• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.11-12
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• 2005

2 차원 MEDICI 시뮬레이터를 이용하여 CMOS 회로의 전기적 특성을 조사하였다. CMOS 인버터 회로는 LDMOSFET를 이용하였는데, LDMOSFET에서 전류 및 스위칭 특성에 많은 영향을 주는 곳은 채널이라고 생각되는데, 채널에서의 불순물 농도 변화에 의한 CMOS 회로의 voltage transfer특성, low input voltage($V_{IL}$), high input voltage($V_{IH}$)등을 조사하였다. LDMOSFET에서 N 채널의 농도는 $V_{IL}$에, P 채널의 농도는 $V_{IH}$에 많은 영향을 주었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.395-398
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• 1999

In ac PDP(plasma Display Panel), the discharge characteristics is very important to display clear images. In this paper, we have studied the measurement of voltage transfer curves which show the discharge characteristics in AC PDP. The change of the effective wall capacitance during a discharge is also studied. These depend on lateral spreading of charge distribution and the strength of the discharge. As a parameter of the frequency, we observed the effects of the frequency in voltage transfer curves and in effective wall capacitance changes. As frequency increases, minimum sustain voltage and firing voltage decrease. In upper region of gap voltage the chance of the effective wall capacitance is independent of frequency.

• Journal of the Korean Institute of Telematics and Electronics B
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• v.33B no.10
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• pp.148-156
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• 1996

Increasing the switching frquency is essential to achieve the high density of switched mode power supplies, but this leads to the increase of switching losses. A number of new soft switching converters have been presented ot reduce switching losses, but most of them may have some demerits, such as the increase of voltage/current stresses and high conduction losses. To overcome these problems, the ZVT-PWM converter has recently been presented. in this paper, the operation characteristics of the ZVT-PWM boost converter is analyzed, and the steady-states (DC) and small-signal model of this converter are derived and analyzed, and then the transfer functions of this converter are derived. The transfer functions of ZVT-PWM boost converter are similar to those of the conventional PWM boost converter, but the transfer characteristics are affecsted by te duty ratio and the switching frequency.

• Proceedings of the KSME Conference
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• 2003.11a
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• pp.1530-1535
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• 2003

The automatic load transfer switch (ALTS) typically automatically transfers electrical loads from a normal electrical power source to an emergency electrical power source upon reduction or loss of normal power source voltage. It can also automatically re-transfer the load to the normal power source when the normal voltage has been restored within acceptable limits. The transfer operation of ALTS is accomplished by a spring-driven linkage mechanism. In this paper we build a dynamic model of driving mechanism for ALTS using ADAMS and checked the characteristics of the transfer operation. Finally we performed a detailed design of the driving mechanism through results of analysis and confirmed it to satisfy design requirements.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.59 no.5
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• pp.939-944
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• 2010

A high voltage air-cored helical strip/wire type pulse transformer has been fabricated for charging of a high voltage pulse forming line. As a primary coil, copper strip of 25mm width was wound helically around a MC nylon cylinder. For a secondary coil, copper enameled wire of 1mm diameter was wound around conical cylinder in order to provide insulation between two windings. The coupling coefficient of 0.53 was obtained when two coils were combined coaxially in the insulation oil filled chamber. Voltage gain and energy transfer efficiency were investigated by varying the parameters of primary and secondary circuit. Test results shows that the voltage gain increases up to 17 with increasing the primary capacitance up to 200nF. And highest energy transfer efficiency of 44% was obtained when the dual resonant operation condition was nearly satisfied. The pulse transformer developed in this study can be used for charging the middle conductor of a Blumlein pulse forming line.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.662_663
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• 2009

Motor bus transfer involves the process of transferring a bus that has several critical motors to an alternate source of power when the main normal power source feeding them is interrupted. Bus transfer is a time-critical application in which the transfer progress depends on various parameters such as the type of motor, load on the motor at the time of transfer, inertia of the motor, and the combined open-circuit time constant of various motors present on the bus at the time of transfer. This paper present the result of modeling and simulation of nuclear power motor bus using ETAP(Electrical Transient Analyzing Program) program for motor and motor bus residual voltage decay characteristics.

• Proceedings of the KIEE Conference
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• 1987.11a
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• pp.405-407
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• 1987

We calculated the discharge resistance, which is determined by plasma dynamics, of the discharge pumped excimer lasers with charge-transfer type. And investigated the characteristic of discharge voltage and current using EMIP.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.43 no.3
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• pp.381-387
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• 1994

In this paper, we found the improved SPICE heat transfer modeling of impulsed magnetizing fixture system and investigated temperature characteristics using the proposed model. As the detailed thermal characteristics of magnetizing fixture can be obtained, the efficient design of the impulsed magnetizing fixture which produce desired magnet will be possible using our heat transfer modeling. The knowledge of the temperature of the magnetizing fixture is very important of forecast the characteristics of the magnetizing fixture which produce desired magnet will be possible using our heat transfer modeling. The knowledge of the temperature of the magnetizing fixture is very important to forecast the characteristics of the magnetizing circuits under different conditions. The capacitor voltage was not raised above 810[V] to protect the magnetizing fixture from excessive heating. The purpose of this work is to compute the temperature increasing for different magnetizing conditions. The method uses multi-lumped model with equivalent thermal resistance and thermal capacitance. The reliable results are obtained by using iron core fixture (stator magnet of air cleaner DC motor) coupled to a low-voltage magnetizer(charging voltage : 1000[V], capacitor : 3825[$\mu$F]. The modeling and experimental results are in close aggrement.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.21 no.3
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• pp.62-68
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• 2007

The increasing use of power electronic equipment in distribution system has been the reason for the greater concern about a harmonic in recent time. Therefore, it is necessary for measurement and modelling to analyze a harmonic level and a transfer characteristic in distribution system. In this paper, the Point of Common Coupling (PCC) is selected to analyze harmonic characteristic of distribution system by IEC 61000-3-6. Harmonic voltage and orient were measured at the PCC of real distribution system Harmonic distribution, nonlinear load component and Total Harmonic Distortion(THD) were verified. The effective and accurate modelling of real distribution system were proved through a analysis of harmonic impedance, voltage and current under steady-state. Harmonic transfer characteristic were investigated through a analysis of harmonic voltage and current under harmonic current source.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.5
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• pp.1149-1154
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• 2014

To observe the tunneling phenomenon of oxide semiconductor transistor, The Indium-gallum-zinc-oxide thin film transistors deposited on SiOC as a gate insulator was prepared. The interface characteristics between a dielectric and channel were changed in according to the properties of SiOC dielectric materials. The transfer characteristics of a drain-source current ($I_{DS}$) and gate-source voltage ($V_{GS}$) showed the ambipolar or unipolar features according to the Schottky or Ohmic contacts. The ambipolar transfer characteristics was obtained at a transistor with Schottky contact in a range of ${\pm}1V$ bias voltage. However, the unipolar transfer characteristics was shown in a transistor with Ohmic contact by the electron trapping conduction. Moreover, it was improved the on/off switching in a ambipolar transistor by the tunneling phenomenon.