• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.14-15
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• 2009

Insulated Gate Bipolar Transistor(IGBTs) are widely used in power device industry. However, to improve the breakdown voltage, IGBTs are suffered from increasing on-state voltage drop due to structural design. In this paper, the new structure is proposed to solve this problem. The proposed structure has double p-floating layer inserted in n-drift layer. The p-floating layers improve the breakdown voltage compared to conventional IGBT without change of other electrical characteristics such as on-state voltage drop and threshold voltage. this is because the p-floating layers expand electric field distribution at blocking state. A electrical characteristic of proposed structure is analyzed by using simulators such as TSUPREM and MEDICI. As a result, on-state voltage drop and threshold voltage are same to a conventional TIGBT, but breakdown voltage is improved to 16%.

• Journal of IKEEE
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• v.11 no.4
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• pp.247-251
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• 2007

The recessed gate IGBT has a lower on-state voltage drop compared with the DMOS IGBT, because there is no JFET resistance. But because of the electric field concentration in the corner of the gate edge, the breakdown voltage decreases. This paper is about the new structure to effectively improve the Vce(sat) voltage without breakdown voltage drop in 1700V NPT type recessed gate IGBT with p floating shielding layer. For the fabrication of the recessed gate IGBT with p floating shielding layer, it is necessary to perform the only one implant step for the shielding layer. Analysis on the Breakdown voltage shows the improved values compared to the conventional recessed gate IGBT structures. The result shows the improvement on Breakdown voltage without worsening other characteristics of the device. The electrical characteristics were studied by MEDICI simulation results.

• Journal of Electrical Engineering and Technology
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• v.9 no.2
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• pp.686-694
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• 2014

A power semiconductor device, usually used as a switch or rectifier, is very significant in the modern power industry. The power semiconductor, in terms of its physical properties, requires a high breakdown voltage to turn off, a low on-state resistance to reduce static loss, and a fast switching speed to reduce dynamic loss. Among those parameters, the breakdown voltage and on-state resistance rely on the doping concentration of the drift region in the power semiconductor, this effect can be more important for a higher voltage device. Although the low doping concentration in the drift region increases the breakdown voltage, the on-state resistance that is increased along with it makes the static loss characteristic deteriorate. On the other hand, although the high doping concentration in the drift region reduces on-state resistance, the breakdown voltage is decreased, which limits the scope of its applications. This addresses the fact that breakdown voltage and on-state resistance are in a trade-off relationship with a parameter of the doping concentration in the drift region. Such a trade-off relationship is a hindrance to the development of power semiconductor devices that have idealistic characteristics. In this study, a novel structure is proposed for the Insulated Gate Bipolar Transistor (IGBT) device that uses conductivity modulation, which makes it possible to increase the breakdown voltage without changing the on-state resistance through use of a P-floating layer. More specifically in the proposed IGBT structure, a P-floating layer was inserted into the drift region, which results in an alleviation of the trade-off relationship between the on-state resistance and the breakdown voltage. The increase of breakdown voltage in the proposed IGBT structure has been analyzed both theoretically and through simulations, and it is verified through measurement of actual samples.

• Magazine of the Korean Society of Agricultural Engineers
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• v.29 no.2
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• pp.23-29
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• 1987

This study was fulfilled by the floating lysimeter method at the experimental farm of Kon-Kuk University from August to November of 1986 to investigate the amount of evapotranspiration by the growing periods, evapotranspiration ratio, amount of watering per one time, days of intermission, soil moisture extraction pattern and crop coefficient of the Chinese cabbage cultivated in the sandy loam soil at the watering point of pF2.O. The results obtained are summarized as follows: 1.The total evapotranspiration during the growing period was 267.2mm, which was 3. 99mm by daily average, and the maximum evapotranspiration showed in the mid ten days of September with the value of 5.81mm I day. 2.The evapotranspiration ratio by the growing stages increased from the last ten days of September and showed maximum in the beginning of October, and the average evapotranspiration ratio was 1.4. 3.The days of watering intermission at the watering point of pF2.O was 2.4 days, and the average yield per plant was 3,228 g. 4. The soil moisture extraction pattern in the initial stage was 78.9 % in the 1st and 2nd soil layer and 21.1 % in the 3rd and 4th layer, and the mid-season stage, the moisture extraction proportion of the under layer accounted for 38.8 % which showed that the root elongated to the lowest soil layer. 5.The average crop coefficient(Kc) of the tested crop during the growing period was 0.67 by Penman equation and 2.36 by Pan Evaporation equation, which showed high difference by the calculation methods, and the changes of crop coefficient by the growing stages by Penman equation was favorable than those calculated by other met-hods.

