The Transactions of the Korean Institute of Electrical Engineers P (전기학회논문지P)

The Korean Institute of Electrical Engineers (대한전기학회)
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Fabrication and Properties of MFISFET Using $LiNbO_3$ Ferroelectric Films

$LiNbO_3$ 강유전체를 이용한 MFISFET의 제작 및 특성

  • 정순원 (ETRI 융합부품.소재연구부문) ;
  • 구경완 (호서대학교 국방과학기술학과)
  • Published : 2008.06.01
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Abstract

MFISFETs with platinum electrode on the $LiNbO_3$/aluminum nitride/Si(100) structures were successfully fabricated and the properties of the FETs have been discussed. $I_D-V_G$ characteristics of MFISFETs for linear region (that is, 0.1 V of the drain voltage) showed hysteresis loop with a counter-clockwise trace due to the ferroelectric nature of $LiNbO_3$ films. A memory window (i.e., threshold voltage shift) of the fabricated device was about 2[V] for a sweep from -4 to +4[V]. The estimated field-effect electron mobility and transconductance on a linear region were 530[$cm^2/V{\cdot}s$] and 0.16[mS/mm], respectively. The drain current of 27[${\mu}A$] on the "on" state was more than 3 orders of magnitude larger than that of 30[nA] on the "off" state at the same "read" gate voltage of l.5[V], which means the memory operation of the MFISFET.

Keywords

References

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