• Journal of Life Science
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• v.14 no.5
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• pp.882-890
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• 2004

Gap junction is a membrane structure facilitating the direct transmission of several ions and small molecules between two cells. It is also called an 'intercellular channel' to distinguish it from other well-known cellular channels (e.g. sodium and potassium channels). Gap junction channels are not passive conduits, rather the ion channels modulated by several stimuli including pH, calcium ion, voltage, and a chemical modification (mainly known as phosphorylation). Among them, the effects of voltage on the gating of gap junction channels have been well studied. Gap junction channels are more sensitive to the transjunctional potential ($V_j$) between two cells rather than the membrane potential($V_m$) between inside and outside the cell. In this review, I will summarize the general properties of gap junction channel and discuss the gating mechanism for the gap channels.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1023_1024
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• 2009

In this paper, a novel 10kV, 50A, 50kHz pulsed power supply based on IGBT stacks is proposed. Proposed scheme consists of series connected 12 IGBT to generate maximum 10kV output pulse and 10kW full bridge phase-shifted zero voltage switching converter to charge DC capacitor voltage. Each IGBTs are sustain the 830V of capacitor voltage at turn off interval. By turn on the each IGBT for the same time it gives the path for the series connection of charged capacitor. From above turn on and off procedure, high voltage repetitive pulse is applied to the load. The synchronization of gating signal is important of series operation of IGBTs. For gating signal synchronization, specially designed gate power circuit using full bridge inverter and pulse transformer is developed to generate IGBT gating signal.

• JSTS:Journal of Semiconductor Technology and Science
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• v.9 no.1
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• pp.1-7
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• 2009

This paper describes design of high energy efficiency 32 bit parallel processor core using instruction-levels data gating and dynamic voltage scaling (DVS) techniques. We present instruction-levels data gating technique. We can control activation and switching activity of the function units in the proposed data technique. We present instruction-levels DVS technique without using DC-DC converter and voltage scheduler controlled by the operation system. We can control powers of the function units in the proposed DVS technique. The proposed instruction-levels DVS technique has the simple architecture than complicated DVS which is DC-DC converter and voltage scheduler controlled by the operation system and a hardware implementation is very easy. But, the energy efficiency of the proposed instruction-levels DVS technique having dual-power supply is similar to the complicated DVS which is DC-DC converter and voltage scheduler controlled by the operation system. We simulate the circuit simulation for running test program using Spectra. We selected reduced power supply to 0.667 times of the supplied power supply. The energy efficiency of the proposed 32 bit parallel processor core using instruction-levels data gating and DVS techniques can improve about 88.4% than that of the 32 bit parallel processor core without using those. The designed high energy efficiency 32 bit parallel processor core can utilize as the coprocessor processing massive data at high speed.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.49 no.8
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• pp.10-15
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• 2012

This letter proposes a low-leakage SRAM using power-gating and voltage-level control. The power-gating scheme significantly reduces leakage power by shutting off the power supply to blank memory cell blocks. The voltage-level control scheme saves leakage power by raising the ground line voltage of SRAM cells and word line decoders in data-stored memory cell blocks. A $4K{\times}8bit$ SRAM chip was fabricated using a 1.2V $0.13{\mu}m$ CMOS process. The leakage powers are $1.23{\sim}9.87{\mu}W$ and $1.23{\sim}3.01{\mu}W$ for 0~100% memory usage in active and sleep modes, respectively. During the sleep mode, the proposed SRAM consumes 12.5~30.5% leakage power compared to the conventional SRAM.

• Journal of Microbiology and Biotechnology
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• v.25 no.8
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• pp.1371-1379
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• 2015

The Ca_v1.2 Ca²⁺ channel is essential for cardiac and smooth muscle contractility and many physiological functions. We mutated single, double, and quadruple sites of the four potential Asn (N)-glycosylation sites in the rabbit Ca_v1.2 into Gln (Q) to explore the effects of Nglycosylation. When a single mutant (N124Q, N299Q, N1359Q, or N1410Q) or Ca_v1.2/WT was expressed in Xenopus oocytes, the biophysical properties of single mutants were not significantly different from Ca_v1.2/WT. In comparison, the double mutant N124,299Q showed a positive shift in voltage-dependent gating. Furthermore, the quadruple mutant (QM; N124,299,1359,1410Q) showed a positive shift in voltage-dependent gating as well as a reduction of current. We tagged EGFP to the QM, double mutants, and Ca_v1.2/WT to chase the mechanisms underlying the reduced currents of QM. The surface fluorescence intensity of QM was weaker than that of Ca_v1.2/WT, suggesting that the reduced current of QM arises from its lower surface expression than Ca_v1.2/WT. Tunicamycin treatment of oocytes expressing Ca_v1.2/WT mimicked the effects of the quadruple mutations. These findings suggest that Nglycosylation contributes to the surface expression and voltage-dependent gating of Ca_v1.2.

