Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Phase Change Characteristics of Aux(Ge2Sb2Te5)1-x (x=0, 0.0110, 0.0323, 0.0625) Thin Film for PRAM

PRAM을 위한 Aux(Ge2Sb2Te5)1-x (x=0, 0.0110, 0.0323, 0.0625) 박막의 상변환 특성

  • Shin, Jae-Ho (Department of Advanced Chemicals & Engineering, Chonnam National University) ;
  • Baek, Seung-Cheol (Department of Advanced Chemicals & Engineering, Chonnam National University) ;
  • Kim, Byung-Cheul (Department of Electronic Engineering, Gyeongnam National University of Science and Technology) ;
  • Lee, Hyun-Yong (School of Applied Chemical Engineering, Chonnam National University)
  • 신재호 (전남대학교 신화학소재공학과) ;
  • 백승철 (전남대학교 신화학소재공학과) ;
  • 김병철 (경남과학기술대학교 전자공학과) ;
  • 이현용 (전남대학교 응용화학공학부)
  • Received : 2011.02.18
  • Accepted : 2011.04.13
  • Published : 2011.05.11
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Abstract

An amorphous $Ge_2Sb_2Te_5$ thin film is one of the most commonly used materials for phase-change data storage. In this study, $Au_x(Ge_2Sb_2Te_5)_{1-x}$ thin film amorphous-to-crystalline phase-change rate were evaluated in using 658 nm laser beam. The focused laser beam with a diameter <10 ${\mu}m$ was illuminated in the power (P) and pulse duration (t) ranges of 1-17 mW and 10-460 ns, respectively, with subsequent detection of the responsive signals reflected from the film surface. We also evaluated the material characteristics, such as optical absorption and energy gap, crystalline phases, and sheet resistance of as-deposited and annealed films. The result of experiments showed that the thermal stability of the $Ge_2Sb_2Te_5$ film is largely improved by adding Au.

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References

  1. U. C. Sin, S. M. Jo, S. U. Lyu, and B. G. Yu, J . KIEEME, 16, 10 (2003).
  2. D. Salamon and B. F. Cockburn, International Workshop on Memory Technology (Design and Testing MT DT, 2003) p.86,
  3. A. Pirovano, A. L. Lacaita, A Benvenuti, F. Pellizzer, and R. Bez, IEEE Trans. on Electronic Devices, 51, 452 (2004). https://doi.org/10.1109/TED.2003.823243
  4. C. Sun, J. Lee, M. Youm, and Y. Kim, Jpn. J . Appl. Phys., 45, 9157 (2006). https://doi.org/10.1143/JJAP.45.9157
  5. K. H. Song, J. H. Seo, J. H. Kim, and H. Y. Lee, J . Appl. Phys., 106 (2009).
  6. S. W. Kim, K. H. Song, and H. Y. Lee, J . KIEEME, 21, 629 (2008).