한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)

한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
권호 표지

제조 조건에 따른 습도센서용 질화탄소막의 정전용량-전압 특성

Capacitance-Voltage Characteristics of Carbon Nitride Films for Humidity Sensors According to Deposition Condition

  • Kim, Sung-Yub (Department of Electronic Engineering, Kyungnam University) ;
  • Lee, Ji-Gong (Department of Electronic Engineering, Kyungnam University) ;
  • Lee, Sung-Pil (Department of Electronic Engineering, Kyungnam University)
  • 발행 : 2006.05.19
PDF 다운로드
⟨ 이전 논문 다음 논문 ⟩

초록

Carbon nitride ($CN_X$) films were prepared by reactive RF magnetron sputtering system at various deposition conditions and the C-V characteristics of MIS(metal - insulator - semiconductor) capacitors that have the structures of Al/$CN_x$/p-Si/Al and Al/$CN_x$/$Si_3N_4$/p-Si/Al were investigated. The resistivity of carbon nitride was above $2.40{\times}10^8{\Omega}{\cdot}cm$ at room temperature. The C-V plot showed a typical capacitance-voltage characteristics of semiconductor insulating layers, while it showed hysterisis due to interface charges. Amorphous carbon nitride (a-$CN_x$) films, that have relatively high resistivity and low dielectric constant could be useful as interlayer insulator materials of VLSI(very large-scale integration) and ULSI(ultra large-scale integration).

키워드