• 한국재료학회지
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• 제13권3호
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• pp.200-204
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• 2003

A statistical experiment method was employed to investigate the window of the thermal stability of $TiSi_2$films which are popular for Ti-salicide and ohmic layers. The statistical experimental results showed that the first order term of $TiSi_2$thickness and annealing temperature was acceptable as a function of $\Delta$resistivity by 95% reliability criteria, and R-sq value implying a fit accuracy of the model also showed a high value of 93.80%. We found that $\Delta$resistivity of the $TiSi_2$film annealed at $700^{\circ}C$ for 1 hr changed from 3.35 to $0.379\mu$$\Omega$$\cdot$cm with increasing thickness from 185 to $703\AA$, and TEX>$\Delta$resistivity of the $TiSi_2$film with a fixed thickness of 444 $\AA$ changed from 0.074 to 17.12 $\mu$$\Omega$$\cdot$cm with increasing temperature increase from 600 to $800^{\circ}C$. From these results, we report that the process conditions of$ 692^{\circ}C$-1 hr, $715^{\circ}C$-1 hr, and 73$0^{\circ}C$-1 hr for $TiSi_2$($400 \AA$) are stable by the criteria of 1, 2, and 3 $\mu$$\Omega$$\cdot$cm of $\Delta$resistivity, respectively.

• 한국반도체및디스플레이장비학회:학술대회논문집
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• 한국반도체및디스플레이장비학회 2007년도 춘계학술대회
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• pp.193-198
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• 2007

The NiSi is very promising candidate for the metallization in 60nm CMOS process such as FUSI(fully silicided) gate and source/drain contact because it exhibits non-size dependent resistance, low silicon consumption and mid-gap workfunction. Ni film was first deposited by using ALD (atomic layer deposition) technique with Bis-Ni precursor and $H_2$ reactant gas at $220^{\circ}C$ with deposition rate of $1.25{\AA}/cycle$. The as-deposited Ni film exhibited a sheet resistance of $5{\Omega}/{\square}$. RTP (repaid thermal process) was then performed by varying temperature from $400^{\circ}C$ to $900^{\circ}C$ in $N_2$ ambient for the formation of NiSi. The process window temperature for the formation of low-resistance NiSi was estimated from $600^{\circ}C$ to $800^{\circ}C$ and from $700^{\circ}C$ to $800^{\circ}C$ with and without Ti capping layer. The respective sheet resistance of the films was changed to $2.5{\Omega}/{\square}$ and $3{\Omega}/{\square}$ after silicidation. This is because Ti capping layer increases reaction between Ni and Si and suppresses the oxidation and impurity incorporation into Ni film during silicidation process. The NiSi films were treated by additional thermal stress in a resistively heated furnace for test of thermal stability, showing that the film heat-treated at $800^{\circ}C$ was more stable than that at $700^{\circ}C$ due to better crystallinity.

• 한국재료학회지
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• 제13권7호
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• pp.465-472
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• 2003

Pd/Ge/Ti/Pt and Pd/Ge/Pd/Ti/Au ohmic contacts to n-type InGaAs were investigated for applications to AlGaAs/GaAs HBT emitter ohmic contacts. In the Pd/Ge/Ti/Pt ohmic contact minimum specific contact resistivity of $3.7${\times}$10^{-6}$ $\Omega$$\textrm{cm}^2$ was achieved by rapid thermal annealing at $^400{\circ}C$/10 sec. In the Pd/Ge/Ti/Au ohmic contact, minimum specific contact resistivity of $1.1${\times}$10^{-6}$ $\Omega$$\textrm{cm}^2$ was achieved by annealing at 40$0^{\circ}C$/10 sec but the ohmic performance was degraded with increasing annealing temperature due to the reaction between the ohmic contact materials and the InGaAs substrate. However, non-spiking planar interface and relatively good ohmic contact (high-$10^{-6}$ /$\Omega$$\textrm{cm}^2$) were maintained after annealing at $450^{\circ}C$/10 sec. Therefore, these thermally stable ohmic contact systems are promising candidates for compound semiconductor devices. RF performance of the AlGaAs/GaAs HBT was also examined by employing the Pd/Ge/Ti/Pt and Pd/Ge/Pd/Ti/Au systems as emitter ohmic contacts. Cutoff frequencies were 63.5 ㎓ and 65.0 ㎓, respectively, and maximum oscillation frequencies were 50.5 ㎓ and 51.3 ㎓, respectively, indicating very successful high frequency operations.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.160-160
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• 2010