• Journal of the Korean Vacuum Society
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• v.21 no.6
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• pp.354-361
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• 2012

The organic memory device was made by the plasma polymerization method which was not the dry process but the wet process. The memory device consist of the styrene and MMA monomer as the insulating layer, MMA monomer as the tunneling layer and Au thin film as the memory layer which was fabricated by thermal evaporation method. The I-V characteristics of fabricated memory device got the hysteresis voltage of 27 V at 40/-40 V double sweep measuring conditions. At this time, the optimized structure was 7 nm of Au thin film as floating gate, 400 nm of styrene thin film as insulating layer and 30 nm of MMA thin film as tunneling layer. Therefore we got the charge trapping characteristics by the hysteresis voltage. From the paper, styrene indicated a good charge trapping characteristics better than MMA. In the future, we expect to make devices by using styrene thin film rather than Au thin film.

• Journal of Electrical Engineering and Technology
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• v.13 no.6
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• pp.2434-2440
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• 2018

A new type of piezoelectric micromachined ultrasonic transducer (pMUT) with high resonant frequency was developed by using a thin lead zirconate titanate (PZT) as an insulation layer on a floating $10{\mu}m$ silicon membrane. The PZT insulation layer facilitated acoustic impedance matching at active pMUT, leading to a high performance in the acoustic conversion property compared with the transducer using $SiO_2$ insulation layer. The fabricated ultrasonic devices were wirelessly measured by connecting two identical acoustic transducers to two separate ports in a single network analyzer simultaneously. The acoustic wave emitted from a transducer induced a $3.16{\mu}W$ on the other side of the transducer at a distance of 2 cm. The transducer performances in terms of device diameters, PZT thickness, annealings, and different DC polings, etc. were investigated. COMSOL simulation was also performed to predict the device performances prior to fabrication. Based on the COMSOL simulation, the device was fabricated and the results were compared.

• Asian-Australasian Journal of Animal Sciences
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• v.13 no.11
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• pp.1593-1597
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• 2000

In the quiescent state, cattle-manure slurry stratifies into three discernible layers, namely a floating scum layer, a bottom sludge layer and a watery middle layer. The proportions of top (scum), middle and bottom (sludge) layers were approximately 20, 60 and 20% respectively of the volume of the whole slurry. Particulate matter from the different stratified layers was characterised for particle size distribution and cellulose, hemicellulose and lignin composition. Total solids concentrations of top, middle and bottom layers were 12.7, 2.8 and 7.4% respectively. Larger particles were found in the top layer compared with the bottom. The top layer contained the highest amounts of Neutral Detergent Fibre (NDF), Acid Detergent Fibre (ADF), cellulose and hemicellulose, but the lowest amount of Total Kjeldahl Nitrogen (TKN). The bottom layer contained the highest amounts of Acid Detergent Lignin (ADL) and TKN. With increase in particle size, there were increases in NDF, ADF, cellulose and hemicellulose, accompanied by decreases in ADL and TKN. Biochemical methane potential of the three layers was also measured. The top layer was found to produce the most methane with the middle layer producing the least. Biomethanation rate from the top layer was also the highest. Differences in biomethanation rates and biochemical methane potential were attributed to differences in chemical composition of the particulate matter. About 48%, 23% and 30% of the total chemical oxygen demand (COD) in the top, middle and bottom layers respectively of the slurry was found to be degradable.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.464-464
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• 2013

