Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)

The Korean Institute of Electrical Engineers (대한전기학회)
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Effect of RTA on the interfacial Properties of Top Electrodes on $(Ba_{0.5}Sr_{0.5})TiO_3$

$(Ba_{0.5}Sr_{0.5})TiO_3$ 박막의 상부전극 RTA에 따른 계면 특성 변화

  • Jeon, Jang-Bae (Department of Electronic Materials Engineering, Wonkwang University) ;
  • Kim, Dyeok-Kyu (Department of Electronic Materials Engineering, Wonkwang University) ;
  • So, Soon-Jin (Department of Electronic Materials Engineering, Wonkwang University) ;
  • Park, Choon-Bae (Department of Electronic Materials Engineering, Wonkwang University)
  • 전장배 (원광대학교 전자재료공학과) ;
  • 김덕규 (원광대학교 전자재료공학과) ;
  • 소순진 (원광대학교 전자재료공학과) ;
  • 박춘배 (원광대학교 전자재료공학과)
  • Published : 1998.11.28
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Abstract

In this paper, we described the effect of rapid thermal annealing on the electrical properties of interfacial layer between various top electrodes and $(Ba_{0.5}Sr_{0.5})TiO_3$ thin films. BST thin films were fabricated on Pt/TiN/$SiO_2$/Si substrate by RF magnetron sputtering technique. AI, Ag, and Cu films for the formation of top electrode were deposited on BST thin films by thermal evaporator. Top electrodes/BST/Pt capacitor annealed with rapid thermal annealing at various temperature. In $(Ba_{0.5}Sr_{0.5})TiO_3$ thin films with Cu top electrode annealed at $500^{\circ}C$, the dielectric constant was measured to the value of 366 at 1.2 [kHz] and the leakage current was obtained to the value of $5.85{\times}10^{-7}\;[A/cm^2}$ at the forward bias of 2 [V].

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