In this work, we investigate ohmic contacts to p-type GaN using a Pt/Cu/Au metallization scheme in order to achieve low resistance and thermally stable ohmic contact on p-GaN. An ohmic contact formed by a metal electrode deposited on a highly doped InGaN/GaN superlattice sturucture on p-GaN layer. The specific contact resistance is $1.56{\times}10^{-6}{\Omega}cm^2$ for the as-deposited sample, $1.35{\times}10^{-4}{\Omega}cm^2$ for the sample annealed at $250^{\circ}C$ and $6.88{\times}10^{-3}{\Omega}cm^2$ for the sample annealed at $300^{\circ}C$.

• 폴리머
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• 제36권4호
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• pp.513-518
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• 2012

열적으로 안정한 탄화수소계 액상 파라핀인 YK-D130을 분산매로 사용하여 ${\omega}$-amino carboxylic acid와 adipic aicd로부터 폴리아미드 12(PA12) 올리고머(oPA1)를 제조하였으며 이들을 통상의 벌크중합으로 제조되는 비슷한 분자량의 폴리아미드 올리고머(oPA2)로 합성하여 분자량과 기타 특성을 비교하였다. 색도 분석 결과 oPA1이 더 밝은 백색을 나타냈고, GPC 결과로부터 oPA1가 더 좁은 분자량 분포를 보였다. 나아가 oPA1과 oPA2를 hard segment로 하고 poly(tetramethylene glycol)(PTMG)을 soft segment로 하는 탄성의 poly(ether-block-amide)(PEBA)를 합성하였다. 합성된 PEBA의 분자량과 기계적 성질 등을 비교 분석하였다.

• 한국수산과학회지
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• 제32권6호
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• pp.748-752
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• 1999

본 연구는 고밀도 배양시 rotifer의 영양강화 방법 및 영앙강화제에 따른 rotifer의 개체밀도와 지방산 조성을 조사하였다. 첫째 방법은 담수산 Chlorella로 rotifer를 고밀도로 배양한 후 영양강화제인 유지효모, Algamac, Super Selco, 해수산 Chlorella로 2차 영양강화 하였다. 두 번째 방법은 rotifer 반 연속 고밀도 배양중 18시간 동안 담수산 Chlorella를 공급한 후 6시간동안 영양강화제를 공급하였고 대조구로 담수산 Chlorella을 공급하지 않고 24시간 동안 해수산 Chlorella를 공급하였다. 배양수조는 5$\ell$를 이용하여 수온 $28^{\circ}C$를 유지하였고 산소가스를 공급하였다. 반 연속 고밀도 배양 방법에서 24시간 동안 해수산 Chlorella를 공급하였을 때 rotifer 밀도와 용존산소는 안정적으로 유지되었고 rotifer의 n-3 HUFA의 함량이 다른 실험구보다 가장 높게 나타났다. 그러나 2차 영양강화 방법과 반 연속 고밀도 배양 방법에서 유지효모, Algamac 및 Super Selco로 영양강화하였을 때 rotifer의 밀도와 용존산소는 급격히 감소하는 경향을 보였고 이들 영양강화제 가운데 Super Selco가 비교적 높은 n-3 HUFA의 함량i글 보였다. 따라서 본 실험을 통해서 rotifer 고밀도 배양시 안정적인 rotifer 성장과 rotifer의 질적 개선을 위해서는 24시간 해수산 Chlorella를 공급하는 것이 효율적인 것으로 판단된다.

