Korean Journal of Materials Research (한국재료학회지)

Materials Research Society of Korea (한국재료학회)
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Removal of Organic Wax and Particles on Final Polished Wafer by Ozonated DI Water

  • Yi, Jae-Hwan (Leading Technology Team, R&D Center, Siltron Inc.) ;
  • Lee, Seung-Ho (Department of Materials Engineering, Hanyang University) ;
  • Kim, Tae-Gon (Department of Materials Engineering, Hanyang University) ;
  • Lee, Gun-Ho (Leading Technology Team, R&D Center, Siltron Inc.) ;
  • Choi, Eun-Suck (Leading Technology Team, R&D Center, Siltron Inc.) ;
  • Park, Jin-Goo (Department of Materials Engineering, Hanyang University)
  • Published : 2008.06.30
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Abstract

In this study, a new cleaning process with a low cost of ownership (CoO) was developed with ozonated DI water ($DIO_3$). An ozone concentration of 40 ppm at room temperature was used to remove organic wax film and particles. Wax residues thicker than $200\;{\AA}$ remained after only a commercial dewaxer treatment. A $DIO_3$ treatment in place of a dewaxer showed a low removal rate on a thick wax layer of $8000\;{\AA}$ due to the diffusion-limited reaction of ozone. A dewaxer was combined with a $DIO_3$ rinse to reduce the wax removal time and remove wax residue completely. Replacing DI rinse with the $DIO_3$ rinse resulted in a surface with a contact angle of less than $5^{\circ}$, which indicates no further cleaning steps would be required. The particle removal efficiency (PRE) was further improved by combining a SC-1 cleaning step with the $DIO_3$ rinsing process. A reduction in the process time was obtained by introducing $DIO_3$ cleaning with a dewaxing process.

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References

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