Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2009.06a
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- Pages.14-15
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- 2009
A Novel IGBT with Double P-floating layers
두 개의 P-플로팅 층을 가지는 새로운 IGBT에 관한 연구
- Lee, Jae-In (Korea University) ;
- Choi, Jong-Chan (Korea University) ;
- Yang, Sung-Min (Korea University) ;
- Sung, Man-Young (Korea University)
- Published : 2009.06.18
Abstract
Insulated Gate Bipolar Transistor(IGBTs) are widely used in power device industry. However, to improve the breakdown voltage, IGBTs are suffered from increasing on-state voltage drop due to structural design. In this paper, the new structure is proposed to solve this problem. The proposed structure has double p-floating layer inserted in n-drift layer. The p-floating layers improve the breakdown voltage compared to conventional IGBT without change of other electrical characteristics such as on-state voltage drop and threshold voltage. this is because the p-floating layers expand electric field distribution at blocking state. A electrical characteristic of proposed structure is analyzed by using simulators such as TSUPREM and MEDICI. As a result, on-state voltage drop and threshold voltage are same to a conventional TIGBT, but breakdown voltage is improved to 16%.