Journal of IKEEE (전기전자학회논문지)

Institute of Korean Electrical and Electronics Engineers (한국전기전자학회)
권호 표지
DOI QR코드

DOI QR Code

A Study on the Dual Emitter Structure 4H-SiC-based LIGBT for Improving Current Driving Capability

전류 구동 능력 향상을 위한 듀얼 이미터 구조의 4H-SiC 기반 LIGBT에 관한 연구

  • Woo, Je-Wook (Dept. of Electronics Engineering, Dankook University) ;
  • Lee, Byung-Seok (Dept. of Electronics Engineering, Dankook University) ;
  • Kwon, Sang-Wook (Dept. of Electronics Engineering, Dankook University) ;
  • Gong, Jun-Ho (Dept. of Electronics Engineering, Dankook University) ;
  • Koo, Yong-Seo (Dept. of Electronics Engineering, Dankook University)
  • Received : 2021.05.31
  • Accepted : 2021.06.25
  • Published : 2021.06.30
Download PDF
⟨ Previous Next ⟩

Abstract

In this paper, a SiC-based LIGBT structure that can be used at high voltage and high temperature is presented. In order to improve the low current characteristic, a dual-emitter symmetrical around the gate is inserted. In order to verify the characteristics of the proposed device, simulation and design were conducted using Sentaurus TCAD simulation, and a comparative study was conducted with a general LIGBT. In addition, splitting was performed by designating a variable for the length of the N-drift region in order to verify the electrical characteristics of the minority carriers. As a result of the simulation it was confirmed that the proposed dual-emitter structure flows a higher current at the same voltage than the conventional LIGBT.

본 논문에서는 고전압과 고온에서 사용할 수 있는 SiC 기반의 LIGBT 구조를 제시한다. 낮은 전류 특성을 향상시키기 위해 Gate를 중심으로 대칭되는 Dual-Emitter가 삽입된 것이 특징이다. 제안된 소자의 특성 검증을 위하여 Sentaurus TCAD simulation을 이용하여 시뮬레이션을 진행하였고 일반적인 LIGBT와 비교 연구를 진행하였다. 뿐만 아니라, 소수캐리어에 의한 전기적 특성을 검증하기 위해 N-drift 영역의 길이에 대하여 변수를 지정하여 Split을 진행하였다. 시뮬레이션 분석 결과, 제안된 Dual-Emitter 구조는 기존의 LIGBT보다 동일한 전압에서 높은 전류가 흐르는 것을 확인하였다.

Keywords

Acknowledgement

This research was supported by the MSIT(Ministry of Science and ICT), Korea, under the ITRC(Information Technology Research Center) support program(IITP-2020-2018-0-01421) supervised by the IITP(Institute for Information & Communications Technology Planning & Evaluation), This work was supported by Korea Evaluation Institute of Industrial Technology (KEIT) grant funded by the Ministry of Trade, Industry & Energy (20009739, "Development of Low Noise 3phase BLDC Motor Drive SoC for Electric Vehicles with Power Switch and Hall Sensors")

References

  1. Baliga BJ, Silicon carbide power device, Springer, 2009.
  2. Mihaela Alexandru, "4H-SiC Integrated Circuits for High Temperature and Harsh Environment Applications," p.16, 2013.
  3. K. Sheng et al, Yongxi Zhang, Ming Su, Jian H. Zhao, Xueqing Li, "Petre Alexandrov, Leonid Fursin, "Demonstration of the first SiC power integrated circuit," Solid-State Electronics, Vol.52, pp.1636-1646, 2008. DOI: 10.1016/j.sse.2008.06.037
  4. P. G. Neudeck, Steven L. Garverick, David J. Spry, Liang-Yu Chen, Glenn M. Behiem, Michael J. Krasowski, Mehran Mehregany, "Extreme temperature 6H-SiC JFET integrated circuit technology," Physica Status Solidi (A) Applications and Materials, Vol.206, No.10, pp.2329-2345, 2009. DOI: 10.1002/pssa.200925188
  5. Kuan-Wei Chu, Wen-Shan Lee, Chi-Yin Cheng, Chih-Fang Huang, Member, Feng Zhao, Member, Lurng-Shehng Lee, Young-Shying Chen, Chwan-Ying Lee, and Min-Jinn Tsai, "Demonstration of Lateral IGBTs in 4H-SiC," IEEE ELECTRON DEVICE LETTERS, Vol.34, No.2 pp.286-288, 2013. DOI: 10.1109/LED.2012.2230240