• Title/Summary/Keyword: $DIO_3$ (ozonated DI water)

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Removal of Organic Wax and Particles on Final Polished Wafer by Ozonated DI Water

  • Yi, Jae-Hwan;Lee, Seung-Ho;Kim, Tae-Gon;Lee, Gun-Ho;Choi, Eun-Suck;Park, Jin-Goo
    • Korean Journal of Materials Research
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    • v.18 no.6
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    • pp.307-312
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    • 2008
  • In this study, a new cleaning process with a low cost of ownership (CoO) was developed with ozonated DI water ($DIO_3$). An ozone concentration of 40 ppm at room temperature was used to remove organic wax film and particles. Wax residues thicker than $200\;{\AA}$ remained after only a commercial dewaxer treatment. A $DIO_3$ treatment in place of a dewaxer showed a low removal rate on a thick wax layer of $8000\;{\AA}$ due to the diffusion-limited reaction of ozone. A dewaxer was combined with a $DIO_3$ rinse to reduce the wax removal time and remove wax residue completely. Replacing DI rinse with the $DIO_3$ rinse resulted in a surface with a contact angle of less than $5^{\circ}$, which indicates no further cleaning steps would be required. The particle removal efficiency (PRE) was further improved by combining a SC-1 cleaning step with the $DIO_3$ rinsing process. A reduction in the process time was obtained by introducing $DIO_3$ cleaning with a dewaxing process.

Effect of Organic wax residues and particles removal by DIO3 (ozonated DI water) after Silicon Wafer batch Polishing Process (오존수를 이용한 실리콘 웨이퍼 연마 후 지용성 왁스 및 오염입자 제거의 영향)

  • Yi, Jae-Hwan;Lee, Seung-Ho;Kim, Tae-Gon;Park, Jin-Goo;Lee, Gun-Ho;Bae, So-Ik
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.06a
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    • pp.558-559
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    • 2007
  • A commercially de-waxer which kinds of solvent after was used to remove a thick organic wax film after polishing process and several steps of SC-1 cleanings were followed for the removal of organic wax residues and particles which requires long process time and high cost of ownership (COO). DIO3 was used to remove organic wax residues too achieve low COO. In this study, 0103 rinsing could use instead of 01 water rinsing. The process time and chemical consumption were reduced by using DIO3.

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