• 한국CDE학회논문집
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• 제14권6호
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• pp.415-423
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• 2009

Because of the fast changing car design and increasing facilities, manufacturing process of cars is getting more complex now a days. Particularly, car manufacturing system that consist of automated devices, applies various simulation techniques to validate device motion and detect collision. To cope with this problem, traditional manufacturing system deployed test-run with the real devices. However, increased computing power in a contemporary manufacturing system changes it into realistic 3D simulation environment. Similarly, managed device data that was generated using 2D traditionally, can be converted to 3D realistic simulation. The existing problem with 3D simulation is disjoint data interaction between different work stations. Consequently, JIGs, fixing the car part accurately, are changed according to fixing position on the part or a part shape properties. In practice, the 3D JIG data has to be managed according to kinematic information, but not of its features. However, generating kinematic information to the 3D model repeatedly according to frequent change in part is not explained in current literatures. To fill this knowledge gap, this paper suggests an improving method of rendering 3D JIG kinematics information to simulation model. Thereafter, it shows the result of implementation.

• Journal of Multimedia Information System
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• 제3권4호
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• pp.135-140
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• 2016

To improve the throughput of Device-to-Device (D2D) communication, we focus on the scenario where D2D pair can reuse multi-channel of cellular communication. However, as sharing same channel with cellular communication can cause interference between D2D communication and cellular communication, a proper interference management is needed. In this paper, we propose interference-based channel allocation to select the channels to be used by D2D communication and a solution from game theory perspective to optimize the D2D communication throughput under multi-channel as well as guarantee the interference from it to cellular network. The simulation results verify the stability of the proposed method.

• Journal of information and communication convergence engineering
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• 제20권3호
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• pp.143-152
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• 2022

The ongoing adoption of 5G will increase the data traffic, throughput, multimedia services, and power consumption for future wireless applications and services, including sensor and mobile networks. Multipath fading on wireless channels also reduces the system performance and increases energy consumption. To address these issues, device-to-device (D2D) and cooperative communications have been proposed. In this study, we propose two inter-clustering models using the relay selection method to improve system performance and increase energy efficiency in cooperative D2D networks. We develop two inter-clustering models and present their respective algorithms. Subsequently, we run a computer simulation to evaluate each model's outage probability (OP) performance, throughput, and energy efficiency. The simulation results show that inter-clustering model II has the lowest OP, highest throughput, and highest energy efficiency compared with inter-clustering model I and the conventional inter-clustering-based multirelay method. These results demonstrate that inter-clustering model II is well-suited for use in 5G overlay D2D and cellular communications.

• 전자공학회논문지D
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• 제34D권8호
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• pp.41-51
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• 1997

The device simulator (BANDIS) which can analyze efficiently the electrical characteristics of the semiconductor devices under the three dimensional stationary conditions on the IBM PC was developed. Poisson, electon and hole continuity equations are discretized y te galerkin method using a tetrahedron as af finite element. The frontal solver which has exquisite data structures and advanced input/output functions is dused for the matrix solver which needs the highest cost in the three dimensional device simulation. The discretization method of the continuity equations used in BANDIS are compared with that of the scharfetter-gummel method used in the commercial three-dimensional device. To verify an accuracy and the efficiency of the discretization method, the simulation results of the PN junction diode and the BJT from BANDIS are compared with those of the commercial three-dimensiional device simulator such as DAVINCI. The maximum relative error within 2% and the average number of iterations needed for the convergence is decreased by more than 20%. The total simulation time of the BJT with 25542 nodes is decreased to about 60% compared with that of DAVINCI.

• 한국정보통신설비학회:학술대회논문집
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• 한국정보통신설비학회 2007년도 학술대회
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• pp.247-250
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• 2007

There are three main kinds of service standards for 3G(Third-Generation) wireless communication as WCDMA, CDMA2000 and TD-SCDMA(Time Division-Synchronous Code Division Multiple Access). Compare with WCDMA and CDMA2000, TD-SCDMA system has distinguished technical characters. It is a TDD(Time Division Duplexing) based technology and deploys several advanced but in some respects complex technologies such as smart antenna, joint-detection and baton-handoff, etc. Therefore to analyze and design TD-SCDMA wireless network, it needs more efficient and systematic simulation tool. General simulation tool has so many analysis functions including path loss prediction, capacity and coverage analysis. For more suitable for TD-SCDMA, new additional technologies have to be implemented in simulation tool. Especially as the wireless network highly advancing focused on data service, it more needs to research and develop on the reliability of the simulation tool. In this paper, to give the concrete process and skill about how to implement TD-SCDMA simulation tool, we define the kinds of simulation tool and list basic analysis functions available for TD-SCDMA network design at first. And then we explain how to consider the effects of new technologies of TD-SCDMA and give the solutions about theses considerations.

• 전자공학회논문지
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• 제52권5호
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• pp.33-47
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• 2015

셀룰러 네트워크에서 기지국의 과부하를 줄이고 주파수 부족 현상을 완화시킬 수 있는 D2D(Device-to-Device) 통신에 대한 연구가 활발히 진행되고 있다. 하지만 셀룰러 네트워크의 상향링크 주파수 자원을 공유함으로써 상호간의 간섭은 증가하게 된다. 본 논문에서는 셀룰러와 D2D 사이의 간섭을 줄이기 위하여 새로운 하이브리드 수신기 FSC(Full Suppression Cancellation)를 제안한다. 제안한 수신기는 IRC(Interference Rejection Combining)와 SIC(Successive Interference Cancellation)를 결합하여 간섭을 억제 및 제거 할 수 있다. 시스템 레벨 시뮬레이션은 3GPP LTE-A 시스템의 20MHz 대역을 기반으로 이루어 졌으며, 시뮬레이션 결과 제안한 수신기를 통해 기존 수신기보다 SINR, 전송률 및 스펙트럼 효율 측면에서 성능 향상을 가져다주는 것을 확인하였다.

