JSTS:Journal of Semiconductor Technology and Science

  • 제14권5호
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  • Pages.503-507
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  • 2014
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  • 1598-1657(pISSN)
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  • 2233-4866(eISSN)
대한전자공학회 (The Institute of Electronics and Information Engineers)
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On-State Resistance Instability of Programmed Antifuse Cells during Read Operation

  • Han, Jae Hwan (Department of Electronic Engineering, Sogang University) ;
  • Lee, Hyunjin (Department of Electronic Engineering, Sogang University) ;
  • Kim, Wansoo (Department of Electronic Engineering, Sogang University) ;
  • Yoon, Gyuhan (Department of Electronic Engineering, Sogang University) ;
  • Choi, Woo Young (Department of Electronic Engineering, Sogang University)
  • 투고 : 2014.04.02
  • 심사 : 2014.08.23
  • 발행 : 2014.10.30
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초록

The on-state resistance ($R_{ON}$) instability of standard complementary metal-oxide-semiconductor (CMOS) antifuse cells has been observed for the first time by using acceleration factors: stress current and ambient temperature. If the program current is limited, the $R_{ON}$ increases as time passes during read operation.

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참고문헌

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