전자공학회논문지 (Journal of the Institute of Electronics and Information Engineers)

  • 제53권9호
  • /
  • Pages.49-53
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  • 2016
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  • 2287-5026(pISSN)
  • /
  • 2288-159X(eISSN)
대한전자공학회 (The Institute of Electronics and Information Engineers)
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High Resistivity SOI MOS 버랙터를 위한 RF 대신호 모델 연구

A Study on RF Large-Signal Model for High Resistivity SOI MOS Varactor

  • 홍서영 (한국외국어대학교 전자공학과) ;
  • 이성현 (한국외국어대학교 전자공학과)
  • Hong, Seoyoung (Department of Electronics Engineering, Hankuk University of Foreign Studies) ;
  • Lee, Seonghearn (Department of Electronics Engineering, Hankuk University of Foreign Studies)
  • 투고 : 2016.02.03
  • 심사 : 2016.08.31
  • 발행 : 2016.09.25
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초록

RF 채널 분포효과를 위한 전압 종속 외부 게이트 커패시턴스가 사용된 High resistivity(HR) silicon-on-insulator(SOI) RF accumulation-mode MOS 버랙터의 대신호 모델이 새롭게 개발되었다. 이 모델의 전압 종속 파라미터들은 정확한 S-파라미터 optimization을 사용하여 추출되었고, 이를 피팅하여 empirical 모델 방정식을 구축하였다. 이러한 새로운 대신호 RF 모델은 넓은 전압영역에서 측정된 Y11-파라미터 데이터와 20 GHz까지 잘 일치함으로써 정확도가 검증되었다.

A new large-signal model including the voltage-dependent extrinsic gate capacitance for RF channel distribution effect is developed for a high resistivity(HR) silicon-on-insulator(SOI) RF accumulation-mode MOS varactor. The data of voltage-dependent parameters are extracted by using accurate S-parameter optimization, and empirical model equations are constructed by data fitting process. The RF accuracy of this new model is validated by observing excellent agreements between modeled and measured Y11-parameter data in the wide voltage range up to 20 GHz.

키워드

참고문헌

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