Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)

The Korean Institute of Electrical Engineers (대한전기학회)
권호 표지

The Study of Fluoride Film Properties for TFT gate insulator application

박막트랜지스터 게이트 절연막 응용을 위한 불화막 특성연구

  • Kim, Do-Young (School of Electricai and Computer Engineering, Sungkyunkwan Univ.) ;
  • Choi, Suk-Won (School of Electricai and Computer Engineering, Sungkyunkwan Univ.) ;
  • Yi, Jun-Sin (School of Electricai and Computer Engineering, Sungkyunkwan Univ.)
  • 김도영 (성균관대학교 전기전자 및 컴퓨터공학부) ;
  • 최석원 (성균관대학교 전기전자 및 컴퓨터공학부) ;
  • 이준신 (성균관대학교 전기전자 및 컴퓨터공학부)
  • Published : 1998.11.28
Download PDF
⟨ Previous Next ⟩

Abstract

Gate insulators using various fluoride films were investigated for thin film transistor applications. Conventional oxide containing materials exhibited high interface states, high $D_{it}$ gives an increased threshold voltage and poor stability of TFT. To improve TFT performances, we must reduce interface trap charge density between Si and gate insulator. In this paper, we investigated gate insulators such as such as $CaF_2$, $SrF_2$, $MgF_2$ and $BaF_2$. These materials exhibited an improvement in lattice mismatch, difference in thermal expansion coefficient, and electrical stability MIM and MIS devices were employed for an electrical characterization and structural property examination. Among the various fluoride materials, $CaF_2$ film showed an excellent lattice mismatch of 0.737%, breakdown electric field higher than 1.7MV/cm and leakage current density of $10^{-6}A/cm^2$. This paper probes a possibility of new gate insulator material for TFT application.

Keywords