• 한국광학회지
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• 제33권4호
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• pp.137-145
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• 2022

광집적회로(photonic integrated circuits) 소자의 기본적인 부품 중 하나인 방향성 결합기 소자는 두 개의 인접한 광도파로 사이에서 일어나는 모드 간 광결합에 의해서 광파워를 분배하는 기능을 가진다. 본 논문에서는 방향성 결합기 소자를 제작하기 위한 설계 과정에 대하여 살펴보고 실제로 제작된 소자의 특성으로부터 설계 결과의 정확도에 대하여 확인하는 과정을 수행한다. 빔전파기법(beam propagation method, BPM) 시뮬레이션을 통하여 방향성 결합기 소자를 설계하는 과정에서, 유효굴절률 계산을 통하여 2차원 평면 구조로 변환된 소자에 대한 이차원 BPM 설계를 하여서 소자 구조를 확정하고, 실리카 광도파로 방향성 결합기 소자를 어레이 형태로 제작한 뒤 특성을 측정하였다. 실험 결과와 차이를 보이는 2D BPM 설계 결과를 보완하기 위하여 계산량이 훨씬 많은 3D BPM 설계를 수행하였으며 그 결과는 실험 결과에 더욱 근접하였다. 실험 결과와 일치하는 설계 결과를 얻기 위하여 3D BPM에 사용된 광도파로 코어 굴절률을 미세하게 보정하였으며 이를 통하여 실험치를 정확히 예측 가능한 BPM 설계를 수행하는 방법을 확립하였다.

• 한국광학회지
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• 제14권3호
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• pp.306-311
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• 2003

본 논문에서는 광전송시스템에서 파장분할다중화 광소자로 사용되는 박막필터형 광소자의 특성 분석 및 평가를 위해 입력광원을 모델링 하였으며 광경로에 대해 광선추적법을 사용하여 전산모의 한 광특성을 실험과 비교, 분석하였다. 그 결과 입력광원에 대한 cell 방식의 모델링이 결합효율의 정확도 및 가우시안 강도분포에 접근성을 볼 때 마이크로 옵틱스형 광소자 분석함에 있어 적합함을 알 수 있다. 박막필터형 광소자에 대한 최적 전산모의 결과 광섬유와 GRIN 렌즈 사이 거리가 0.24mm이며 GRIN 렌즈와 박막필터 사이 거리가 0.25mm일 때 최대 결합효율은 -0.11 ㏈이었으며 동일한 조건에의 실험결과 -0.35 ㏈의 최대 결합효율을 얻었다. 이것은 단심 및 이심페룰, GRIN 렌즈 등과 같은 구성품의 불완전성과 박막필터에 의한 손실을 고려할 때, 전산모의 결과와 매우 일치하는 것으로서 본 연구에서 제안한 입력광원의 모델링을 적용한 전산모의가 박막필터형 광소자의 특성을 예측할 수 있음을 보였다.

• 한국CDE학회논문집
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• 제16권3호
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• pp.216-226
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• 2011

Surgeon dentists usually rely on their experiential judgments from patients' oral plaster casts and medical images to determine the positional and directional information of implant fixtures and to perform drilling tasks during dental implant surgical operations. This approach, however, may cause some errors and deteriorate the quality of dental implants. Computer-aided methods have been introduced as supportive tools to alleviate the shortcomings of the conventional approach. In this paper, we present an approach of 3D dental implant simulation which can provide the realistic and immersive experience of dental implant information. The dental implant information is primarily composed of several kinds of 3D mesh models obtained as follows. Firstly, we construct 3D mesh models of jawbones, teeth and nerve curves from the patient's dental images using software $Mimics^{TM}$. Secondly, we construct 3D mesh models of gingival regions from the patient's oral impression using a reverse engineering technique. Thirdly, we select suitable types of implant fixtures from fixture database and determine the positions and directions of the fixtures by using the 3D mesh models and the dental images with software $Simplant^{TM}$. Fourthly, from the geometric and/or directional information of the jawbones, the gingival regions, the teeth and the fixtures, we construct the 3D models of surgical guide stents which are crucial to perform the drilling operations with ease and accuracy. In the application phase, the dental implant information is combined with the tangible interface device to accomplish 3D dental implant simulation. The user can see and touch the 3D models related with dental implant surgery. Furthermore, the user can experience drilling paths to make holes where fixtures are implanted. A preliminary user study shows that the presented approach can be used to provide dental students with good educational contents. With future work, we expect that it can be utilized for clinical studies of dental implant surgery.

• Transactions on Electrical and Electronic Materials
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• 제16권3호
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• pp.156-161
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• 2015

In this paper, we present simulation results obtained using SILVACO TCAD tools for a 3-D silicon on insulator (SOI) n-FinFET structure with a gate length of 8 nm at 300K. The effects of variations of the device’s key electrical parameters, such as threshold voltage, subthreshold slope, transconductance, drain induced barrier lowering, oncurrent, leakage current and on/off current ratio are presented and analyzed. We will also describe some simulation results related to the influence of the gate work function variations on the considered structure. These variations have a direct impact on the electrical device characteristics. The results show that the threshold voltage decreases when we reduce the gate metal work function Φ_m. As a consequence, the behavior of the leakage current improves with increased Φ_m. Therefore, the short channel effects in real 3-D FinFET structures can reasonably be controlled and improved by proper adjustment of the gate metal work function.