• Proceedings of the KIPE Conference
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• 2007.11a
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• pp.43-46
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• 2007

In this paper, a novel new pulse power generator based on IGBT stacks is proposed for pulse power application. Proposed scheme consists of series connected 9 power stages to generate maximum 60kV output pulse and one series resonant power inverter to charge DC capacitor voltage. Each power stages are configured as 8 series connected power cells and each power cell generates up to 850VDC pulse. Finally pulse output voltage is applied using total 72 series connected IGBTs. The synchronization of gating signal is important for series operation of IGBTs. For gating signal synchronization, full bridge inverter and pulse transformer generates on-off signals of IGBT gating and specially designed gate power circuit was used. Proposed scheme has lots of advantages such as long lifecyle, compact size, flat topped pulse forming, small weight, protection for arc, high efficiency and flexibility to generate various kinds of pulse output.

• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.904-905
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• 2008

In this paper, a novel 60kV, 300A, 3kHz pulsed power supply based on IGBT stacks is proposed. Proposed scheme consists of series connected 9 power stages to generate maximum 60kV output pulse and 15kW series resonant power inverter to charge DC capacitor voltage. Each power stages are configured as 8 series connected power cells and each power cell generates up to 830VDC, 300A pulses. Finally pulse output voltage is applied using total 72 series connected IGBTs. The synchronization of gating signal is important of series operation of IGBTs. For gating signal synchronization, full bridge inverter and pulse transformer generates on-off signals of IGBT gating and specially designed gate power circuit was used.

• Proceedings of the KIEE Conference
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• 2006.07b
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• pp.917-918
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• 2006

In this paper, a novel new pulse power generatorbased on IGBT stacks is proposed for pulse power application. Proposed scheme consists of series connected 9power stages to generate maximum 60kV output pulse and one series resonant power inverter to charge DC capacitor voltage. Each power stages are configured as 8 series connected power cells and each power cell generates up to 850VDC pulse. Finally pulse output voltage is applied using total 72 series connected IGBTs. The synchronization of gating signal is importantfor series operation of IGBTs. For gating signal synchronization, full bridge inverter and pulse transformer generates on-off signals of IGBT gating and specially designed gate power circuit was used.

• Animal cells and systems
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• v.11 no.2
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• pp.169-173
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• 2007

Hyperpolarization-activated nonselective cation channels (HCNs) play a pivotal role in producing rhythmic electrical activity in the heart and the nerve cells. In our previous experiments, voltage-dependent $Cd^{2+}$ access to one of the substituted cysteines in S6, T464C, supports the existence of an intracellular voltage-dependent activation gate. Direct binding of intracellular cAMP to HCN channels also modulates gating. Here we attempted to locate the cAMP-modulated structure that can modify the gating of HCN channels. SpHCN channels, a sea urchin homologue of the HCN family, became inactivated rapidly and intracellular cAMP removed this inactivation, resulting in about eight-fold increase of steady-state current level. T464C was probed with $Cd^{2+}$ applied to the intracellular side of the channel. We found that access of $Cd^{2+}$ to T464C was strongly gated by cAMP as well as voltage. Release of bound $Cd^{2+}$ by DMPS was also gated in a cAMP-dependent manner. Our results suggest the existence of an intracellular cAMP-modulated gate in the lower S6 region of spHCN channels.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.1
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• pp.88-99
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• 2007

In this paper, a novel new pulse power generator based on IGBT stacks is proposed for pulse power application. Because it can generate up to 60kV pulse output voltage without any step- up transformer or pulse forming network, it has advantages of fast rising time, easiness of pulse width variation and rectangular pulse shape. Proposed scheme consists of series connected 9 power stages to generate maximum 60kV output pulse and one series resonant power inverter to charge DC capacitor voltage. Each power stages are configured as 8 series connected power cells and each power cell generates up to 850VDC pulse. Finally pulse output voltage is applied using total 72 series connected IGBTs. To reduce component for gate power supply, a simple and robust gate drive circuit is proposed. For gating signal synchronization, full bridge invertor and pulse transformer generates on-off signals of IGBT gating with gate power simultaneously and it has very good characteristics of short circuit protection.