Transactions on Electrical and Electronic Materials

  • 제3권4호
  • /
  • Pages.5-9
  • /
  • 2002
  • /
  • 1229-7607(pISSN)
  • /
  • 2092-7592(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
권호 표지
DOI QR코드

DOI QR Code

Reproducible Chemical Mechanical Polishing Characteristics of Shallow Trench Isolation Structure using High Selectivity Slurry

  • 발행 : 2002.12.01
PDF 다운로드
⟨ 이전 논문 다음 논문 ⟩

초록

Chemical mechanical polishing (CMP) has become the preferred planarization method for multilevel interconnect technology due to its ability to achieve a high degree of feature level planarity. Especially, to achieve the higher density and greater performance, shallow trench isolation (STI)-CMP process has been attracted attention for multilevel interconnection as an essential isolation technology. Also, it was possible to apply the direct STI-CMP process without reverse moat etch step using high selectivity slurry (HSS). In this work, we determined the process margin with optimized process conditions to apply HSS STI-CMP process. Then, we evaluated the reliability and reproducibility of STI-CMP process through the optimal process conditions. The wafer-to-wafer thickness variation and day-by-day reproducibility of STI-CMP process after repeatable tests were investigated. Our experimental results show, quite acceptable and reproducible CMP results with a wafer-to-wafer thickness variation within 400$\AA$.

키워드

참고문헌

  1. S. Nag and A. Chatterjee, 'Shallow trench isolationfor sub-0.25 \mum IC technologies', Solid State Tech.,p. 129,1997
  2. S. W. Park, S. Y. Kim, and Y. J. Seo, 'Improvementof pad lifetime using POU (Point of use) slurryfilter and high spray method of de-ionized water', J.of KIEEME(in Korean), Vol. 14, No. 9, p.707, 2001
  3. C. B. Kim, S. Y. Kim, and Y. J. Seo, 'Characteristicsof slurry filter for reduction of CMP slurry-inducedmicro-scratch', J. of KIEEME(in Korean), Vol. 14,No.7,p.557,2001
  4. K. Smekalin, 'CMP dishing effects in shallowtrench isolation', Solid State Tech. p. 187, 1997
  5. S. Y. Kim, C. I. Kim, E. G. Chang, Y. J. Seo, T. H. Kim, and W. S. Lee, 'An optimized nitride residuephenomena of shallow trench isolation (STI)process by chemical mechanical polishing (CMP)',IUMRS-ICEM, P. 106, 1998
  6. S. Y. Kim, C. J. Park, and Y. J. Seo, 'Signal analysisof end point detection (EPD) method based onmotor current (MC)', IUMRS-ICEM 2002, p. 509,2002
  7. C. B. Kim, S. Y. Kim, S. Y. Jeong, and Y. J. Seo,'Global planahzation of direct STI-CMP processusing high selectivity slurry', Proc. of VLSIMultilevel Interconnection Conference, P. 222, 2001
  8. S. Y. Kim and H. S. Chung, 'A study oncharacterization and modeling of shallow trenchisolation in oxide chemical mechanical polishing',Trans. on EEM, Vol. 2, No. 3, P. 24, 2001