In this paper, it is intended to present more reproducible and quantitative method for adhesion assemssement. In scratch test, micromechanical analysis on the stress state beneath the indenter was carried out considering the additional blister field. The interface adhesion was quantified as work of adhesion through Griffith energy approach on the basis of the analyzed stress state. The work of adhesion for DLC film/WC-Co substrate calculated through the proposed analysis shows the identical value regardless of distinctly different critical loads measured with the change of film thickness and scratching speed. On the other hand, uniaxial loading was imposed on DCL film/Al substrate, developing the transverse film cracks perpendicular to loading direction. Since this film cracking behavior depends on the relative magnitude of adhesion strength to film fracture strength, the quantification of adhesion strength was given a trial through the micromechanical analysis of adhesion-dependence of film cracking patterns. The interface shear strength can be quantified from the measurement of strain $\varepsilon$s and crack spacing $\lambda$ at the cessation of film cracking.

High pressure FTIR and Raman spectra of soild $C_{70}$ were measured at pressure up to 11 GPa and room temperature. The slope (dv/dp) of the frequency-pressure plots for several IR and Raman mode changed around 1.5 GPa, where a solid-solid transition might occur. In IR study, we can observe new mode appeared around 777$cm^{-1}$1 above 5.5 GPa which might indicate another solid-solid transition. Our study showed that this transition might be irreversible.

The diamondlike (DLC) films were deposited by RF plasma CVD system which had cathode consisting of mesh sheet, for the purpose of a protection from wear of OPC surface of the electrophotographic photosensitive body. Material charateristics and tribological properties of the films were also investigated and finally copying performance was evaluated with DLC deposited OPC samples. The surface resistance of the DLC film unaffected by the surface potential of the OPC was about $10^{11}{\Omega}$ and its hardness was about 1200 kg/$\textrm{mm}^2$. In this case the film showed typical material strcture of dimondlike hydrocarbon. The friction coefficient of the film was lowered to 0.2~0.3 at the optimum condition in this investigation and their wear resistant was inproved by DLC-deposition on the OPC surface. DLC-deposited OPC samples with a good copying performance without image flow and draft could be obtained at some depositing conditions.

Because of the novel characteristics such as chemical stability, hardness, electrical resistivity and thermal conductivity, diamond-like carbon (DLC) film is a suitable material for the passivation layers. For this purpose, using the PECVD, DLC films were synthesized at room temperature. The adhesion and the hardness of the DLC films deposited on Si an SiO2 substrate were measured. The resistivity of 5.3$\times$$10^8$$\Omega$.cm was measured by automatic spreading resistance probe analysis method. The thermal conductivities of different DLC films were measured and compared with that of phospho silicate glass (PSG) film which is commonly used as passivation layers. The thermal conductivity of DLC film was improved by increasing hydrogen flow rate up to 90 sccm and was better than that of PSG film. The patterning techniques of the DLC film developed using the RIE and the lift-off method to form 5$\mu\textrm{m}$ line. Finally, the thermal characteristics of the power transistor with the DLC film as passiviation layer was analyzed.

Hydrogenated amorphous carbon films were deposited on silicon substrates by using an RF PECVD. The hydrogen/methane ratio was varied from 50% to 88% to study the effect of hytdrogen in the film on the tribological properties. The friction and wear behaviors of the deposited films were investigated by ball-on-disk type wear tester. FT-IR spectra were used to characterize the structure of the films. Tribological properties of carbon films were correlated with their structure such as ratio of "polymer-like" stretching type and that of sp2 bonding. The result showed that the annealing caused a decrease in the amount of wear of contacted $Si_3N_4$ balls and a increase in the coefficient of friction. Possible explanation for annealing effect was discussed by the hydrogen desorption.esorption.

Although tribological behavior of Si incorporated DLC films have been intensely investigated, their mechanical properties were not consistent among previous publications. The present work reported the structural change by adding Si, and their effects on the mechanical properties. Si incoporated DLC films were deposited using mixtures of benzene and diluted silane with hydrogen of various volume fractions. We could obtain the films of $X_{si}$ (defined by the Si fraction without considering hydrogen) ranging from 0.01 to 0.21, and found that the mechanical properties of the films changed significantly in the range less than $X_{si}=0.06$. In this range, the hardness and stress increased with Xsi. For higher content of Si, the hardness and stress showed saturated behavior with $X_{si}$. This behavior was discussed in terms of the changes in atomic bond structures.

The effects of surface conditions of the C-2 cemented carbide substrate on the adhesion of diamond film were investigated. The substrates were pretreated for different times with Murakami's reagent and then the acid solution of an H2SO4-H2O2. The adhesion strength was estimated by a peeling area around the Rockwell-A indentation. The cutting performance of the diamond-coated tools was evaluated by measuring flank wears in dry turning of Al-17% Si alloy. The morphology of deposited diamond crystallites was dominated by (111) and (220) surfaces with a cubooctahedral shape. The diamond film quality was hardly affected by the surface conditions of the substrate. The variation of tool life with longer substrate etching times resulted from a compromies between the increase of film adhesion at the interface and the decrease of toughness at the substrate surface. The coated tools were mainly deteriorated by chipping and flaking of the diamond film form a lock of adhesion strength, differently from the wear phenomena of PCD tools.

