Using metal/Si materials as a recording layer, we have achieved good results for a SR disc (super resolution disc). Mainly by controlling metal composition and the ratio of metal to Si of recording layer, signal qualities were greatly enhanced. At the mark length of 75nm, the best CNR (Carrier to Noise Ratio) was about 45dB. Write power was reduced down to about 6.5mW. LFN (Low Frequency Noise) could also be reduced down to 14dB. Single tone pattern jitters for every mark whose length is from 2T through 8T were achieved to be below 10%. The readout signal was stable sustaining CNR>40dB during about 15,000 times reading. The so-called "3T-problem" could be avoided.

Scanning Prove Microscope (SPM) - based Data Storage (SDS)는 Atomic Force Microscope (AFM)을 이용하여 Cantilever Tip 이 저장 장치 미디어에 나노미터 단위로 비트를 읽고, 쓰고 지우는 저장 장치로써, x, y 두 축을 이용한다. 따라서 축간 coupling 의 영향이 크게 발생한다. 따라서 축간 coupling 의 영향을 고려하여 제어기를 설계하여야 한다. 본 논문은 coupling 요소를 제거하기 위하여 Feedforward Decoupler 를 설계하여 Stage 의 입력 앞 단에 추가하는 방법을 제안하였다. Feedforward Decoupler 를 추가함으로써 coupling 요소가 줄어드는 것을 모의 실험을 통해 확인한다. 이를 통해 나노급으로 보다 정밀한 제어가 가능함을 확인하였다.

Surface finishing using magnetorheological (MR) fluid is useful to finish small but not too small workpieces such as those in a few millimeter scale. However, due to the high surface hardness, this finishing process does not seem to be suit for applying to a hard disk slider. In this work, a preliminary study is performed on the finishing of the hard disk slider surface with a mixture of an MR fluid and diamond powder. During a wheel type MR finishing process, centrifugal force is found to be a major factor to cause a reduction in material remove rate (MRR), which is supported by a theoretical model. To facilitate this founding, the rotational speed of tool is confined to 500rpm while a rectilinear alternating motion with the mean speed, which is equivalent to the rotational speed, is additionally applied to the workpieces. As a consequence, MRR of about 2 times of the sole rotational case is obtained. This paper shows that MR finishing process can be used to polish a hard material in millimeter scale efficiently by controlling the speeds of the tool and the workpiece.

Atomic Force Microscopy (AFM)방식을 이용한 Scanning probe Data Storage (SDS) 시스템은 array cantilever 를 이용하여 나노 단위로 데이터 읽기, 쓰기를 하는 시스템이다. 따라서 미디어가 있는 stage 의 x 축과 y 축 및 두 축간 coupling 을 고려한 제어기 설계가 요구된다. 본 논문은 SDS 시스템의 축간 coupling 을 고려하지 않은 기존의 제안된 LQG 에 PI 를 추가한 제어기 구조를 사용한다. 두 축간 coupling 공진의 영향을 최소화 하기 위해 convex optimization 으로 설계된 최적의 position profile를 기준 입력신호로 사용한다. 제안된 제어기를 SDS 시스템에 적용하여 모의실험을 하고 그 결과 position profile 로 인해 각 축간 coupling 공진 영향이 감소하여 tracking performance 가 기존의 LQG 제어기 보다 향상된 것을 확인한다.

Reliability of a hard disk drive depends on the head disk interface (HDI) characteristics. Particularly, the disk media and the head can be damaged due to contact between the two components during operation. The contact may occur due to particles being introduced into the disk/slider interface or due to direct contact between the slider and the disk. Such contacts may be induced by external vibration or abnormal operation of the HDI. In this work the characteristics of scratches generated on the disk surface were investigated. The scratches were generated by impacting the hard disk. The type of scratches was analyzed with respect to their shape and dimensions.

In this paper we explain why future probe storage systems will use patterned media. As a model system, magnetic patterned media will be discussed, even though their data density is limited to about $7Tbit/in^2$. The first results on magnetic probe storage on patterned media are presented, and the problem of switching field distribution is discussed in detail. Finally we will present the first steps into two-dimensional coding for patterned media.

Nano-sized inverted domain dots in ferroelectric materials have potential application in ultrahigh-density rewritable data storage systems. Herein, a data storage system is presented based on scanning non-linear dielectric microscopy and a thin film of ferroelectric single-crystal lithium tantalite. Through domain engineering, we succeeded to form an smallest artificial nano-domain single dot of 5.1 nm in diameter and artificial nano-domain dot-array with a memory density of 10.1 Tbit/$inch^2$ and a bit spacing of 8.0 nm, representing the highest memory density for rewritable data storage reported to date. Sub-nanosecond (500psec) domain switching speed also has been achieved. Next, long term retention characteristic of data with inverted domain dots is investigated by conducting heat treatment test. Obtained life time of inverted dot with the radius of 50nm was 16.9 years at $80^{\circ}C$. Finally, actual information storage with low bit error and high memory density was performed. A bit error ratio of less than $1\times10^{-4}$ was achieved at an areal density of 258 Gbit/inch2. Moreover, actual information storage is demonstrated at a density of 1 Tbit/$inch^2$.