• Transactions of the Korean Society of Machine Tool Engineers
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• v.17 no.1
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• pp.21-28
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• 2008

The final polishing process is based on slurry, pad, conditioner, equipment. Therefore, the concept of wafer final polishing is also necessary for repeatability of results between polished wafers. In this study, the machining conditions have a pressure, table speed, machining time and slurry ratio. This research investigated the surface characteristics that apply variable machining conditions and response surface methodology was used to obtain more flexible and optimumal condition base on Taguchi method. On the base of estimated response surface curvature from the equation and results of Taguchi method, combined design of experiment was considered to lead to optimumal condition. Finally, polished wafer was obtained mirror like surface.

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.22 no.2
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• pp.310-317
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• 2013

In this paper, the contact pressure of the wafer and polishing pad for final polishing process for 300 mm-wafer were investigated through numerical analysis using FEM tool, ANSYS. The distribution of the contact pressure is one of main parameters which affects on the flatness and surface roughness of polished wafers. Two types of polishing head, a hard type head with ceramic disk and a soft type head with air bag were considered. The effects of the deformation and initial shape of table on the contact pressure were also examined. Both heads and tables were modeled as 3D finite element model from solid model, and the material properties of polishing pads and rubber plate for the air-bag head were obtained from tensile tests. The contact pressure deviation on wafer surface was smaller with air bag head than hard type head even when the table had form errors such as convex or concave. From this 3D analysis, it could be concluded that the air-bag head has better uniformity of the contact pressure on wafer. Also, the effects of inner diameter of air bag and radial clearance between wafer and retainer were investigated as view point of contact pressure concentration on the edge of wafer.

• Korean Journal of Materials Research
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• v.18 no.6
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• pp.307-312
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• 2008

In this study, a new cleaning process with a low cost of ownership (CoO) was developed with ozonated DI water ($DIO_3$). An ozone concentration of 40 ppm at room temperature was used to remove organic wax film and particles. Wax residues thicker than $200\;{\AA}$ remained after only a commercial dewaxer treatment. A $DIO_3$ treatment in place of a dewaxer showed a low removal rate on a thick wax layer of $8000\;{\AA}$ due to the diffusion-limited reaction of ozone. A dewaxer was combined with a $DIO_3$ rinse to reduce the wax removal time and remove wax residue completely. Replacing DI rinse with the $DIO_3$ rinse resulted in a surface with a contact angle of less than $5^{\circ}$, which indicates no further cleaning steps would be required. The particle removal efficiency (PRE) was further improved by combining a SC-1 cleaning step with the $DIO_3$ rinsing process. A reduction in the process time was obtained by introducing $DIO_3$ cleaning with a dewaxing process.