• Title/Summary/Keyword: voltage gating

검색결과 73건 처리시간 0.027초

IGBT를 이용한 전동차용 보조전원장치의 소음 저감에 관한 연구 (A Study on Noise Reduction for Auxiliary Power Supply of railway Vehicle Using IGBT)

  • 노애숙;김주범;배기훈;최종묵
    • 한국철도학회:학술대회논문집
    • /
    • 한국철도학회 1998년도 창립기념 춘계학술대회 논문집
    • /
    • pp.280-286
    • /
    • 1998
  • In recent years, the interest in noise increases gradually and the low noise level becomes one of the important performances in electrical equipment for railway vehicle. In the auxiliary power supply, most of the noise is made by the current ripple of alternating current reactor(ACL) which filters the output voltage. And this current ripple results from the voltage harmonics across the ACL. So the noise can be reduced by eliminating the voltage harmonics across the ACL. This paper shows harmonic eliminating technique which is making gating signals of upper and lower inverter have a phase difference in the 12-step inverter type auxiliary power supply. This technique was proved by testing on the developed 180KVA auxiliary power supply using IGBT.

  • PDF

간극결합채널의 아미노말단이 채널개폐에 미치는 영향 (Effect of Amino Terminus of Gap Junction Hemichannel on Its Channel Gating)

  • 임재길;천미색;정진;오승훈
    • 생명과학회지
    • /
    • 제16권1호
    • /
    • pp.37-43
    • /
    • 2006
  • 간극결합은 이웃하는 두 세포 사이에 형성된 이온채널이며 또한 단일세포막에서도 작용한다. 간극결합채널을 형성하는 아미노 말단의 10번째 아미노산 잔기 부위까지가 개폐극성(gating polarity)과 전류-전압관계에 영향을 미친다. 정상적인 Cx32 채널은 음성의 개폐극성과 내향적인 정류현상을 보이는 반면, 음성전하를 띠는 aspartate로 치환된 T8D 채널은 반대의 개폐극성과 직선의 정류현상을 보인다. 이러한 개폐극성과 정류현상의 변화가 전하 자체에 의한 것인지 아니면 아미노 말단의 구조적인 변화에 의한 것인지는 아직 불명확하다. 이러한 문제점을 규명하기 위하여 아미노 말단의 8번째 아미노산 잔기를 cysteine기로 치환시킨 T8C 채널을 만들어 substituted-cysteine accessibility method (SCAM) 방법으로 이 채널의 생물리학적 특성을 조사하고자 하였다. T8C 채널은 정상적인 Cx32 채널처럼 음성의 개폐극성과 내향적인 정류현상을 보였으며, cysteine기로 치환이 정상적인 Cx32 채널의 원래 구조를 변화시키지 않았다는 것을 의미한다. 본 연구에서는 이런 전하효과를 규명하기 위하여 음성 전하를 갖는 MTSES-와 양성전하를 갖는 MTSET+를 사용하였다. MTSES-를 처리하면 T8C 채널은 T8D 채널의 특성처럼 양성의 개폐극성과 직선의 정류현상을 보였다. 그러나 양성전하를 갖는 MTSET+를 처리한 경우에는 T8C 채널은 본래의 특성을 그대로 유지하였다. 작은 분자의 MTS에 의해서 부여된 전하가 아미노 말단의 구조적인 변화를 초래하지는 않을 것으로 생각된다. 따라서 반대의 전하를 띠는 MTSES-와 MTSET+가 서로 상반대는 영향을 미치는 것으로 보아 본 연구에서 관찰된 개폐극성과 전류-전압의 변화는 아미노말단의 구조적인 변화라기보다는 MTS에 의해서 부여된 전하 자체에 기인한다고 할 수 있다. 또한 MTS가 아미노말단의 8번째 부위에 접근하여 반응을 일으킬 수 있다는 결과는 간극결합채널의 아미노말단이 채널의 통로(pore)를 형성한다는 가설을 뒷받침한다.

