Transactions on Electrical and Electronic Materials

  • 제3권4호
  • /
  • Pages.1-4
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  • 2002
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  • 1229-7607(pISSN)
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  • 2092-7592(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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Failure Analysis for High via Resistance by HDP CVD System for IMD Layer

  • Kim, Sang-Yong (ANAM Semiconductor Co., LTD) ;
  • Chung, Hun-Sang (Department of Electrical Engineering, Chosun University) ;
  • Seo, Yong-Jin (Department of Electrical & Electronics Engineering, Daebul University)
  • 발행 : 2002.12.01
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초록

As the application of semiconductor chips into electronics increases, it requires more complete integration, which results in higher performance. And it needs minimization in device design for cost saving of manufacture. Therefore oxide gap fill has become one of the major issues in sub-micron devices. Currently HDP (High-Density Plasma) CVD system is widely used in IMD (Inter Metal Dielectric) to fill narrower space between metal lines. However, HDP-CVD system has some potential problems such as plasma charging damage, metal damage and etc. Therefore, we will introduce about one of via resistance failure by metal damage and a preventive method in this paper.

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참고문헌

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