JSTS:Journal of Semiconductor Technology and Science

  • 제14권5호
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  • Pages.508-517
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  • 2014
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  • 1598-1657(pISSN)
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  • 2233-4866(eISSN)
대한전자공학회 (The Institute of Electronics and Information Engineers)
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Design and Analysis of Sub-10 nm Junctionless Fin-Shaped Field-Effect Transistors

  • Kim, Sung Yoon (School of Electronics Engineering, Kyungpook National University) ;
  • Seo, Jae Hwa (School of Electronics Engineering, Kyungpook National University) ;
  • Yoon, Young Jun (School of Electronics Engineering, Kyungpook National University) ;
  • Yoo, Gwan Min (School of Electronics Engineering, Kyungpook National University) ;
  • Kim, Young Jae (School of Electronics Engineering, Kyungpook National University) ;
  • Eun, Hye Rim (School of Electronics Engineering, Kyungpook National University) ;
  • Kang, Hye Su (School of Electronics Engineering, Kyungpook National University) ;
  • Kim, Jungjoon (School of Electronics Engineering, Kyungpook National University) ;
  • Cho, Seongjae (Department of Electronic Engineering, Gachon University,) ;
  • Lee, Jung-Hee (School of Electronics Engineering, Kyungpook National University) ;
  • Kang, In Man (School of Electronics Engineering, Kyungpook National University)
  • 투고 : 2014.04.08
  • 심사 : 2014.08.17
  • 발행 : 2014.10.30
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초록

We design and analyze the n-channel junctionless fin-shaped field-effect transistor (JL FinFET) with 10-nm gate length and compare its performances with those of the conventional bulk-type fin-shaped FET (conventional bulk FinFET). A three-dimensional (3-D) device simulations were performed to optimize the device design parameters including the width ($W_{fin}$) and height ($H_{fin}$) of the fin as well as the channel doping concentration ($N_{ch}$). Based on the design optimization, the two devices were compared in terms of direct-current (DC) and radio-frequency (RF) characteristics. The results reveal that the JL FinFET has better subthreshold swing, and more effectively suppresses short-channel effects (SCEs) than the conventional bulk FinFET.

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참고문헌

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  5. Effects of Metal–Interlayer–Semiconductor Source/Drain Contact Structure on n-Type Germanium Junctionless FinFETs vol.65, pp.8, 2018, https://doi.org/10.1109/TED.2018.2847418