Alteration of voltage-dependent activation by a single point mutation of a putative nucleotide-binding site in large-conductance $Ca^{2+}$-activated $K^+$ channel

  • Kim, Hyun-Ju;Lim, Hyun-Ho;Park, Chul-Seung
    • 한국생물물리학회:학술대회논문집
    • /
    • 한국생물물리학회 2003년도 정기총회 및 학술발표회
    • /
    • pp.44-44
    • /
    • 2003
  • $BK_{Ca}$ channels were suggested to contain one or more domains of the ‘regulator of K+ conductance’(RCK) in their cytosolic carboxyl termini (Jiang et al.2001). It was also shown that the RCK domain in mammalian $BK_{Ca}$ channels might sense the intracellular $Ca^{2+}$ with a low affinity (Xia et al. 2002). We aligned the amino acid sequence of the $\alpha$-subunit of rat $BK_{Ca}$ channels (rSlo) with known RCK domains and identified a second region exhibiting about 50% homology. This putative domain, RCK2, contains the characteristic amino acids conserved in other RCK domains. We wondered whether this second domain is involved in the domain-domain interaction and the gating response to intracellular $Ca^{2+}$ for rSlo channel, as revealed in the structure of RCK domain of E. coli channel (Jiang et al.2001). In order to examine the possibility, site-directed mutations were introduced into the RCK2 domain of rSlo channel and the mutant channels were expressed in Xenopus oocytes for functional studies. One of such mutation, G772D, in the putative nucleotide-binding domain resulted in the enhanced $Ca^{2+}$ sensitivity and the channel gating of rSlo channel. These results suggest that this region of $BK_{Ca}$ channels is important for the channel gating and may form an independent domain in the cytosolic region of $BK_{Ca}$ channels. In order to obtain the mechanistic insights of these results, G772 residue was randomly mutagenized by site-directed mutagenesis and total 17 different mutant channels were constructed. We are currently investigating these mutant channels by electrophysiological techniques.ical techniques.

  • PDF

Introduction to Industrial Applications of Low Power Design Methodologies

  • Kim, Hyung-Ock;Lee, Bong-Hyun;Choi, Jung-Yon;Won, Hyo-Sig;Choi, Kyu-Myung;Kim, Hyun-Woo;Lee, Seung-Chul;Hwang, Seung-Ho
    • JSTS:Journal of Semiconductor Technology and Science
    • /
    • 제9권4호
    • /
    • pp.240-248
    • /
    • 2009
  • Moore's law has driven silicon technology scale down aggressively, and it results in significant increase of leakage current on nano-meter scale CMOS. Especially, in mobile devices, leakage current has been one of designers' main concerns, and thus many studies have introduced low power methodologies. However, there are few studies to minimize implementation cost in the mixed use of the methodologies to the best of our knowledge. In this paper, we introduce industrial applications of low power design methodologies for the decrease of leakage current. We focus on the design cost reduction of power gating and reverse body bias when used together. Also, we present voltage scale as an alternative to reverse body bias. To sustain gate leakage current, we discuss the adoption of high-$\kappa$ metal gate, which cuts gate leakage current by a factor of 10 in 32 nm CMOS technology. A 45 nm mobile SoC is shown as the case study of the mixed use of low power methodologies.

Characterization of Electrical Properties and Gating Effect of Single Wall Carbon Nanotube Field Effect Transistor

  • Heo, Jin-Hee;Kim, Kyo-Hyeok;Chung, Il-Sub
    • Transactions on Electrical and Electronic Materials
    • /
    • 제9권4호
    • /
    • pp.169-172
    • /
    • 2008
  • We attempted to fabricate carbon nanotube field effect transistor (CNT-FET) using single walled carbon nanotube(SWNT) on the heavily doped Si substrate used as a bottom gate, source and drain electrode were fabricated bye-beam lithography on the 500 nm thick $SiO_2$ gate dielectric layer. We investigated electrical and physical properties of this CNT-FET using Scanning Probe Microscope(SPM) and conventional method based on tungsten probe tip technique. The gate length of CNT-FET was 600 nm and the diameter of identified SWNT was about 4 nm. We could observed gating effect and typical p-MOS property from the obtained $V_G-I_{DS}$ curve. The threshold voltage of CNT-FET is about -4.6V and transconductance is 47 nS. In the physical aspect, we could identified SWNT with phase mode of SPM which detecting phase shift by force gradient between cantilever tip and sample surface.

