대한전자공학회:학술대회논문집 (Proceedings of the IEEK Conference)
- 대한전자공학회 1998년도 하계종합학술대회논문집
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- Pages.871-874
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- 1998
실리콘기판 효과를 고려한 전송선 파라미터 추출 및 신호 천이
Parameter extraction and signal transient of IC interconnects on silicon substrate
초록
A new transmission line parameter extraction method of iC interconnects on silicon substrate is presented. To extract the acurate parameters, the silicon substrate effects were taken into account. Since the electromagnetic fields under the silicon substrate are propagated with slow wave mode, effective dielectric constant and different ground plane with the multi-layer dielectric structures were employed for inductance and capacitance matrix determination. Then accurate signal transients simulation were performed with HSPICE by using the parameters. It was shown that the simulation resutls has an excellent agreement with TDR/TDT measurements.
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