• The Transactions of the Korean Institute of Electrical Engineers P
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• v.52 no.3
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• pp.107-112
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• 2003

Amorphous carbon nitride thin films have been deposited on silicon (100) by reactive magnetron sputtering method. The basic depositon parameters varied were the r.f. power(up to 250 W), the deposition pressure in the reactor(up to 100 mtorr) and Ar:$N_2$ gas ratio. FT-IR and X-ray photoelectron spectra showed the presence of different carbon-nitrogen bonds in the films. The surface topography of the films was studied by scanning electron microscopy(SEM) and atomic force microscopy(AFM).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.208-211
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• 2003

The dielectric carbon nitride thin films were deposited onto Si(100) using a pulsed laser ablation of pure graphite target combined with a high voltage discharge plasma in nitrogen gas atmosphere. We can be calculated dielectric constant, ${\varepsilon}_s$, with a capacitance Sobering bridge method. We reported to investigate the influence of the laser ablation of graphite target and DC high voltage source for the plasma. The properties of the deposited carbon nitride thin films were influenced by the high voltage source during the film growth. Deposition rate of carbon nitride films were found to increase drastically with the increase of high voltage source. Infrared absorption clearly shows the existence of C=N bonds and $C{\equiv}N$ bonds. The carbon nitride thin films were observed crystalline phase, as confirmed by x-ray diffraction data.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.7
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• pp.641-646
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• 2003

The dielectric carbon nitride thin films were deposited onto Si(100) substrate using a pulsed laser ablation of pure graphite target combined with a high voltage discharge plasma in the presence of a N$_2$ reactive gas. We calculated dielectric constant, $\varepsilon$$\_$s/, with a capacitance Schering bridge method. We investigated the influence of the laser ablation of graphite target and DC high voltage source for the plasma. The properties of the deposited carbon nitride thin films were influenced by the high voltage source during the film growth. Deposition rate of carbon nitride films were increased drastically with the increase of high voltage source. Infrared absorption clearly shows the existence of C=N bonds and C=N bonds. The carbon nitride thin films were observed crystalline phase confirmed by x-ray diffraction data.

• Journal of the Korean institute of surface engineering
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• v.29 no.5
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• pp.363-370
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• 1996

Carbon nitride is one of the new carbon materials which show interesting properties. After the theoretical calculation by LIu and Cohen, many researchers are trying to prepare $\beta$-$C_3N_4$ which may be harder than diamond. Many carbon nitride films synthesized till now by various methods are amorphous and the N/C ratios in the films are usually below 0.5. First we review shortly the synthesis of carbon nitride thin films by plasma, ion and laser processing. Second we report on the preparation of amorphous carbon nitride thin films by shielded arc ion plating and the structural and mechanical properties of the films.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.12
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• pp.1103-1109
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• 2003

Crystalline carbon nitride films have been deposited by RF reactive magnetron sputtering system with negative DC bias. The carbon nitride films deposited on various substrates showed ${\alpha}$- C$_3$N$_4$,${\beta}$-C$_3$N$_4$ and lonsdaleite structures through XRD and FTIR We can find the grain growth of hexagonal structure from SEMI photographs, which is coincident with the theoretical carbon nitride unit cell. When nitrogen gas ratio is 70 % and RF power is 200 W, the growth rate of carbon nitride film on quartz substrate is about 2.1 $\mu\textrm{m}$/hr.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.34 no.1
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• pp.33-38
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• 2021

Using facing target magnetron sputtering (FTMS) with a graphite target source, carbon nitride thin films were deposited on silicon and glass substrates at different substrate temperatures to confirm the tribological, electrical, and structural properties of thin films. The substrate temperatures were room temperature, 150℃, and 300℃. The tribology and electrical properties of the carbon nitride thin films were measured as the substrate temperature increased, and a study on the relation between these results and structural properties was conducted. The results show that the increase in the substrate temperature during the fabrication of the carbon nitride thin films increased the hardness and elastic modulus values, the critical load value was increased, and the residual stress value was reduced. Moreover, the increase in the substrate temperature during thin-film deposition was attributed to the improvement in the electrical properties of carbon nitride thin film.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.5
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• pp.436-442
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• 2007

Physical properties and impedance-humidity characteristics of carbon nitride films were investigated for micro-humidity-sensors. Carbon nitride films were deposited in low temperature and low power for application of semiconductor fabrication process, and empirical equation was proposed for thickness evaluation. Deposited films had an uniform and compact surface comparing with previously reported results, which was expected a good candidate for humidity sensing materials. Carbon nitride humidity sensors based on Si substrate revealed good humidity-impedance characteristics with a wide range of relative humidity and showed low hysteresis.

• Journal of the Korean institute of surface engineering
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• v.29 no.5
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• pp.498-504
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• 1996

The synthesis of carbon nitride thin films with high nitrgen concentration was accomplished by reactive supttering at relatively high working pressure. In conventional reactive sputter-deposition of carbon nitride films, working pressure was 0.3-5Pa and the ratio of nitrogen to carbon(N/C ratio) in the films was less than 0.5. In this study, amorphous carbon nitride films with the N/C ratio $\tickapprox$ 1.0 were prepared on Si(100). substrates at higher pressure, 20-60 Pa. Structural analyses with Fourier transform infrared spectroscopy and X-ray photoelectron spectroscopy revealed that the films prepared consisted of triazine-like plain network.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.247-248
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• 2006

Carbon nitride films were evaluated that they had many advantages for miniature micro-humidity-sensors using the standard CMOS technology humidity sensing properties and CV characteristics of the carbon nitride films have been investigated for fabricating one chip HUSFET(Humidity Sensitive Field Effect Transistor) humidity sensors Carbon nitride films were deposited on silicon substrate with meshed electrodes by reactive RF magnetron sputtering system. The capacitor-type humidity sensor revealed good humidity-impedance characteristics with a wide range of relative humidity changes, decreasing $254k{\Omega}$ to $16k{\Omega}$ according to increase of relative humidity between 5% ~ 95% and the films were very stable on the Si wafer. These results reveal that $CN_x$ thin films can be used for Si based or HUSFET structure one chip micro-humidity sensors.

• Transactions on Electrical and Electronic Materials
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• v.7 no.5
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• pp.257-261
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• 2006

Nano-structured carbon nitride $(CN_x)$ films were prepared by reactive RF magnetron sputtering with a DC bias at various deposition conditions, and the physical and electrical properties were investigated. FTIR spectrum indicated an ${alpha}C_3N_4$ peak in the films. The carbon nitride film deposited on Si substrate had a nano-structured surface morphology. The grain size was about 20 nm and the deposition rate was $1.7{\mu}m/hr$. When the $N_2/Ar$ ratio was 3/7, the level of nitrogen incorporation was 34.3 at%. The film had a low dielectric constant. The metal-insulator-semiconductor (MIS) capacitors that the carbon nitride was deposited as insulators, exhibited a typical C-V characteristics.