Short-term activation of synaptic transmission by acute KCl application significantly reduces somatic A-type K+ current

  • Song, Jung-Yop;Kim, Hye-Ji;Jung, Sung-Cherl;Kang, Moon-Seok
    • Journal of Medicine and Life Science
    • /
    • 제15권2호
    • /
    • pp.62-66
    • /
    • 2018
  • A-type $K^+$ ($I_A$) channels are transiently activated in the suprathreshold membrane potential and then rapidly inactivated. These channels play roles to control the neuronal excitability in pyramidal neurons in hippocampi. We here electrophysiologically tested if regulatory functions of $I_A$ channels might be targeted by acute activation of glutamatergic synaptic transmission in cultured hippocampal neurons(DIV 6~8). The application of high KCl in recording solutions(10 mM, 2 min) to increase presynaptic glutamate release, significantly reduced the peak of somatic $I_A$ without changes of gating kinetics. This indicates that neuronal excitation induced by the enhancement of synaptic transmission may process with distinctive signaling cascades to affect voltage-dependent ion channels in hippocampal neurons. Therefore, it is possible that short-lasting enhancement of synaptic transmission is functionally restricted in local synapses without effects on intracellular signaling cascades affecting a whole neuron, efficiently and rapidly enhancing synaptic functions in hippocampal network.

Intracellular calcium-dependent regulation of the sperm-specific calcium-activated potassium channel, hSlo3, by the BKCa activator LDD175

  • Wijerathne, Tharaka Darshana;Kim, Jihyun;Yang, Dongki;Lee, Kyu Pil
    • The Korean Journal of Physiology and Pharmacology
    • /
    • 제21권2호
    • /
    • pp.241-249
    • /
    • 2017
  • Plasma membrane hyperpolarization associated with activation of $Ca^{2+}$-activated $K^+$ channels plays an important role in sperm capacitation during fertilization. Although Slo3 (slowpoke homologue 3), together with the auxiliary ${\gamma}^2$-subunit, LRRC52 (leucine-rich-repeat-containing 52), is known to mediate the pH-sensitive, sperm-specific $K^+$ current KSper in mice, the molecular identity of this channel in human sperm remains controversial. In this study, we tested the classical $BK_{Ca}$ activators, NS1619 and LDD175, on human Slo3, heterologously expressed in HEK293 cells together with its functional interacting ${\gamma}^2$ subunit, hLRRC52. As previously reported, Slo3 $K^+$ current was unaffected by iberiotoxin or 4-aminopyridine, but was inhibited by ~50% by 20 mM TEA. Extracellular alkalinization potentiated hSlo3 $K^+$ current, and internal alkalinization and $Ca^{2+}$ elevation induced a leftward shift its activation voltage. NS1619, which acts intracellularly to modulate hSlo1 gating, attenuated hSlo3 $K^+$ currents, whereas LDD175 increased this current and induced membrane potential hyperpolarization. LDD175-induced potentiation was not associated with a change in the half-activation voltage at different intracellular pHs (pH 7.3 and pH 8.0) in the absence of intracellular $Ca^{2+}$. In contrast, elevation of intracellular $Ca^{2+}$ dramatically enhanced the LDD175-induced leftward shift in the half-activation potential of hSlo3. Therefore, the mechanism of action does not involve pH-dependent modulation of hSlo3 gating; instead, LDD175 may modulate $Ca^{2+}$-dependent activation of hSlo3. Thus, LDD175 potentially activates native KSper and may induce membrane hyperpolarization-associated hyperactivation in human sperm.