Li-doped ZnO films were prepared on Corning 1737 glass substrate by an rf magnetron sputtering technique using ZnO targets with various $Li_2CO_3$ contents ranging from 0 to 10 mol%. The effects of Li doping on the crystallinity and electrical properties of ZnO films were studied for their SAW filter applications. The film resistivity largely increased without suppressing the c-axis orientation and crystallinity with a small addition of Li. Heat treatment of the film at 40$0^{\circ}C$ induced that the film resistivity, c-axis orientation and crystallinity slightly increased. However, heat treatment of the film at 50$0^{\circ}C$ resulted in much lower resistivity than that of as-deposited film due to the increase of electron concentration caused by the evaporationof Li atoms from the ZnO film. Large addition of Li into the ZnO film rather diminished the film resistivity and suppressed the c-axis growth. It was concluded that a small doping of Li into the ZnO film and heat treatment at 40$0^{\circ}C$ caused the film resistivity to be high enough for SAW filter applications without suppression of the c-axis orientation and crystallinity.

A chemically stabilized $\beta$-cristobalite, which is stabilized by stuffing cations of $Ca^{2+}$ and $Al^{3+}$, was prepared by a solution-polymerization route employing Pechini resin or PVA solution as a polymeric carrier. The polymeric carrier affected the crystallization temperature, morphology of calicined powder, and particle size distribution. In case of the polyvinyl alcohol (PVA) solution process, a fine $\beta$-cristobalite powder with a narrow particle size distribution (average particle size : 0.3$\mu\textrm{m}$) and a BET specific surface area of 72 $\m^2$/g was prepared by an attrition-milling for 1 h after calcination at 110$0^{\circ}C$ for 1h. Wider particle size distribution and higher specific surface area were observed for the $\beta$-cristobalite powder derived from Pechini resin. The cubie(P1-to-tetraganalb) phase transformation in polynystalline $\beta$-cristobalite was induced at approximately 18$0^{\circ}C$. Like other materials showing transformation toughening, a critical size effect controlled the $\beta$-to-$\alpha$ transformation. Densifed cristobalite sample had some cracks in its internal texture after annealing. The cracks, occurred spontaneoulsy on cooling, were observed in the sample with an average grain sizes of 4.0 $\mu\textrm{m}$ or above. In case of the sintered cristobalite having a composition of CaO.$2Al_2O_3$.40SiO$_2$, small amount of amorphous phase and slow grain growth during annealing were observed. Shear stress-induced transformation was also observed in ground specimen. Cristobalite having a composition of CaO.2Al2O3.80SiO2 showed a more sensitive response to shear stress than the CaO.$2Al_2O_3$.40SiO$_2$ type cristobalite. Shear-induced transformation resulted in an increase of volume about 13% in $\alpha$-cristobalite phase on annealing for above 10 h in the case of the former composition.

An attempt was made to understand the dissolution and reprecipitation behavior of the constituent phases such as TiC, TiN, and Ti(CN) in TiC-TiN-Ni system. During the liquid-phase sintering the TiC phase was found to dissolve preferentially in Ni binder. The solid-solution phase, Ti(CN), formed around the TiN phase, resulting in a core/rim structure. This result was reproduced when large TiC particles were used with fine TiN particles. The path for the microstructural change in TiC-TiN-Ni system was largely controlled by the difference in the interfacial energy of each phase with the liquid binder phase. The results were discussed with thermodynamic principles.

Fine powder of $\alpha$-tricalcium phosphate, tetracalcium phosphate and dicalcium phosphate were mixed together to prepare self-setting cements which form hydroxyapatite, one of the well-known biocompatible materials, as the end of products of hydration. Hardening behaviour of the cements was examined at the temperature range of 37~$70^{\circ}C$ and 150~$250^{\circ}C$ under the normal and hydrothermal condition respectively. The conversion of cements into hydroxyapatite was significantly improved ast elevated temperature and the paste was strengtheed by interlocking of hydroxyapatite crystals, indicating that the strength is determined by microtexture rather the amount of conversion of cements into hydroxyapatite.

$Dy^{3+}-(or Tm^{3+}-)$ doped $Ga_2O_3 \;and\; ZnGa_2O_4$ phosphors were prepared using the solid state reaction method to investigate their photoluminescent characteristics. Under 254 nm excitation, $Dy^{3+}-doped Ga2_O_3$ exhibited two emission bands of 460~505nm and 570~600nm. On the other hand, $Dy^{3+}-(or Tm^{3+}-)$ doped $ZnGa_2O_4 $phosphors exhibited a broad-band emission extending from 330 nm to 610 nm, peaking at about 430 nm(or 370 nm). In this study, an emission peak shift of nealy 50 nm towards longer wavelength region was observed with $Dy^{3+}$ doping in the $ZnGa_2O_4 $.

The photoluminescence characteristics of the zinc gallate have been investigated as a function of the composition and the firing atmosphere. Two distinct emission bands were observed whose peaks are 360 nm and 430 nm respectively. These emission bands are considered to be from two different emission centers. For $ZnO/Ga_2O_3$=49.3/50.7 or higher, 430 nm band is predominant and for $ZnO/Ga_2O_3$=49.2/50.8 or lower, 360nm band becomes predominant, whereas 430 nm band is almost completely suppressed. The shift of emission peak is though to be due to the change of the cation distribution with the zinc content in the spinel zinc gallate. Also, the emission centers responsible for the 360nm band are considered to be more efficient energy absorbers than the ones for the 430 nm band. Highly efficient green emitting phosphor was obtained by activating Zn-deficient zinc gallate with manganeses.