• Korean Journal of Crystallography
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• v.4 no.2
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• pp.74-85
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• 1993

Single crystals of LiNbO3 have found extensive application in electro-optic and nonlinear optic devices. However, laser-induced refartive index inhomogeneities, which have been labeled opical damage impose limits on device optical damage in LiNbO3 is imporved if more than 4.5 rml% MgO is added to the melt The laser damage thrueshold increased as much as 100 times better then that of undoped crystals. The MgO doped cystal has thus been urterlsiv81y studied since then. In the study, Mgo:LiNbOs(MLA) single crystals dopsd with 0, 2.5, 5.0, 7.5, 10.0 mol% MgO have been grown by the czocrualski technique. The metls were prepared in the platinum crluible and 15∼20mm diameter crystals were grown with a length of 20∼30mm in a resitance heater. The growth rate was 2.5mm/hr, the rotation speed 15rpn. Before sawing MLN single crystals were annealed for 24 hours under atmosphere at a temperature of 1080℃. After sawing, we have found an annual ring cross section of MNA crystals only in the direction of perpendicilar to the c-axis. Nonuniform dispusion of MgO was pointed out that the cuties of the state of oxide were strongly affected by oxygen partial pressure in.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.21-24
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• 1997

Ferroeletric LiNbO$_3$ thin films hale been prepared directly on Si(100) substrates by conventional RF magnetron spurttering system for nonvolatile memory applications. As-deposited films were performed RTA(Rapid Thermal Annealing) treatment in an oxygen atmosphere at 600 $^{\circ}C$ for 60 s. The rapid thermal annealed films were changed to poly-crystalline ferroelectric nature from amorphous of as-deposition. The resistivity of the ferroelectric LiNbO$_3$ film was increased from a typical vague of 1~2$\times$10$^{8}$ $\Omega$.cm before the annealing to about 1$\times$10$^{13}$ $\Omega$.cm at 500 kV/cm and reduce the interface state density of the LiNbO$_3$/Si(100) interface to about 1$\times$10$^{11}$ cm$^2$ . eV. Ferroelectric hysteresis measurements using a Sawyer-Tower circuit yielded remanent polarization (Pr) and coercive field (Ec) values of about 1.2 $\mu$C/cm$^2$ and 120 kV/cm, respectively.

• Journal of the Optical Society of Korea
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• v.18 no.6
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• pp.739-745
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• 2014

We have demonstrated a $Ti:LiNbO_3$ electro-optic electric-field sensor utilizing a $1{\times}2$ Y-fed balanced-bridge Mach-Zehnder interferometric (YBB-MZI) modulator, which uses a 3-dB directional coupler at the output and has two complementary output waveguides. A dc switching voltage of ~25 V and an extinction ratio of ~12.5 dB are observed at a wavelength of $1.3{\mu}m$. For a 20 dBm rf input power, the minimum detectable electric fields are ~8.21, 7.24, and ~13.3 V/m, corresponding to dynamic ranges of ~10, ~12, and ~7 dB at frequencies of 10, 30, and 50 MHz respectively. The sensors exhibit almost linear response for an applied electric-field intensity from 0.29 V/m to 29.8 V/m.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.70-73
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• 2001

MFIS(Metal-ferroelectric-insulator- semiconductor) structures using silicon oxynitride(SiON) buffer layers were fabricatied and demonstrated nonvolatile memory operations. Oxynitride(SiON) films have been formed on p-Si(100) by RTP(rapid thermal process) in O$_2$+N$_2$ ambient at 1100$^{\circ}C$. The gate leakage current density of Al/SiON/Si(100) capacitor was about the order of 10$\^$-8/ A/cm$^2$ at the range of ${\pm}$ 2.5 MV/cm. The C-V characteristics of Al/LiNbO$_3$/SiON/Si(100) capacitor showed a hysteresis loop due to the ferroelectric nature of the LiNbO$_3$ thin films. Typical dielectric constant value of LiNbO$_3$ film of MFIS device was about 24. The memory window width was about 1.2V at the electric field of ${\pm}$300 kV/cm ranges.

• Korean Journal of Optics and Photonics
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• v.13 no.1
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• pp.32-37
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• 2002

Passive polarization mode splitters at λ= 1.55 ${\mu}{\textrm}{m}$ were designed and fabricated based on Ti:x-cut LiNbO$_3$ single-mode optical waveguide and two-mode interference theory. The splitting ratio with waveguide width 8 ${\mu}{\textrm}{m}$, branching angle 0.55$^{\circ}$ and interfering length 470 ${\mu}{\textrm}{m}$ showed 16.18 dB, 21.25 dB for TE and TM input polarization modes, respectively. Polarization cross-talk of -16.28 dB and -21.28 dB for TE and TM modes was achieved. Total insertion losses of 2.24 dB/cm (TE) and 2.41 dB/cm (TM) were also measured. The devices operated nearly wavelength independently over a range or 30 nm.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.2
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• pp.116-120
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• 2011