A Modified Switched-Diode Topology for Cascaded Multilevel Inverters

  • Karasani, Raghavendra Reddy;Borghate, Vijay B.;Meshram, Prafullachandra M.;Suryawanshi, H.M.
    • Journal of Power Electronics
    • /
    • 제16권5호
    • /
    • pp.1706-1715
    • /
    • 2016
  • In this paper, a single phase modified switched-diode topology for both symmetrical and asymmetrical cascaded multilevel inverters is presented. It consists of a Modified Switched-Diode Unit (MSDU) and a Twin Source Two Switch Unit (TSTSU) to produce distinct positive voltage levels according to the operating modes. An additional H-bridge synthesizes a voltage waveform, where the voltage levels of either polarity have less Total Harmonic Distortion (THD). Higher-level inverters can be built by cascading MSDUs. A comparative analysis is done with other topologies. The proposed topology results in reductions in the number of power switches, losses, installation area, voltage stress and converter cost. The Nearest Level Control (NLC) technique is employed to generate the gating signals for the power switches. To verify the performance of the proposed structure, simulation results are carried out by a PSIM under both steady state and dynamic conditions. Experimental results are presented to validate the simulation results.

Phase Angle Control in Resonant Inverters with Pulse Phase Modulation

  • Ye, Zhongming;Jain, Praveen;Sen, Paresh
    • Journal of Power Electronics
    • /
    • 제8권4호
    • /
    • pp.332-344
    • /
    • 2008
  • High frequency AC (HFAC) power distribution systems delivering power through a high frequency AC link with sinusoidal voltage have the advantages of simple structure and high efficiency. In a multiple module system, where multiple resonant inverters are paralleled to the high frequency AC bus through connection inductors, it is necessary for the output voltage phase angles of the inverters be controlled so that the circulating current among the inverters be minimized. However, the phase angle of the resonant inverters output voltage can not be controlled with conventional phase shift modulation or pulse width modulation. The phase angle is a function of both the phase of the gating signals and the impedance of the resonant tank. In this paper, we proposed a pulse phase modulation (PPM) concept for the resonant inverters, so that the phase angle of the output voltage can be regulated. The PPM can be used to minimize the circulating current between the resonant inverters. The mechanisms of the phase angle control and the PPM were explained. The small signal model of a PPM controlled half-bridge resonant inverter was analyzed. The concept was verified in a half bridge resonant inverter with a series-parallel resonant tank. An HFAC power distribution system with two resonant inverters connected in parallel to a 500kHz, 28V AC bus was presented to demonstrate the applicability of the concept in a high frequency power distribution system.

Implementation of Inverter Systems for DC Power Regeneration

  • Kim Kyung-Won;Yoon In-Sic;Seo Young-Min;Hong Soon-Chan;Yoon Duck-Yong
    • 전력전자학회:학술대회논문집
    • /
    • 전력전자학회 2001년도 Proceedings ICPE 01 2001 International Conference on Power Electronics
    • /
    • pp.126-131
    • /
    • 2001
  • This paper deals with implementation of inverter systems for DC power regeneration, which can regenerate the excessive DC power from DC bus line to AC supply in substations for traction systems. From the viewpoint of both power capacity and switching losses, a three-phase square-wave inverter system is adopted. To control the regenerated power, the magnitude and phase of fundamental output voltages should be appropriately controlled in spite of the variation of input DC voltage. Inverters are operated with modified a-conduction mode to fix the potential of each arm. The overall system consists of the line-to-line voltage and line current sensors, an actual power calculator using d-q transformation method, a complex power controller with PI control scheme, a gating signal generator for modified $\alpha-conduction\;mode\;with\;\delta\;and\;\alpha$, a DPLL for frequency followup, and power circuit.

  • PDF