그래핀 옥사이드(Graphene Oxide)는 그래핀과 마찬가지로 많은 분야로의 응용 가능성을 보이는 소자중 하나로 각광받고 있다. 그래핀 옥사이드가 가지는 유전체 특징은 전하 트랩층(charge trap layer)으로 사용을 가능하게 하고 또한 물에 녹는 수용성 특징은 스핀코터(spin coator)를 이용한 간단한 도포과정을 통하여 저비용으로 간단하게 소자를 제작 가능하게 한다. 이 연구에서 우리는 금속-절연체-반도체 구조를 가지는 메모리 소자를 제작하여 0.4 mg/ml의 농도로 DI에 용해된 그래핀 옥사이드가 플로팅게이트(floating gate)로써 사용되었을 때의 특성을 알아보기 위해 Boonton 720를 사용하여 C-V (hysteresis) 커브와 C-T(Capacitance-Time)를 측정하여 그래핀 옥사이드의 유무에 따른 메모리 윈도우 폭의 증가 및 저장된 정보가 손실되지 않고 얼마나 길게 유지 되는지를 살펴봄으로 플로팅게이트로써 그래핀 옥사이드의 특성을 살펴보았다. 먼저 터널링층으로 쓰이는 SiO2가 5 nm 증착된 P타입 Si기판위에 플로팅게이트로 쓰이는 그래핀 옥사이드층을 쉽게 쌓기 위하여 APTES 자기조립 단분자막 코팅을 한 후 그래핀 옥사이드를 3,000 rpm으로 40초간 스핀코팅을 하였다. 그 후 블로킹층으로 쓰이는 400 nm 두께의 폴리비닐페놀(PVP)를 3,000 rpm으로 40초간 스핀코팅을 하고 $130^{\circ}C$에서 열처리를 하였으며 $10^{-5}$ Torr의 압력에서 진공 열증착으로 알루미늄 게이트 전극을 증착했다.

• Environmental Engineering Research
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• v.15 no.1
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• pp.3-7
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• 2010

To better understand the ecology of tetrade forming organisms (TFOs) floating in a large amount of dairy wastewater treatment plant (WWTP) effluent (sequencing batch reactor [SBR]) during the inefficient phosphorus (P) removal process of an enhanced biological P removal system, the TFOs from the effluent of a full scale WWTP were separated and attempts made to culture the TFOs in presence/absence of oxygen. The intact TFOs only grew aerobically in the form of unicellular short-rods. Furthermore, to identify the intact TFOs and unicellular short-rods the DNAs of both were extracted, analyzed using their denaturing gradient gel electrophoresis (DGGE)-profiles and then sequenced. The TFOs and unicellular short-rods exhibited the same banding pattern in their DGGE-profiles, and those sequencing data resulted in their identification as Acinetobacter sp. The intact TFOs appeared in clumps and packages of tetrade cells, and were identified as Acinetobacter sp., which are known as strict aerobes and efficient P-removers. The thick layer of extracellular polymeric substance surrounding Acinetobacter sp. may inhibit phosphate uptake, and the cell morphology of TFOs might subsequently be connected with their survival strategy under the anaerobic regime of the SBR system.

• Journal of Radiation Protection and Research
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• v.28 no.2
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• pp.87-95
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• 2003

The fabrication process and the structure of PIN semiconductor detectors have been designed optimally by simulation for doping concentration and width of p+ layer, impurities re-contribution due to annealing and the current distribution due to guard ring at the sliced edges. The characteristics to radiation response has been also simulated in terms of Monte Carlo Method. The device has been fabricated on n type, $400\;{\Omega}cm$, orientation <100>, Floating-Zone silicon wafer using the simulation results. The leakage current density of $0.7nA/cm^2/100{\mu}m$ is achieved by this process. The good linearity of radiation response to Cs-137 was kept within the exposure ranges between 5 mR/h and 25 R/h. This proposed process could be applied for fabricating a PIN semiconductor detector for measuring individual dose.