• The Transactions of The Korean Institute of Electrical Engineers
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• v.59 no.2
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• pp.328-332
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• 2010

The SLF(Short Line Fault) breaking capability test for high voltage class $SF_6$ GCB(Gas Circuit Breaker) was conducted. Simplified LC resonant circuit test facility was used for SLF breaking test. During test, Test current was measured by Rogwski coil and arc voltage was measured by voltage divider. Arc conductance was calculated by using these test results before 200ns at current zero. Critical arc conductance value at rated voltage 145kV class is about 2.3mS regardless of breaking current magnitude and arc conductance value at rated voltage 170kV class is about 2.6mS.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.05b
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• pp.46-49
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• 2005

This paper presents the electrical characteristics of metal oxide varistors for lightning surge arresters. ZnO varistors were fabricated with typical ceramic production methods and two types of varistors were also prepared to be compared. The nominal discharge current and line discharge class of those varistors are $10kA(8/20{\mu}s)$ and class 3, respectively. The diameter of varistors manufactured and prepared were in the range of 61.6~65.0mm and the thickness of those were in the range of 27~42.52mm. The reference and residual voltage were tested and reference and residual voltage per 1mm and the ratio of reference and residual voltage were calculated. The reference voltage per 1mm of varistors manufactured was about 175V/mm but that of A's and B's varistors was nearly 200V/mm. The residual voltage exhibited the same trends as the reference voltage, so the reference and residual voltage per 1mm of domestic varistors should be increased. According to the results of tests, it is thought that if the reference and residual voltage per 1mm were increased to 200V/mm and 330V/mm, domestic ZnO varistors would be possible to apply to the station class arresters in the near future.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.11 no.1
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• pp.83-88
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• 2007

The reliability characteristics of class-E RF power amplifier are studied, based on the degradation of MOSFET electrical characteristics. The class-E power amplifier operates as a switch mode operation to achieve high efficiency. This operation leads to high voltage stress when MOSFET switch is turned-off. The increase in threshold voltage and decrease in nobility caused by high voltage stress leads to a drop in the drain current. In the class-E power amplifier the effects caused by the degradation of MOSFET drain current is a drop of the power efficiency and output power. But the small inductor in the class-E load network allows the reliability to be improved. After $10^{7}\;sec$. the drain current decreases 46.3% and the PAE(Power Added Efficiency) decreases from 58% to 36% when the load inductor is 1mH. But when the load inductor is 1nH the drain current decreases 8.89% and the PAE decreases from 59% to 55%.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.26 no.6
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• pp.593-596
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• 2015

In this paper, we design a high efficiency class E power amplifier operating at low drain bias voltage for wireless power transfers. A 13.56 MHz power amplifier is designed at drain bias voltage of 12.5 V using Si MOSFET with the breakdown voltage of 40 V. High quality-factor solenoidal inductor is designed and fabricated for use in output matching circuit to improve output power and efficiency. Input matching circuit simply consists of resistor and inductor to reduce the circuit area and improve the stability. The fabricated power amplifier shows the measured output power of 38.6 dBm with the gain of 16.6 dB and power added efficiency of 89.3 % at 13.56 MHz.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.45 no.2
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• pp.199-215
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• 1996

A new Class-D series-loaded resonant inverter topology which can minimize the influences of the stray inductances is presented. In the conventional Class-D inverters, the stray inductances not only result in the overvoltage which gives the switches voltage stresses, but also in the high frequency resonant currents during turn-off transients. The new Class-D inverter is superior to the conventional Class-D inverters with respect to minimization of the problems caused by the stray inductances and is more suitable for high power and high frequency inverter systems such as induction heating. The validity of the new Class-D inverter is verified by simulation and experimental results.

• Journal of information and communication convergence engineering
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• v.6 no.2
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• pp.154-157
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• 2008

A class-E RF(Radio Frequency) power amplifier for wireless application is designed using standard CMOS technology. To drive the class-E power amplifier, a class-F RF power amplifier is used and the reliability characteristics are studied with a class-E load network. The reliability characteristic is improved when a finite-DC feed inductor is used instead of an RF choke with the load. After one year of operating, when the load is an RF choke the output current and voltage of the power amplifier decrease about 17% compared to initial values. But when the load is a finite DC-feed inductor the output current and voltage decrease 9.7%. The S-parameter such as input reflection coefficient(S11) and the forward transmission scattering parameter(S21) is simulated with the stress time. In a finite DC-feed inductor the characteristics of S-parameter are changed slightly compared to an RF-choke inductor. From the simulation results, the class-E power amplifier with a finite DC-feed inductor shows superior reliability characteristics compared to power amplifier using an RF choke.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.25 no.11
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• pp.98-102
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• 2011

This paper describes inverse E class frequency multiplier which is lower inductance and peak switching voltage than E class frequency multiplier. The frequency multiplier is designed to generate 5.8[GHz] frequency by doubling the input frequency 2.9[GHz]. The peak switching voltage of designed inverse E class frequency multiplier with 11[V] is lower 4[V] than that of E class frequency multiplier with 15[V]. The inverse E class frequency multiplier has a conversion gain 6[dB] at output power 21[dBm] and maximum 35[%] power efficiency.

• 전기의세계
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• v.20 no.4
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• pp.5-11
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• 1971

This is a study on the insulation methods of home appliances and wiring devices proper to the new electric distribution system, primary side is 22.9/13.2KV, 3 phase 4 wire multigrounding system and secondary side is 380/220V, 3 phase 4 wire common neutral system. 1800V is determined as the electrical insulation voltage of the functional insulation because the abnormal voltage rise of the neutral line is 1300V. In the case of the functional insulation faults, the following safety methods will be suggested to protect the accidental faults: (a) class I appliance (accessible metal part is earthed), (b) class II appliance (doublly insulated), (c) class III appliance (operates at low voltage source). The mechanisms of the wiring devices are not improved to guarantee for the harmful electric shock but also the electrical insulation voltage is rised to 2000V.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.04b
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• pp.179-182
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• 2004

ZnO varistor for transmission class arrester$({\Phi}65{\times}20mm)$ of 10kA(Class 3) grade was recently developed in korea and is tested for the properties by switching surge operating duty test to know the line discharge class and complex surge property in electric properties. To find out changing rate of residual voltage before and after lightning impulse residual voltage testing, the sample is cool to room temperature after finishing switching surge operating duty test, and the rate is good as 1.0~1.7%. The element had been considered as applicable ZnO varistor for electricity transmission from the test results of state conterl, switching surge operating duty, thermal stability and above test. But various test should be required for actual application because this is a part of the to be needed for application.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.15 no.5
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• pp.335-342
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• 2022

In this paper, a single-bit 3rd-order feedforward delta sigma modulator is proposed for audio applications. The proposed modulator is based on a class-C inverter for low voltage and power applications. For the high-precision requirement, the class-C inverter with regulated cascode structure increases its DC gain and acts as a low-voltage subthreshold amplifier. The proposed Class-C inverter-based modulator is designed and simulated in 180-nm CMOS process. With no performance loss and a low supply voltage compatibility, the proposed class-C inverter-based switched-capacitor modulator achieves high power efficiency. This design achieves an signal-to-noise-and-distortion ratio (SNDR) of 93.9 dB, an signal-to-noise ratio (SNR) of 108 dB, an spurious-free dynamic range (SFDR) of 102 dB, and a dynamic range (DR) of 102 dB at a signal bandwidth of 20 kHz and a sampling frequency of 4 MHz, while only using 280 μW of power consumption from a 0.8-V power supply.