The 0.98 ($Na_{0.44}K_{0.52})Nb_{0.84}O_3-0.02Li_{0.04}$ ($Sb_{0.06}Ta_{0.1})O_3-0.5$ mol%CuO ceramics have been fabircated by ordinary sintering technique and the effect of various calcination method on the electrical propertis and microstructure have been studied. It was observed that the various calcination method influenced the elelctrical properties and structural properties of the 0.98NKN-0.02LST-0.5 mol%CuO ceramics with the optimum piezoelectric constant ($d_{33}$) and electromechanical coupling factor ($k_p$) at room temperature of about $155{\rho}C/N$ and 0.349, respectively, from 0.98NKN-0.02LST-0.5 mol%CuO ceramics sample. The curie temperature ($T_c$) of this ceramic was found at $440^{\circ}C$. The 0.98NKN-0.02LST-0.5 mol%CuO ceramics are a promising lead-free piezoelectric ceramics.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.7
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• pp.543-546
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• 2011

We studied sintering temperature to enhance the piezoelectric properties of $0.98(Na_{0.5}K_{0.5})NbO_3-0.02Li(Sb_{0.17}Ta_{0.83})O_3$+0.01wt%ZnO (hereafter NKN-LST+ZnO) lead free piezoelectric ceramics. The synthesis and sintering method were the conventional solid state reaction method and sintering was executed at $1,080\sim1,120^{\circ}C$. We found that NKN-LST+ZnO ceramics at optimal sintering temperature showed the improved piezoelectric properties at the optimal sintering temperature. The NKN-LST+ZnO ceramics show good performance with piezoelectric constant $d_{33}$= 153 pC/N sintered at $1,090^{\circ}C$. The results reveal that NKN-LST+ZnO ceramics are promising candidate materials for lead-free piezoelectric application.

• Proceedings of the Korean Radioactive Waste Society Conference
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• 2004.06a
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• pp.285-291
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• 2004

As a part of assessment of the structural material for the molten salt handling system, corrosion behavior of Inconel 718, X-750, Haynes 75 and Haynes 263 alloys in the molten salt of LiCl-Li$_2$O-O$_2$was investigated in the range of temperature; $650^{\circ}C$, time; 24~168h, $Li_2O$; 3wt%, mixed gas; Ar~10%$O_2$. In the molten salt of LiCl-$Li_2O-O_2$, the order corrosion rate was Haynes 263 ＜ Haynes 75 ＜ Inconel X-750 ＜ Inconel 718. Haynes 263 alloy showed the highest corrosion resistance among the examined alloys. Corrosion products of alloys were as fellows: Haynes 75: $Cr_2O_4$, $NiFe_2O_4$, $LiNiO_2$, $Li_2NiFe_2O_4$, Inconel 718; $Cr_2O_4$, $NiFe_2O_4$, Haynes 263; $Li(Ni,Co)O_2$, $NiCr_2O_4$, $LiTiO_2$, Inconel X-750; $Cr_2O_3$, $NiFe_2O_4$,$FeNi_3$, (Al,Nb,Ti)$O_2$. Haynes 263 showed local corrosion behavior and Haynes 75, Inconel 718 and Inconel X-750 showed uniform corrosion behavior.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.8
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• pp.627-631
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• 2011

[ $[Li_{0.04}(Na_{0.54}K_{0.46})_{0.96}](Nb_{1-0.04-X}TaxSb_{0.04})O_3$ ]lead-free piezoelectric ceramics have been prepared by normal sintering at $1,100^{\circ}C$ for 5 h. X-ray diffraction analysis indicated that specimens demonstrate orthorhombic symmetry when $Ta\leq5$ mol%. While transforming into tetragonal symmetry when $x\geq20$ mol%. These suggest that the orthorhombic and tetragonal phases co-exist in the ceramics with 5 mol% $cm^3$. As the result of SEM images, the grain growth was decreased with the increase of Ta substitution. The ceramics become 'softening', leading to improvements in $k_p$, $\varepsilon_r$ and $d_{33}$, but a decrease in $Q_m$. Excellent properties of $k_p$= 0.46, $d_{33}$= 293 pC/N, ${\varepsilon}_r$= 1,583 and Tc= $340^{\circ}C$ were obtained when Ta= 15 mol%.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.8
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• pp.622-626
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• 2011

Lead-free piezoelectric ceramics with the composition of $(Na_{0.54}K_{0.46})_{0.96}Li_{0.04}(Nb_{1-0.10-x}Ta_{0.10}Sb_x)O_{3}$ (x= 0~8 mol%) were fabricated by nomal sintering at $1,090^{\circ}C$ for 5 h. the phase structure, microstructure and electrical properties were investigated with a emphasis on the influence of the Sb content. All samples exhibit a single perovskite phase over the whole compositional range. For the ceramics with x= 4 [mol%], two phase transitions are observed at $75^{\circ}C$ and $366^{\circ}C$, corresponding to the phase transitions of orthorhombic to tetragonal (To-t) and tetragonal to cubic (Tc), respectively. high electrical properties of $d_{33}$= 210.83 pC/N, kp= 40%, ${\varepsilon}_r$= 1,091.35, $\rho$= 4.54 g/$cm^2$ were obtained from the specimen with x= 4 [mol%], which suggests that the composition ceramics is a promising lead-free piezoelectric material.