% $Y_2O_3$ particles. The comparison with the particle-free metallic glass reveals that the nanosized second phase oxide particles do not significantly affect the glass-forming ability upon mechanical alloying despite some limited particle dissolution. A supercooled liquid region with an extension of about 50 K can be maintained in the presence of the oxides. The distinct viscosity decrease in the supercooled liquid regime allows to consolidate the powders into bulk samples by uniaxial hot pressing. The $Y_2O_3$ additions increase the mechanical strength of the composites compared to the $Mg_{55}Y_{15}Cu_{30}$ metallic glass. The second example deals with Al-Mn-Ce and Al-Cu-Fe composites with quasicrystalline particles as reinforcements, which are prepared by quenching from the melt and by powder metallurgy. $Al_{98-x}Mn_xCe_2$ (x =5,6,7) melt-spun ribbons containing a major quasicrystalline phase coexisting with an Al-matrix on a nanometer scale are pulverized by ball milling. The powders are consolidated by hot extrusion. Grain growth during consolidation causes the formation of a micrometer-scale microstructure. Mechanical alloying of $Al_{63}Cu_{25}Fe_{12}$ leads to single-phase quasicrystalline powders. which are blended with different volume fractions of pure Al-powder and hot extruded forming $Al_{100-x}$$(Al_{0.63}Cu_{0.25}Fe_{0.12})_x$ (x = 40,50,60,80) micrometer-scale composites. Compression test data reveal a high yield strength of ${\sigma}_y{\geq}$700 MPa and a ductility of ${\varepsilon}_{pl}{\geq}$5% for than the Al-Mn-Ce bulk samples. The strength level of the Al-Cu-Fe alloys is ${\sigma}_y{\leq}$550 MPa significantly lower. By the addition of different amounts of aluminum, the mechanical properties can be tuned to a wide range. Finally, a bulk metallic glass-forming Ti-Cu-Ni-Sn alloy with in situ formed composite microstructure prepared by both centrifugal and injection casting presents more than 6% plastic strain under compressive stress at room temperature. The in situ formed composite contains dendritic hcp Ti solid solution precipitates and a few $Ti_3Sn,\;{\beta}$-(Cu, Sn) grains dispersed in a glassy matrix. The composite micro- structure can avoid the development of the highly localized shear bands typical for the room temperature defor-mation of monolithic glasses. Instead, widely developed shear bands with evident protuberance are observed. resulting in significant yielding and homogeneous plastic deformation over the entire sample.

• KOMUNHWA
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• no.60
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• pp.101-120
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• 2002

The floor tile on a coated green-glass was excavated from the Beobgwangsa Temple Site in the Pohang City. We analyzed using the MXRD, ICP-AES, EDXRF, TG/DTA and TIMS. As a result of microscope analysis, it was composed of quartz, feldspar and clay particl

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.9
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• pp.1602-1608
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• 2007

The composites were fabricated, respectively, using 61[vol.%] SiC-39[vol.%] $TiB_2$ and using 61[vol.%] SiC-39[vol.%] $ZrB_2$ powders with the liquid forming additives of 12[wt%] $Al_2O_3+Y_2O_3$ by hot pressing annealing at $1650[^{\circ}C]$ for 4 hours. Reactions between SiC and transition metal $TiB_2$, $ZrB_2$ were not observed in this microstructure. The result of phase analysis of composites by XRD revealed SiC(6H, 3C), $TiB_2$, $ZrB_2$ and $YAG(Al_5Y_3O_{12})$ crystal phase on the Liquid-Phase-Sintered(LPS) $SiC-TiB_2$, and $SiC-ZrB_2$ composite. $\beta\rightarrow\alpha-SiC$ phase transformation was occurred on the $SiC-TiB_2$ and $SiC-ZrB_2$ composite. The relative density, the flexural strength and Young's modulus showed the highest value of 98.57[%], 249.42[MPa] and 91.64[GPa] in $SiC-ZrB_2$ composite at room temperature respectively. The electrical resistivity showed the lowest value of $7.96{\times}10^{-4}[\Omega{\cdot}cm]$ for $SiC-ZrB_2$ composite at $25[^{\circ}C]$. The electrical resistivity of the $SiC-TiB_2$ and $SiC-ZrB_2$ composite was all positive temperature coefficient resistance (PTCR) in the temperature ranges from $25[^{\circ}C]$ to $700[^{\circ}C]$. The resistance temperature coefficient of composite showed the lowest value of $1.319\times10^{-3}/[^{\circ}C]$ for $SiC-ZrB_2$ composite in the temperature ranges from $100[^{\circ}C]$ to $300[^{\circ}C]$ Compositional design and optimization of processing parameters are key factors for controlling and improving the properties of SiC-based electroconductive ceramic composites.

• Korean Journal of Optics and Photonics
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• v.20 no.4
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• pp.201-206
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• 2009

In this study, we have fabricated a fiber-optic radiation sensor for detection of tritium using inorganic scintillators and optical fibers. We have tested various kinds of inorganic scintillators such as $Gd_2O_2S$ : Tb, $Y_3Al_5O_{12}$ : Ce, and CsI : Tl to select the most effective sensor tip. In addition, we have measured the scintillating lights using a photomultiplier tube as a function of distance between sensor tips to the source with the different activities of hydride tritium. The final results are compared with those which are obtained using a surface activity monitor.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.5
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• pp.427-431
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• 2020

In this research, we evaluated the electrical properties of polycrystalline-gallium-oxIde (Ga₂O₃) thin films grown by mist-CVD. A 500~800 nm-thick Ga₂O₃ film was used as a channel in a fabricated bottom-gate MOSFET device. The phase stability of the β-phase Ga₂O₃ layer was enhanced by an annealing treatment. A Ti/Al metal stack served as source and drain electrodes. Maximum drain current (I_D) exceeded 1 mA at a drain voltage (V_D) of 20 V. Electron mobility of the β-Ga₂O₃ channel was determined from maximum transconductance (g_m), as approximately, 1.39 ㎠/Vs. Reasonable device characteristics were demonstrated, from measurement of drain current-gate voltage, for mist-CVD-grown Ga₂O₃ thin films.

• Journal of the Korean Ceramic Society
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• v.44 no.7
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• pp.354-357
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• 2007

The nitriding and post-sintering behavior of silicon powder compact containing sintering additives of 2.3 wt% and 7 wt% were investigated in this study. Regardless of the liquid phase content, elongated large grains of a typical morphology evolved in the post-sintered specimens. Phase analysis revealed a complete phase transformation into ${\beta}-Si_3N_4$ in both porous systems. Oxynitride second phases (mellilite) precipitated in the latter, while those were free in the former containing less amount of liquid phase. The post-sintering condition that yielded a favorable microstructure for a filter application was achieved when the specimens were soaked at $1800^{\circ}C$ for 2 h. It was found that the thermal conductivity of porous $Si_3N_4$ ceramics is dominated by the porosity more than this factor is influenced by the addition of $Al_2O_3$.