• Journal of Ecology and Environment
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• 제43권1호
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• pp.31-42
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• 2019

Background: Han River estuary is a national wetland reserve near the Demilitarized Zone (DMZ) between South Korea and North Korea. This trans-boundary estuary area has been well preserved and shows distinctive plant communities along the salinity gradient. To elucidate energy flows and nutrient cycling in this area, we studied trophic relations between the dominant sesarmid crab, Sesarma dehaani, and food sources in three wetlands with different environments along the estuarine gradients. Results: Stable isotope signatures (${\delta}^{13}C$ and ${\delta}^{15}N$) of the crabs were significantly different among the sites and body size classes. Seasonal changes in ${\delta}^{13}C$ of small crabs were distinct from those of large individuals at all the sites. The isotopic values and fatty acid profiles of the crabs were more different among the sites in September than in May. In May, large-sized crabs utilized more plant materials compared to other dietary sources in contrast to small-sized crabs as revealed by a stable isotope mixing modeling, whereas contributions to diets of crabs were not dominated by a specific diet for different body size in September except at site 1. Based on PCA loadings, fatty acid content of $18:3{\omega}3$, known as a biomarker of plant materials, was the main factor to separate size groups of crabs in May and September. The ${\delta}^{13}C$ value of sediment had high correlation with those of small-sized crabs at site 1 and 2 when 1-month time lag was applied to the value for crabs during the surveyed period. Conclusions: Based on the stable isotope and fatty acid results, the consumption habits of S. dehaani appear to be distinguished by sites and their size. In particular, smaller size of S. dehaani appears to be more dependent on fewer food sources and is influenced more by the diet sources from the sediments in Han River estuary.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.19-19
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• 2009

TiNxOy/TiNx multilayer thin films with a high resistance (~ k$Omega$) were deposited on SiO2/Si substrates at room temperature by sputtering. The TiNx thin films show island and smooth surface morphology in samples prepared by dc and rf magnetron sputtering, respectively. TiNxOy/TiNx multilayer has been developed to control temperature coefficient of resistance (TCR) by the incorporation of TiNx layer (positive TCR) inserted into TiNxOy layers(negative TCR). Electrical and structural properties of sputtered TiNxOy/TiNx multilayer films were investigated as a function of annealing temperature. In order to achieve a stable high resistivity, multilayer films were annealed at various temperatures in oxygen ambient. Samples annealed at 700 oC for 1 min exhibit a good TCR value and a stable high resistivity.

• 한국염색가공학회지
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• 제23권3호
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• pp.219-226
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• 2011

Recently, study of functional clothing for vital sensing is focused on improving conductivity and decreasing resistance, in order to enhance the electrocardiogram(ECG) sensing accuracy and obtained stable environmental durability on operation condition. In this study, four ECG fabrics that having different componnt yarns and weaving structures were produced to analyze their environmental durabilities and electric properties under general operation conditions including different physical and chemical stimulation. For outstanding electric properties and physical properties, the optimized ECG sensing fabric should consist of a fabric of 2 up 3 down twill structure containing 210de silver-coated conductive yarns and polyester yarn in warp and weft directions respectively. The selected fabric has $0.11{\Omega}$ which is relative lower resistance than otherwisely produced fabrics under ECG measurement condition. And it has 7% stable resistance changes under 25% strain and repeated strain.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 추계학술대회 논문집 전기물성,응용부문
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• pp.48-49
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• 2006

Highly conductive and transparent films of Ga-doped ZnO have been prepared by pulsed laser deposition using a ZnO target with 3 wt% ${Ga_2}{O_3}$ dopant. Films with the resistivity as low as $3.3{\times}10^{-4}{\Omega}cm$ and the transmittance above 80 % at the wavelength of 400 to 800 nm can be fabricated on glass substrate at room temperature. It is shown that a stable resistivity for the use in oxidation ambient at high temperature can be obtained for the films. Heat treatments were performed to examine the thermal stability of ZnO and GZO films at ptemperature range from $100^{\circ}C$ to $400^{\circ}C$ in $O_2$ ambient for 30 minutes. The resistivity of ZnO film annealed at $400^{\circ}C$ increased by two orders of magnitude, in case of GZO film was relatively stable up to at $400^{\circ}C$. For practical applications at high temperatures the thermal stability of resistivity of GZO thin films might become an advantage for transparent electrodes.